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Localized thinning for strain concentration in suspended germanium membranes and optical method for precise thickness measurement / Vaccaro, Pablo Oscar (Institució Catalana de Recerca i Estudis Avançats) ; Alonso Carmona, Maria Isabel (Institut de Ciència de Materials de Barcelona) ; Garriga, Miquel (Institut de Ciència de Materials de Barcelona) ; Gutiérrez, Joffre (Institut de Ciència de Materials de Barcelona) ; Peró, Damià (Institut de Ciència de Materials de Barcelona) ; Wagner, Markus R.. (Institut Català de Nanociència i Nanotecnologia) ; Reparaz, Juan Sebastian (Institut Català de Nanociència i Nanotecnologia) ; Sotomayor Torres, Clivia M. (Institut Català de Nanociència i Nanotecnologia) ; Vidal, Xavier (Macquarie University. Department of Physics and Astronomy) ; Carter, E. A. (University Sydney. School of Chemistry and Sydney Analytical) ; Lay, P. A. (University Sydney. School of Chemistry and Sydney Analytical) ; Yoshimoto, M. (Kyoto Institute of Technology) ; Goñi, Alejandro R. (Institut de Ciència de Materials de Barcelona)
We deposited Ge layers on (001) Si substrates by molecular beam epitaxy and used them to fabricate suspended membranes with high uniaxial tensile strain. We demonstrate a CMOS-compatible fabrication strategy to increase strain concentration and to eliminate the Ge buffer layer near the Ge/Si hetero-interface deposited at low temperature. [...]
2018 - DOI (Digital Object Identifier)

10.1063/1.5050674
AIP advances, Vol. 8, issue 11 (November 2018) , art. 115131

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1	Però, Davide

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