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7 p, 853.2 KB Four-state ferroelectric spin-valve / Quindeau, Andy (Max Planck Institute of Microstructure Physics) ; Fina, Ignasi (University of Warwick. Department of Physics) ; Martí Rovirosa, Xavier (Institut Català de Nanociència i Nanotecnologia) ; Apachitei, Geanina (University of Warwick. Department of Physics) ; Ferrer, Pilar (Harwell Science and Innovation Campus. Diamond Light Source) ; Nicklin, Chris (Harwell Science and Innovation Campus. Diamond Light Source) ; Pippel, Eckhard (Max Planck Institute of Microstructure Physics) ; Hesse, Dietrich (Max Planck Institute of Microstructure Physics) ; Alexe, Marin (University of Warwick. Department of Physics)
Spin-valves had empowered the giant magnetoresistance (GMR) devices to have memory. The insertion of thin antiferromagnetic (AFM) films allowed two stable magnetic field-induced switchable resistance states persisting in remanence. [...]
2015 - 10.1038/srep09749
Scientific reports, Vol. 5 (May 2015) , art. 9749  
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