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1.
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7 p, 1.0 MB |
Revealing the improved stability of amorphous boron-nitride upon carbon doping
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Kaya, Onurcan (Institut Català de Nanociència i Nanotecnologia) ;
Colombo, Luigi (The University of Texas at Dallas. Department of Materials Science and Engineering) ;
Antidormi, Aleandro (Institut Català de Nanociència i Nanotecnologia) ;
Lanza, Mario (King Abdullah University of Science and Technology. Department of Material Science and Engineering) ;
Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
We report on a large improvement of the thermal stability and mechanical properties of amorphous boron-nitride upon carbon doping. By generating versatile force fields using first-principles and machine learning simulations, we investigate the structural properties of amorphous boron-nitride with varying contents of carbon (from a few percent to 40 at%). [...]
2022 -  10.1039/d2nh00520d
Nanoscale horizons, Vol. 8, Issue 3 (March 2022) , p. 361-367
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2.
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7 p, 1.1 MB |
Giant valley-polarized spin splittings in magnetized Janus Pt dichalcogenides
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Sattar, Shahid (Linnaeus University. Department of Physics and Electrical Engineering) ;
Larsson, J. Andreas (Luleå University of Technology. Department of Engineering Sciences and Mathematics) ;
Canali, C.M. (Linnaeus University. Department of Physics and Electrical Engineering) ;
Roche, Stephan (Institut Català de Nanociència i Nanotecnologia) ;
Garcia, José H. (Institut Català de Nanociència i Nanotecnologia)
We reveal giant proximity-induced magnetism and valley-polarization effects in Janus Pt dichalcogenides (such as SPtSe), when bound to the europium oxide (EuO) substrate. Using first-principles simulations, it is surprisingly found that the charge redistribution, resulting from proximity with EuO, leads to the formation of two K and K' valleys in the conduction bands. [...]
2022 - 10.1103/PhysRevB.105.L041402
Physical review B, Vol. 105, issue 4 (Jan. 2022) , art. A100
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3.
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39 p, 1.5 MB |
Two-dimensional materials prospects for non-volatile spintronic memories
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Yang, Hyunsoo (National University of Singapore. Department of Electrical and Computer Engineering) ;
Valenzuela, Sergio O. (Institut Català de Nanociència i Nanotecnologia) ;
Chshiev, Mairbek (SPINtronique et TEchnologie des Composants) ;
Couet, Sébastien (Imec) ;
Dieny, Bernard (SPINtronique et TEchnologie des Composants) ;
Dlubak, Bruno (Unité Mixte de Physique. CNRS. Thales. Université Paris-Saclay) ;
Fert, Albert (Université Paris-Saclay. Unité Mixte de Physique) ;
Garello, Kevin (SPINtronique et TEchnologie des Composants) ;
Jamet, Matthieu (SPINtronique et TEchnologie des Composants) ;
Jeong, Dae-Eun (Samsung Electronics Co.) ;
Lee, Kangho (Samsung Electronics Co.) ;
Lee, Taeyoung (GLOBALFOUNDRIES Singapore Pte. Ltd.) ;
Martin, Marie-Blandine (Université Paris-Saclay. Unité Mixte de Physique) ;
Kar, Gouri Sankar (Imec) ;
Sénéor, Pierre (Université Paris-Saclay. Unité Mixte de Physique) ;
Shin, Hyeon-Jin (Samsung Advanced Institute of Technology) ;
Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
Non-volatile magnetic random-access memories (MRAMs), such as spin-transfer torque MRAM and next-generation spin-orbit torque MRAM, are emerging as key to enabling low-power technologies, which are expected to spread over large markets from embedded memories to the Internet of Things. [...]
2022 - 10.1038/s41586-022-04768-0
Nature, Vol. 606, issue 7915 (June 2022) , p. 663-673
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4.
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41 p, 1.9 MB |
Van der Waals heterostructures for spintronics and opto-spintronics
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Sierra, Juan F. (Institut Català de Nanociència i Nanotecnologia) ;
Fabian, Jaroslav (University of Regensburg. Institute for Theoretical Physics) ;
Kawakami, Roland (Ohio State University. Department of Physics) ;
Roche, Stephan (Institut Català de Nanociència i Nanotecnologia) ;
Valenzuela, Sergio O. (Institut Català de Nanociència i Nanotecnologia)
The large variety of 2D materials and their co-integration in van der Waals heterostructures enable innovative device engineering. In addition, their atomically thin nature promotes the design of artificial materials by proximity effects that originate from short-range interactions. [...]
2021 - 10.1038/s41565-021-00936-x
Nature Nanotechnology, Vol. 16, issue 8 (August 2021) , p. 856-868
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5.
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6 p, 1.2 MB |
Electrical control of spin-polarized topological currents in monolayer WTe2
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Garcia, José H. (Institut Català de Nanociència i Nanotecnologia) ;
You, Jinxuan (Universitat Autònoma de Barcelona. Departament de Física) ;
García-Mota, Mónica (Simune Atomistics S.L.) ;
Koval, Peter (Simune Atomistics S.L.) ;
Ordejon, Pablo (Institut Català de Nanociència i Nanotecnologia) ;
Cuadrado, Ramón (Institut Català de Nanociència i Nanotecnologia) ;
Verstraete, Matthieu J. (Université de Liège. Complex and Entangled Systems from Atoms to Materials) ;
Zanolli, Zeila (Institut Català de Nanociència i Nanotecnologia) ;
Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
We evidence the possibility for coherent electrical manipulation of the spin orientation of topologically protected edge states in a low-symmetry quantum spin Hall insulator. By using a combination of ab initio simulations, symmetry-based modeling, and large-scale calculations of the spin Hall conductivity, it is shown that small electric fields can efficiently vary the spin textures of edge currents in monolayer 1T'-WTe2 by up to a 90-degree spin rotation, without jeopardizing their topological character. [...]
2022 - 10.1103/PhysRevB.106.L161410
Physical review B, Vol. 106, issue 16 (Oct. 2022) , art. L161410
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6.
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27 p, 2.2 MB |
Magnetism, symmetry and spin transport in van der Waals layered systems
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Kurebayashi, Hidekazu (London Centre for Nanotechnology. UCL) ;
Garcia, José H. (Institut Català de Nanociència i Nanotecnologia) ;
Khan, Safe (London Centre for Nanotechnology. UCL) ;
Sinova, Jairo (Academy of Sciences of the Czech Republic. Institute of Physics) ;
Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
The discovery of an ever-increasing family of atomic layered magnetic materials, together with the already established vast catalogue of strong spin-orbit coupling and topological systems, calls for some guiding principles to tailor and optimize novel spin transport and optical properties at their interfaces. [...]
2022 - 10.1038/s42254-021-00403-5
Nature Reviews Physics, Vol. 4, issue 3 (March 2022) , p. 150-166
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7.
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21 p, 7.4 MB |
Control of spin-charge conversion in van der Waals heterostructures
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Galceran, Regina (Institut Català de Nanociència i Nanotecnologia) ;
Tian, Bo (King Abdullah University of Science and Technology) ;
Li, Junzhu (King Abdullah University of Science and Technology) ;
Bonell, Frédéric (University of Grenoble Alpes. Spintec) ;
Jamet, Matthieu (University of Grenoble Alpes. Spintec) ;
Vergnaud, Céline (University of Grenoble Alpes. Spintec) ;
Marty, Alain (University of Grenoble Alpes. Spintec) ;
Garcia, José H. (Institut Català de Nanociència i Nanotecnologia) ;
Sierra, Juan F. (Institut Català de Nanociència i Nanotecnologia) ;
Costache, Marius Vasile (Institut Català de Nanociència i Nanotecnologia) ;
Roche, Stephan (Institut Català de Nanociència i Nanotecnologia) ;
Valenzuela, Sergio O. (Institut Català de Nanociència i Nanotecnologia) ;
Manchon, Auréliene (Aix-Marseille Université) ;
Zhang, Xixiang (King Abdullah University of Science and Technology) ;
Schwingenschlögl, Udo (King Abdullah University of Science and Technology)
The interconversion between spin and charge degrees of freedom offers incredible potential for spintronic devices, opening routes for spin injection, detection, and manipulation alternative to the use of ferromagnets. [...]
2021 - 10.1063/5.0054865
APL Materials, Vol. 9, issue 10 (Oct. 2021) , art. 100901
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8.
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9 p, 750.9 KB |
Low-symmetry topological materials for large charge-to-spin interconversion : the case of transition metal dichalcogenide monolayers
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Vila Tusell, Marc (Universitat Autònoma de Barcelona. Departament de Física) ;
Hsu, Chuang-Han (National University of Singapore. Department of Electrical and Computer Engineering) ;
Garcia, José H. (Institut Català de Nanociència i Nanotecnologia) ;
Benítez, L. Antonio (Institut Català de Nanociència i Nanotecnologia) ;
Waintal, Xavier (Université Grenoble Alpes. Commissariat à l'énergie atomique et aux énergies alternatives) ;
Valenzuela, Sergio O. (Institut Català de Nanociència i Nanotecnologia) ;
Pereira, Víctor M. (National University of Singapore. Centre for Advanced 2D Materials and Graphene Research Centre) ;
Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
The spin polarization induced by the spin Hall effect (SHE) in thin films typically points out of the plane. This is rooted on the specific symmetries of traditionally studied systems, not in a fundamental constraint. [...]
2021 - 10.1103/PhysRevResearch.3.043230
Physical Review Research, Vol. 3, issue 4 (Dec. 2021) , art. 43230
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9.
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60 p, 7.3 MB |
The 2021 quantum materials roadmap
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Giustino, Feliciano (The University of Texas at Austin. Department of Physics) ;
Lee, Jin Hong (Centre national de la recherche scientifique. Unité Mixte de Physique) ;
Trier, Felix (Centre national de la recherche scientifique. Unité Mixte de Physique) ;
Bibes, Manuel (Centre national de la recherche scientifique. Unité Mixte de Physique) ;
Winter, Stephen M. (Goethe-Universität Frankfurt. Institut für Theoretische Physik) ;
Valentí, Roser (Goethe-Universität Frankfurt. Institut für Theoretische Physik) ;
Son, Young-Woo (Korea Institute for Advanced Study) ;
Taillefer, Louis (Université de Sherbrooke. Département de physique) ;
Heil, Christoph (Graz University of Technology. Institute of Theoretical and Computational Physics) ;
Figueroa García, Adriana Isabel (Institut Català de Nanociència i Nanotecnologia) ;
Plaçais, Bernard (Université PSL. Laboratoire de Physique de l'Ecole normale supérieure) ;
Wu, QuanSheng (École Polytechnique Fédérale de Lausanne. Institute of Physics) ;
Yazyev, Oleg V. (École Polytechnique Fédérale de Lausanne. Institute of Physics) ;
Bakkers, Erik P. A. M (Eindhoven University of Technology) ;
Nygård, Jesper (University of Copenhagen. Niels Bohr Institute) ;
Forn-Díaz, Pol (Institut de Física d'Altes Energies) ;
De Franceschi, Silvano (University Grenoble Alpes) ;
McIver, J.W. (Max Planck Institute for the Structure and Dynamics of Matter) ;
Foa Torres, L.E.F. (Universidad de Chile. Departamento de Física) ;
Low, Tony (University of Minnesota. Department of Electrical and Computer Engineering) ;
Kumar, Anshuman (Indian Institute of Technology Bombay. Physics Department) ;
Galceran, Regina (Institut Català de Nanociència i Nanotecnologia) ;
Valenzuela, Sergio O. (Institut Català de Nanociència i Nanotecnologia) ;
Costache, Marius Vasile (Institut Català de Nanociència i Nanotecnologia) ;
Manchon, Aurélien (Aix-Marseille Université. CINaM) ;
Kim, Eun-Ah (Cornell University. Department of Physics) ;
Schleder, Gabriel R . (Brazilian Nanotechnology National Laboratory) ;
Fazzio, Adalberto (Brazilian Nanotechnology National Laboratory) ;
Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
In recent years, the notion of 'Quantum Materials' has emerged as a powerful unifying concept across diverse fields of science and engineering, from condensed-matter and coldatom physics to materials science and quantum computing. [...]
2020 - 10.1088/2515-7639/abb74e
JPhys materials, Vol. 3, issue 4 (Oct. 2020) , art. 42006
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10.
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8 p, 2.8 MB |
Emerging properties of non-crystalline phases of graphene and boron nitride based materials
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Antidormi, Aleandro (Institut Català de Nanociència i Nanotecnologia) ;
Colombo, Luigi (The University of Texas at Dallas. Department of Materials Science and Engineering) ;
Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
We review recent developments on the synthesis and properties of two-dimensional materials which, although being mainly of an sp bonding character, exhibit highly disordered, non-uniform and structurally random morphologies. [...]
2022 - 10.1016/j.nanoms.2021.03.003
Nano Materials Science, Vol. 4, issue 1 (March 2022) , p. 10-17
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