Resultats globals: 29 registres trobats en 0.02 segons.
Articles, 28 registres trobats
Documents de recerca, 1 registres trobats
Articles 28 registres trobats  1 - 10següentfinal  anar al registre:
1.
7 p, 4.6 MB Valley-polarized quantum transport generated by gauge fields in graphene / Settnes, Mikkel (Danmarks Tekniske Universitet. Department of Photonics Engineering) ; Garcia, José H. (Institut Català de Nanociència i Nanotecnologia) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
We report on the possibility to simultaneously generate in graphene a bulk valley-polarized dissipative transport and a quantum valley Hall effect by combining strain-induced gauge fields and real magnetic fields. [...]
2017 - 10.1088/2053-1583/aa7cbd
2D Materials, Vol. 4, issue 3 (September 2017) , art. 31006  
2.
9 p, 1.1 MB Quantum transport in graphene in presence of strain-induced pseudo-Landau levels / Settnes, Mikkel (Danmarks Tekniske Universitet. Department of Photonics Engineering) ; Leconte, Nicolas (Institut Català de Nanociència i Nanotecnologia) ; Barrios-Vargas, José Eduardo (Institut Català de Nanociència i Nanotecnologia) ; Jauho, Antti-Pekka (Danmarks Tekniske Universitet. Department of Photonics Engineering) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
Wereport on mesoscopic transport fingerprints in disordered graphene caused by strain-field induced pseudomagnetic Landau levels (pLLs). Efficient numerical real space calculations of the Kubo formula are performed for an ordered network of nanobubbles in graphene, creating pseudomagnetic fields up to several hundreds of Tesla, values inaccessible by real magnetic fields. [...]
2016 - 10.1088/2053-1583/3/3/034005
2D Materials, Vol. 3, issue 3 (Jan. 2016) , art. 34005  
3.
81 p, 4.0 MB Charge, spin and valley Hall effects in disordered grapheme / Cresti, Alessandro (Université Grenoble Alpes) ; Nikolíc, B.K. (University of Delaware. Department of Physics and Astronomy) ; Garcia, José H. (Institut Català de Nanociència i Nanotecnologia) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
The discovery of the integer quantum Hall effect in the early eighties of the last century, with highly precise quantization values for the Hall conductance in multiples of e2/h, has been the first fascinating manifestation of the topological state of matter driven by magnetic field and disorder, and related to the formation of non-dissipative current flow. [...]
2016 - 10.1393/ncr/i2016-10130-6
Rivista del nuovo cimento, Vol. 39, issue 12 (December 2016) , p. 587-667  
4.
7 p, 2.3 MB Spin hall effect and origins of nonlocal Resistance in adatom-decorated graphene / Dinh, Van Tuan (Institut Català de Nanociència i Nanotecnologia) ; Marmolejo Tejada, J.M. (University of Delaware. Department of Physics and Astronomy) ; Waintal, X. (Université Grenoble Alpes) ; Nikolić, B.K. (University of Delaware. Department of Physics and Astronomy) ; Valenzuela, Sergio O. (Institut Català de Nanociència i Nanotecnologia) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
Recent experiments reporting an unexpectedly large spin Hall effect (SHE) in graphene decorated with adatoms have raised a fierce controversy. We apply numerically exact Kubo and Landauer-Büttiker formulas to realistic models of gold-decorated disordered graphene (including adatom clustering) to obtain the spin Hall conductivity and spin Hall angle, as well as the nonlocal resistance as a quantity accessible to experiments. [...]
2016 - 10.1103/PhysRevLett.117.176602
Physical review letters, Vol. 117, issue 17 (Oct. 2016) , p. 176602  
5.
10 p, 908.2 KB Thermal conductivity of MoS2 polycrystalline nanomembranes / Sledzinska, Marianna (Institut Català de Nanociència i Nanotecnologia) ; Graczykowski, Bartlomiej (Institut Català de Nanociència i Nanotecnologia) ; Placidi, Marcel (Institut de Recerca en Energía de Catalunya) ; Saleta Reig, David (Institut Català de Nanociència i Nanotecnologia) ; Sachat, Alexandros el (Universitat Autònoma de Barcelona. Departament de Física) ; Reparaz, Sebastián (Institut Català de Nanociència i Nanotecnologia) ; Alzina, Francesc (Institut Català de Nanociència i Nanotecnologia) ; Mortazavi, Bohayra (Bauhaus-Universität Weimar (Alemanya). Institute of Structural Mechanics) ; Quey, Romain (Centre national de la recherche scientifique. École nationale supérieure des mines de Saint-Étienne) ; Colombo, Luciano (Institut Català de Nanociència i Nanotecnologia) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia) ; Sotomayor Torres, Clivia M. (Institut Català de Nanociència i Nanotecnologia)
Heat conduction in 2D materials can be effectively engineered by means of controlling nanoscale grain structure. Afavorable thermal performance makes these structures excellent candidates for integrated heat management units. [...]
2016 - 10.1088/2053-1583/3/3/035016
2D Materials, Vol. 3, no. 3 (Sep. 2016) , art. 35016  
6.
14 p, 1.6 MB Localized electronic states at grain boundaries on the surface of graphene and graphite / Luican-Mayer, Adina (University of Ottawa. Department of Physics) ; Barrios-Vargas, José Eduardo (Institut Català de Nanociència i Nanotecnologia) ; Falkenberg, Jesper Toft (Technical University of Denmark. Department of Micro- and Nanotechnology) ; Autès, Gabriel (Institute of Physics, Ecole Polytechnique Fédérale de Lausanne (EPFL)) ; Cummings, Aron W. (Institut Català de Nanociència i Nanotecnologia) ; Soriano, David (Institut Català de Nanociència i Nanotecnologia) ; Li, Guohong (Rutgers University. Department of Physics and Astronomy) ; Brandbyge, Mads (Technical University of Denmark. Department of Micro- and Nanotechnology) ; Yazyev, Oleg V. (Institute of Physics. Ecole Polytechnique Fédérale de Lausanne (EPFL)) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia) ; Yandrei, Eva Y. (Rutgers University. Department of Physics and Astronomy)
Recent advances in large-scale synthesis of graphene and other 2D materials have underscored the importance of local defects such as dislocations and grain boundaries (GBs), and especially their tendency to alter the electronic properties of the material. [...]
2016 - 10.1088/2053-1583/3/3/031005
2D Materials, Vol. 3, Núm. 3 (September 2016) , art. 031005  
7.
12 p, 6.0 MB How disorder affects topological surface states in the limit of ultrathin Bi2Se3 films / Song, Kenan (Institut Català de Nanociència i Nanotecnologia) ; Robles, Roberto (Institut Català de Nanociència i Nanotecnologia) ; Soriano, David (Institut Català de Nanociència i Nanotecnologia) ; Ordejón Rontomé, Pablo (Institut Català de Nanociència i Nanotecnologia) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
We present a first-principles study of electronic properties of ultrathin films of topological insulators (TIs) and scrutinize the role of disorder on the robustness of topological surface states, which can be analysed through their spin textures. [...]
2016 - 10.1088/2053-1583/3/4/045007
2D Materials, Vol. 3, Núm. 4 (December 2016) , art. 045007  
8.
26 p, 1.8 MB Growth of Twin-Free and Low-Doped Topological Insulators on BaF2(111) / Bonell, Frédéric (Institut Català de Nanociència i Nanotecnologia) ; Cuxart, Marc G. (Institut Català de Nanociència i Nanotecnologia) ; Song, Kenan (Institut Català de Nanociència i Nanotecnologia) ; Robles, Roberto (Institut Català de Nanociència i Nanotecnologia) ; Ordejón Rontomé, Pablo (Institut Català de Nanociència i Nanotecnologia) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia) ; Mugarza, Aitor (Institució Catalana de Recerca i Estudis Avançats (ICREA)) ; Valenzuela, Sergio O. (Institut Català de Nanociència i Nanotecnologia) ; Universitat Autònoma de Barcelona
We demonstrate the growth of twin-free BiTe and SbTe topological insulators by molecular beam epitaxy and a sizable reduction of the twin density in BiSe on lattice-matched BaF(111) substrates. Using X-ray diffraction, electron diffraction and atomic force microscopy, we systematically investigate the parameters influencing the formation of twin domains and the morphology of the films, and show that Se- and Te-based alloys differ by their growth mechanism. [...]
2017 - 10.1021/acs.cgd.7b00525
Crystal Growth and Design, Vol. 17, Núm. 9 (September 2017) , p. 4655-4660  
9.
6 p, 1.1 MB Unconventional features in the quantum Hall regime of disordered graphene : Percolating impurity states and Hall conductance quantization / Leconte, Nicolas (Institut Català de Nanociència i Nanotecnologia) ; Ortmann, Frank (Technische Universität Dresden) ; Cresti, Alessandro (Université Grenoble Alpes) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
We report on the formation of critical states in disordered graphene, at the origin of variable and unconventional transport properties in the quantum Hall regime, such as a zero-energy Hall conductance plateau in the absence of an energy band gap and Landau-level degeneracy breaking. [...]
2016 - 10.1103/PhysRevB.93.115404
Physical Review B, Vol. 93, Núm. 11 (March 2016) , p. 115404  
10.
12 p, 491.8 KB Anomalous ballistic transport in disordered bilayer graphene : A Dirac semimetal induced by dimer vacancies / Dinh, Van Tuan (Institut Català de Nanociència i Nanotecnologia) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
We report anomalous quantum transport features in bilayer graphene in the presence of a random distribution of structural vacancies. By using an efficient real-space Kubo-Greenwood transport methodology, the impact of a varying density of dimer versus nondimer vacancies is investigated in very large scale disordered models. [...]
2016 - 10.1103/PhysRevB.93.041403
Physical Review B, Vol. 93, Isuue 4 (January 2016) , p. 041403(R)  

Articles : 28 registres trobats   1 - 10següentfinal  anar al registre:
Documents de recerca 1 registres trobats  
1.
228 p, 4.6 MB Charge and Spin Transport in Disordered Graphene-Based Materials / Van Tuan, Dinh ; Roche, Stephan, dir. ; Pascual, Jordi ; Universitat Autònoma de Barcelona. Departament de Física
Esta tesis está enfocada en la modelización y simulación del transporte de carga y spin en materiales bidimensionales basados en Grafeno, así como en el impacto de la policristalinidad en el rendimiento de transistores de efecto campo diseñados con este tipo de materiales. [...]
This thesis is focused on modeling and simulation of charge and spin transport in two dimensional graphene-based materials as well as the impact of graphene polycrystallinity on the performance of graphene field-effect transistors. [...]

[Barcelona] : Universitat Autònoma de Barcelona, 2014  

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