Resultados globales: 69 registros encontrados en 0.02 segundos.
Artículos, Encontrados 68 registros
Documentos de investigación, Encontrados 1 registros
Artículos Encontrados 68 registros  1 - 10siguientefinal  ir al registro:
1.
14 p, 1.4 MB Machine-learning interatomic potentials enable first-principles multiscale modeling of lattice thermal conductivity in graphene/borophene heterostructures / Mortazavi, Bohayra (Leibniz Universität Hannover. Department of Mathematics and Physics) ; Podryabinkin, Evgeny V. (Skolkovo Innovation Center) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia) ; Rabczuk, Timon (Tongji University. Department of Geotechnical Engineering) ; Zhuang, Xiaoying (Leibniz Universität Hannover. Department of Mathematics and Physics) ; Shapeev, Alexander V. (Skolkovo Institute of Science and Technology)
One of the ultimate goals of computational modeling in condensed matter is to be able to accurately compute materials properties with minimal empirical information. First-principles approaches such as density functional theory (DFT) provide the best possible accuracy on electronic properties but they are limited to systems up to a few hundreds, or at most thousands of atoms. [...]
2020 - 10.1039/d0mh00787k
Materials Horizons, Vol. 7, issue 9 (2020) , p. 2359-2367  
2.
27 p, 986.9 KB Magnetism, spin dynamics, and quantum transport in two-dimensional systems / Savero Torres, Williams (Institut Català de Nanociència i Nanotecnologia) ; Sierra, Juan F. (Institut Català de Nanociència i Nanotecnologia) ; Benítez, L. Antonio (Institut Català de Nanociència i Nanotecnologia) ; Bonell, Frédéric (Université Grenoble-Alpes) ; García, José Hugo (Institut Català de Nanociència i Nanotecnologia) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia) ; Valenzuela, Sergio O. (Institut Català de Nanociència i Nanotecnologia)
Two-dimensional (2D) quantum materials offer a unique platform to explore mesoscopic phenomena driven by interfacial and topological effects. Their tunable electric properties and bidimensional nature enable their integration into sophisticated heterostructures with engineered properties, resulting in the emergence of new exotic phenomena not accessible in other platforms. [...]
2020 - 10.1557/mrs.2020.121
MRS Bulletin, Vol. 45, issue 5 (May 2020) , p. 357-365  
3.
13 p, 342.2 KB Optimization of the sensitivity of a double-dot magnetic detector / Macucci, Massimo (Università di Pisa. Dipartimento di Ingegneria dell'Informazione) ; Marconcini, Paolo (Università di Pisa. Dipartimento di Ingegneria dell'Informazione) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
We investigate, by means of numerical simulations, the lowest magnetic field level that can be detected with a given relative accuracy with a sensor based on a double-dot device fabricated in a high-mobility two-dimensional electron gas. [...]
2020 - 10.3390/electronics9071134
Electronics, Vol. 9, issue 7 (July 2020) , art. 1134  
4.
6 p, 3.4 MB Blue emission at atomically sharp 1D heterojunctions between graphene and h-BN / Kim, Gwangwoo (Ulsan National Institute of Science and Technology. Department of Chemistry) ; Ma, Kyung Yeol (Ulsan National Institute of Science and Technology. Department of Energy Engineering) ; Park, Minsu (Korea Advanced Institute of Science and Technology. Department of Materials Science and Engineering) ; Kim, Minsu (Ulsan National Institute of Science and Technology. Department of Chemistry) ; Jeon, Jonghyuk (Seoul National University. Department of Chemistry) ; Song, Jinouk (Korea Advanced Institute of Science and Technology. School of Electrical Engineering) ; Barrios Vargas, José Eduardo (Universidad Nacional Autónoma de México. Departamento de Física y Química Teórica) ; Sato, Yuta (National Institute of Advanced Industrial Science and Technology. Nanomaterials Research Institute) ; Lin, Yung-Chang (National Institute of Advanced Industrial Science and Technology. Nanomaterials Research Institute) ; Suenaga, Kazu (National Institute of Advanced Industrial Science and Technology. Nanomaterials Research Institute) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia) ; Yoo, Seunghyup (Korea Advanced Institute of Science and Technology. School of Electrical Engineering) ; Sohn, Byeong-Hyeok (Seoul National University. Department of Chemistry) ; Jeon, Seokwoo (Korea Advanced Institute of Science and Technology. Department of Materials Science and Engineering) ; Shin, Hyeon Suk (Ulsan National Institute of Science and Technology. Low Dimensional Carbon Material Center)
Atomically sharp heterojunctions in lateral two-dimensional heterostructures can provide the narrowest one-dimensional functionalities driven by unusual interfacial electronic states. For instance, the highly controlled growth of patchworks of graphene and hexagonal boron nitride (h-BN) would be a potential platform to explore unknown electronic, thermal, spin or optoelectronic property. [...]
2020 - 10.1038/s41467-020-19181-2
Nature communications, Vol. 11 (2020) , art. 5359  
5.
6 p, 1.1 MB Transport fingerprints at graphene superlattice Dirac points induced by a boron nitride substrate / Martínez Gordillo, Rafael (Institut Català de Nanociència i Nanotecnologia) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia) ; Ortmann, Frank (Institut Català de Nanociència i Nanotecnologia) ; Pruneda, Miguel (Institut Català de Nanociència i Nanotecnologia)
We report peculiar transport fingerprints at the secondary Dirac points created by the interaction between graphene and boron nitride layers. By performing ab initio calculations, the electronic characteristics of the moiré patterns produced by the interaction between layers are first shown to be in good agreement with experimental data, and further used to calibrate the tight-binding model implemented for the transport study. [...]
2014 - 10.1103/PhysRevB.89.161401
Physical review B : Condensed matter and materials physics, Vol. 89, issue 16 (April 2014) , art. 161401  
6.
12 p, 2.3 MB Multiple quantum phases in graphene with enhanced spin-orbit coupling : from the quantum spin hall regime to the spin hall effect and a robust metallic state / Cresti, Alessandro (IMEP-LAHC) ; Dinh, Van Tuan (Universitat Autònoma de Barcelona. Departament de Física) ; Soriano, David (Institut Català de Nanociència i Nanotecnologia) ; Cummings, Aron (Institut Català de Nanociència i Nanotecnologia) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
We report an intriguing transition from the quantum spin Hall phase to the spin Hall effect upon segregation of thallium adatoms adsorbed onto a graphene surface. Landauer-Büttiker and Kubo-Greenwood simulations are used to access both edge and bulk transport physics in disordered thallium-functionalized graphene systems of realistic sizes. [...]
2014 - 10.1103/PhysRevLett.113.246603
Physical review letters, Vol. 113, issue 24 (Dec. 2014) , art. 246603  
7.
7 p, 981.7 KB Anisotropic behavior of quantum transport in graphene superlattices : coexistence of ballistic conduction with Anderson insulating regime / Pedersen, Jesper Goor (Institut Català de Nanociència i Nanotecnologia) ; Cummings, Aron (Institut Català de Nanociència i Nanotecnologia) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
We report on the possibility to generate highly anisotropic quantum conductivity in disordered graphene-based superlattices. Our quantum simulations, based on an efficient real-space implementation of the Kubo-Greenwood formula, show that in disordered graphene superlattices the strength of multiple scattering phenomena can strongly depend on the transport measurement geometry. [...]
2014 - 10.1103/PhysRevB.89.165401
Physical review B : Condensed matter and materials physics, Vol. 89, issue 16 (April 2014) , art. 165401  
8.
12 p, 487.8 KB Fingerprints of inelastic transport at the surface of the topological insulator Bi 2 Se 3 : role of electron-phonon coupling / Costache, Marius Vasile (Institut Català de Nanociència i Nanotecnologia) ; Neumann, Ingmar (Institut Català de Nanociència i Nanotecnologia) ; Sierra, Juan F. (Institut Català de Nanociència i Nanotecnologia) ; Marinova, V. (Bulgarian Academy of Science. Institute of Optical Materials and Technologies) ; Gospodinov, M.M. (Bulgarian Academy of Sciences. Institute of Solid State Physics) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia) ; Valenzuela, Sergio O. (Institut Català de Nanociència i Nanotecnologia)
We report on electric-field and temperature-dependent transport measurements in exfoliated thin crystals of the Bi2Se3 topological insulator. At low temperatures (<50 K) and when the chemical potential lies inside the bulk gap, the crystal resistivity is strongly temperature dependent, reflecting inelastic scattering due to the thermal activation of optical phonons. [...]
2014 - 10.1103/PhysRevLett.112.086601
Physical review letters, Vol. 112, issue 8 (Feb. 2014) , art. 86601  
9.
6 p, 979.5 KB Anomalous dissipation mechanism and Hall quantization limit in polycrystalline graphene grown by chemical vapor deposition / Lafont, F. (Laboratoire National de Métrologie et d'Essais) ; Ribeiro-Palau, Rebeca (Laboratoire National de Métrologie et d'Essais) ; Han, Z. (Institut polytechnique de Grenoble. Institut Néel) ; Cresti, Alessandro (Institut polytechnique de Grenoble. Institute of Microelectronics, Electromagnetism and Photonics) ; Delvallée, Alexandra (Laboratoire National de Métrologie et d'Essais) ; Cummings, Aron (Institut Català de Nanociència i Nanotecnologia) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia) ; Bouchiat, Vincent (Institut polytechnique de Grenoble. Institut Néel) ; Ducourtieux, Sebastien (Laboratoire National de Métrologie et d'Essais) ; Schopfer, F. (Laboratoire National de Métrologie et d'Essais) ; Poirier, W. (Laboratoire National de Métrologie et d'Essais)
We report on the observation of strong backscattering of charge carriers in the quantum Hall regime of polycrystalline graphene, grown by chemical vapor deposition, which alters the accuracy of the Hall resistance quantization. [...]
2014 - 10.1103/PhysRevB.90.115422
Physical review B : Condensed matter and materials physics, Vol. 90, issue 11 (Sep. 2014) , art. 115422  
10.
11 p, 213.0 KB Physical model of the contact resistivity of metal-graphene junctions / Chaves Romero, Ferney Alveiro (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Jiménez Jiménez, David (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Cummings, Aron (Institut Català de Nanociència i Nanotecnologia) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
While graphene-based technology shows great promise for a variety of electronic applications, including radio-frequency devices, the resistance of the metal-graphene contact is a technological bottleneck for the realization of viable graphene electronics. [...]
2014 - 10.1063/1.4874181
Journal of applied physics, Vol. 115, issue 16 (April 2014) , art. 164513  

Artículos : Encontrados 68 registros   1 - 10siguientefinal  ir al registro:
Documentos de investigación Encontrados 1 registros  
1.
228 p, 4.6 MB Charge and Spin Transport in Disordered Graphene-Based Materials / Dinh, Van Tuan ; Roche, Stephan, dir. ; Pascual, Jordi ; Universitat Autònoma de Barcelona. Departament de Física
Esta tesis está enfocada en la modelización y simulación del transporte de carga y spin en materiales bidimensionales basados en Grafeno, así como en el impacto de la policristalinidad en el rendimiento de transistores de efecto campo diseñados con este tipo de materiales. [...]
This thesis is focused on modeling and simulation of charge and spin transport in two dimensional graphene-based materials as well as the impact of graphene polycrystallinity on the performance of graphene field-effect transistors. [...]

[Barcelona] : Universitat Autònoma de Barcelona, 2014  

Vea también: autores con nombres similares
8 Roche, S.
1 Roche, Stephan,
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