Results overview: Found 7 records in 0.02 seconds.
Articles, 7 records found
Articles 7 records found  
1.
6 p, 514.5 KB Tailoring the magnetization reversal of elliptical dots using exchange bias (invited) / Sort Viñas, Jordi (Institució Catalana de Recerca i Estudis Avançats) ; Buchanan, K. S. (Argonne National Laboratory. Materials Science Division) ; Pearson, J. E. (Argonne National Laboratory. Materials Science Division) ; Hoffmann, Axel (Argonne National Laboratory. Materials Science Division) ; Menéndez Dalmau, Enric (Universitat Autònoma de Barcelona. Departament de Física) ; Salazar Álvarez, Germán (Institut Català de Nanociència i Nanotecnologia) ; Baró, M. D. (Universitat Autònoma de Barcelona. Departament de Física) ; Miron, M. ((SPINTEC (Spin Electronics Research))) ; Rodmacq, B. ((SPINTEC (Spin Electronics Research))) ; Dieny, B. ((SPINTEC (Spin Electronics Research))) ; Nogués i Sanmiquel, Josep (Institut Català de Nanociència i Nanotecnologia)
Exchange bias effects have been studied in elliptical dots composed of ferromagnetic Ni80Fe20–antiferromagnetic Ir20Mn80 bilayers. The magnetization reversal mechanisms and magnetic configurations have been investigated by magneto-optic Kerr effect and magnetic force microscopy. [...]
2008 - 10.1063/1.2840467
Journal of applied physics, Vol. 103, Núm. 7 (April 2008) , p. 7C109/1-7C109/5  
2.
4 p, 325.4 KB Using exchange bias to extend the temperature range of square loop behavior in [Pt/Co] multilayers with perpendicular anisotropy / Sort Viñas, Jordi (Universitat Autònoma de Barcelona. Departament de Física) ; Suriñach, Santiago (Suriñach Cornet) (Universitat Autònoma de Barcelona. Departament de Física) ; Garcia, F. (SPINTEC (Spin Electronics Research)) ; Auffret, S. (SPINTEC (Spin Electronics Research)) ; Rodmacq, B. (SPINTEC (Spin Electronics Research)) ; Dieny, B. (SPINTEC (Spin Electronics Research)) ; Langlais, Veronique (Universitat Autònoma de Barcelona. Departament de Física) ; Muñoz Domínguez, Juan Santiago (Universitat Autònoma de Barcelona. Departament de Física) ; Baró, M. D. (Universitat Autònoma de Barcelona. Department de Física) ; Nogués i Sanmiquel, Josep (Universitat Autònoma de Barcelona. Departament de Física)
The temperature dependence of the magnetic properties of [Pt/Co]multilayers (ML), exhibiting perpendicular anisotropy, with and without exchange biasing with an antiferromagnet(AFM) has been investigated. [...]
2005 - 10.1063/1.2139840
Applied physics letters, Vol. 87, Issue 24 (December 2005) , p. 242504/1-242504/3  
3.
4 p, 219.8 KB Pinned synthetic ferrimagnets with perpendicular anisotropy and tuneable exchange bias / Sort Viñas, Jordi (SPINTEC (Spin Electronics Research)) ; Rodmacq, B. (SPINTEC (Spin Electronics Research)) ; Auffret, S. (SPINTEC (Spin Electronics Research)) ; Dieny, B. (SPINTEC (Spin Electronics Research)) ; American Physical Society
Pinned synthetic ferrimagnets (syFerri) with perpendicular-to-plane magnetic anisotropy, of the form AP1/Ru/AP2/FeMn [where AP1 and AP2 are (Co/Pt) multilayers], have been prepared and characterized. [...]
2003 - 10.1063/1.1606495
Applied physics letters, Vol. 83, Issue 9 (August 2003) , p. 1800-1802  
4.
4 p, 233.4 KB Large anomalous enhancement of perpendicular exchange bias by introduction of a nonmagnetic spacer between the ferromagnetic and antiferromagnetic layers / Garcia, F. (SPINTEC (Spin Electronics Research)) ; Sort Viñas, Jordi (SPINTEC (Spin Electronics Research)) ; Rodmacq, B. (SPINTEC (Spin Electronics Research)) ; Auffret, S. (SPINTEC (Spin Electronics Research)) ; Dieny, B. (SPINTEC (Spin Electronics Research)) ; American Physical Society
In (Pt/Co)n/FeMnmultilayers, the magnitude of exchange bias,HE, can be considerably enhanced by placing an ultrathin nonmagnetic Pt spacer between the multilayer (ML) and the antiferromagnetic(AFM) layer. [...]
2003 - 10.1063/1.1619562
Applied physics letters, Vol. 83, Issue 17 (October 2003) , p. 3537-3539  
5.
4 p, 232.0 KB Size effects on exchange bias in sub-100 nm ferromagnetic–antiferromagnetic dots deposited on prepatterned substrates / Baltz, V. (SPINTEC (Spin Electronics Research)) ; Sort Viñas, Jordi (SPINTEC (Spin Electronics Research)) ; Rodmacq, B. (SPINTEC (Spin Electronics Research)) ; Dieny, B. (SPINTEC (Spin Electronics Research)) ; Landis, S. (LETI/D2NT, CEA (Grenoble, França)) ; American Physical Society
Exchange bias effects have been investigated in ferromagnetic (FM)–antiferromagnetic (AFM) square dots, with lateral sizes of 90 nm, sputtered on a prepatterned Si substrate. The magnetic behavior of the dots has been compared with that of a continuous FM–AFM bilayer with the same composition. [...]
2004 - 10.1063/1.1757646
Applied physics letters, Vol. 84, Issue 24 (May 2004) , p. 4923-4925  
6.
4 p, 289.4 KB Out-of-plane exchange bias in [Pt/Co]–IrMn bilayers sputtered on prepatterned nanostructures / Bollero, A. (SPINTEC (Spin Electronics Research)) ; Baltz, V. (SPINTEC (Spin Electronics Research)) ; Rodmacq, B. (SPINTEC (Spin Electronics Research)) ; Dieny, B. (SPINTEC (Spin Electronics Research)) ; Landis, S. (LETI/D2NT, CEA (Grenoble, França)) ; Sort Viñas, Jordi (Universitat Autònoma de Barcelona. Departament de Física) ; American Physical Society
Exchange bias effects along the out-of-plane direction have been investigated in arrays of 100nmnanostructures prepared on top of prepatterned substrates, consisting of a ferromagnetic [Pt/Co] multilayer with out-of-plane anisotropy exchange coupled to an antiferromagnetic IrMn layer. [...]
2006 - 10.1063/1.2359429
Applied physics letters, Vol. 89, Issue 15 (October 2006) , p. 152502/1-152502/3  
7.
4 p, 332.0 KB Tailoring size effects on the exchange bias in ferromagnetic-antiferromagnetic <100 nm nanostructures / Baltz, V. (Centre national de la recherche scientifique (França)) ; Sort Viñas, Jordi (Centre national de la recherche scientifique (França)) ; Landis, S. (LETI/D2NT, CEA (Grenoble, França)) ; Rodmacq, B. (Centre national de la recherche scientifique (França)) ; Dieny, B. (Centre national de la recherche scientifique (França)) ; American Physical Society
The hysteresis loop shift in sub-100 nm ferromagnetic- (FM-)antiferromagnetic (AFM) nanostructures can be either enhanced or reduced with respect to continuous films with the same composition, with varying the AFM layer thickness. [...]
2005 - 10.1103/PhysRevLett.94.117201
Physical review letters, Vol. 94, Issue 11 (March 2005) , p. 117201  

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