Resultats globals: 3 registres trobats en 0.01 segons.
Articles, 3 registres trobats
Articles 3 registres trobats  
1.
14 p, 2.2 MB Anisotropic features in the electronic structure of the two-dimensional transition metal trichalcogenide TiS3 : electron doping and plasmons / Silva-Guillén, Jose Angel (Fundación IMDEA Nanociencia) ; Canadell Casanova, Enric 1950- (Institut de Ciència de Materials de Barcelona) ; Ordejon, Pablo (Institut Català de Nanociència i Nanotecnologia) ; Guinea, Francisco (University of Manchester. Department of Physics and Astronomy) ; Roldan, Rafael (Instituto de Ciencia de Materiales de Madrid)
Analysis of the band structure of TiS single-layers suggests the possibility of changing their physical behaviour by injecting electron carriers. The anisotropy of the valence and conduction bands is explained in terms of their complex orbital composition. [...]
2017 - 10.1088/2053-1583/aa6b92
2D Materials, Vol. 4, Núm. 2 (June 2017) , art. 25085  
2.
10 p, 331.0 KB Electronic properties of single-layer and multilayer transition metal dichalcogenides MX₂ (M = Mo, W and X = S, Se) / Roldan, Rafael (Instituto de Ciencia de Materiales de Madrid) ; Silva-Guillén, Jose Angel (Institut Català de Nanociència i Nanotecnologia) ; López-Sancho, M. Pilar (Instituto de Ciencia de Materiales de Madrid) ; Guinea, Francisco (Instituto de Ciencia de Materiales de Madrid) ; Cappelluti, Emmanuele (Consiglio Nazionale delle Ricerche. Istituto de Sistemi Complessi) ; Ordejon, Pablo (Institut Català de Nanociència i Nanotecnologia)
Single- and few-layer transition metal dichalcogenides have recently emerged as a new family of layered crystals with great interest, not only from the fundamental point of view, but also because of their potential application in ultrathin devices. [...]
2014 - 10.1002/andp.201400128
Annalen der Physik, Vol. 526, issue 9-10 (Oct. 2014) , p. 347-357  
3.
13 p, 2.2 MB Momentum dependence of spin-orbit interaction effects in single-layer and multi-layer transition metal dichalcogenides / Roldan, Rafael (Instituto de Ciencia de Materiales de Madrid) ; López Sancho, M. Pilar (Instituto de Ciencia de Materiales de Madrid) ; Guinea, Francisco (Instituto de Ciencia de Materiales de Madrid) ; Cappelluti, Emmanuele (Istituto de Sistemi Complessi) ; Silva-Guillén, Jose Angel (Institut Català de Nanociència i Nanotecnologia) ; Ordejon, Pablo (Institut Català de Nanociència i Nanotecnologia)
One of the main characteristics of the new family of two-dimensional crystals of semiconducting transition metal dichalcogenides (TMDs) is the strong spin-orbit interaction, which makes them very promising for future applications in spintronics and valleytronics devices. [...]
2014 - 10.1088/2053-1583/1/3/034003
2D Materials, Vol. 1, Núm. 3 (December 2014) , art. 34003  

Vegeu també: autors amb noms similars
1 Roldán, R.
1 Roldán, R. M.
3 Roldán, Rafael
2 Roldán, Raquel
1 Roldán, Rosa
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