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5 p, 1.3 MB Multilevel recording in Bi-deficient Pt/BFO/SRO heterostructures based on ferroelectric resistive switching targeting high-density information storage in nonvolatile memories / Jiménez Jiménez, David (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Miranda, Enrique Alberto (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Tsurumaki-Fukuchi, Atsushi (National Institute of Advanced Industrial Science and Technology (Ibaraki, Japó)) ; Yamada, Hiroyuki (National Institute of Advanced Industrial Science and Technology (Ibaraki, Japó)) ; Sawa, Akihito (National Institute of Advanced Industrial Science and Technology (Ibaraki, Japó)) ; American Institute of Physics
We demonstrate the feasibility of multilevel recording in Pt/Bi1-δFeO3/SrRuO3 capacitors using the ferroelectric resistive switching phenomenon exhibited by the Pt/Bi1−δFeO3 interface. A tunable population of up and down ferroelectric domains able to modulate the Schottky barrier height at the Pt/Bi1−δFeO3 interface can be achieved by means of either a collection of SET/RESET voltages or current compliances. [...]
2013 - 10.1063/1.4855155
Applied physics letters, Vol. 103, Issue 26 (December 2013) , p. 263502/1-263502/4  

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1 Sawa, A.
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