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10 p, 4.7 MB Phonon engineering in isotopically disordered silicon nanowires / Mukherjee, S. (Polytechnique Montréal. Département de génie physique) ; Givan, U. (Max-Planck-Institut für Mikrostrukturphysik) ; Senz, S. (Max-Planck-Institut für Mikrostrukturphysik) ; Bergeron, A. (Polytechnique Montréal. Département de génie physiquel) ; Francoeur, S. (Polytechnique Montréal. Département de génie physique) ; De La Mata, Maria (Institut Català de Nanociència i Nanotecnologia) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Sekiguchi, T. (Keio University. Department of Applied Physics and Physico-Informatics) ; Itoh, K.M. (Keio University. Department of Applied Physics and Physico-Informatics) ; Isheim, D. (Northwestern University. Department of Materials Science and Engineering) ; Seidman, D.N. (Northwestern University. Department of Materials Science and Engineering) ; Moutanabbir, O. (Polytechnique Montréal. Département de génie physique)
The introduction of stable isotopes in the fabrication of semiconductor nanowires provides an additional degree of freedom to manipulate their basic properties, design an entirely new class of devices, and highlight subtle but important nanoscale and quantum phenomena. [...]
2015 - 10.1021/acs.nanolett.5b00708
Nano letters, Vol. 15, issue 6 (Oct. 2015) , p. 3885-3893  

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