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4 p, 279.2 KB STM-induced hydrogen desorption via a hole resonance / Stokbro, K. (Danmarks Tekniske Universitet. Mikroelektronik Centret) ; Thirstrup, C. (Surface and Interface Laboratory, RIKEN (Japó)) ; Sakurai, M. (Surface and Interface Laboratory, RIKEN (Japó)) ; Quaade, U. (Danmarks Tekniske Universitet. Mikroelektronik Centret) ; Yu-Kuang Hu, Ben (Danmarks Tekniske Universitet. Mikroelektronik Centret) ; Pérez Murano, Francesc (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Grey, F. (Danmarks Tekniske Universitet. Mikroelektronik Centret) ; American Physical Society
We report STM-induced desorption of H from Si(100)-H(2×1) at negative sample bias. The desorption rate exhibits a power-law dependence on current and a maximum desorption rate at −7V. The desorption is explained by vibrational heating of H due to inelastic scattering of tunneling holes with the Si-H 5σ hole resonance. [...]
1998 - 10.1103/PhysRevLett.80.2618
Physical review letters, Vol. 80, Issue 12 (March 1998) , p. 2618-2621  

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