Resultados globales: 2 registros encontrados en 0.02 segundos.
Artículos, Encontrados 2 registros
Artículos Encontrados 2 registros  
19 p, 8.9 MB Uniformly coated highly porous graphene/MnO2 foams for flexible asymmetric supercapacitors / Drieschner, Simon (Technische Universität München) ; Seckendorff, Maximilian Von (Technische Universität München) ; Del Corro Garcia, Elena (Institut Català de Nanociència i Nanotecnologia) ; Wohlketzetter, Jörg (Technische Universität München) ; Blaschke, Benno M. (Technische Universität München) ; Stutzmann, Martin (Technische Universität München) ; Garrido Ariza, José A. (Institut Català de Nanociència i Nanotecnologia)
Supercapacitors are called to play a prominent role in the newly emerging markets of electric vehicles, flexible displays and sensors, and wearable electronics. In order to compete with current battery technology, supercapacitors have to be designed with highly conductive current collectors exhibiting high surface area per unit volume and uniformly coated with pseudocapacitive materials, which is crucial to boost the energy density while maintaining a high power density. [...]
2018 - 10.1088/1361-6528/aab4c2
Nanotechnology, Vol. 29, Núm. 22 (April 2018) , art. 225402  
8 p, 9.3 MB Position-controlled growth of GaN nanowires and nanotubes on diamond by molecular beam epitaxy / Schuster, Fabian (Walter Schottky Institut, Physics Department, Technische Universität München) ; Hetzl, Martin (Technische Universität München. Walter Schottky Institute) ; Weiszer, Saskia (Technische Universität München. Walter Schottky Institute) ; Garrido Ariza, José A. (Technische Universität München. Walter Schottky Institute) ; De La Mata, Maria (Institut de Ciència de Materials de Barcelona (ICMAB-CSIC)) ; Magén, César (Universidad de Zaragoza. Instituto de Nanociencia de Aragón) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Stutzmann, Martin (Technische Universität München. Walter Schottky Institute) ; ALBA Laboratori de Llum de Sincrotró
In this work the position-controlled growth of GaN nanowires (NWs) on diamond by means of molecular beam epitaxy is investigated. In terms of growth, diamond can be seen as a model substrate, providing information of systematic relevance also for other substrates. [...]
2015 - 10.1021/nl504446r
Nano letters, Vol. 15, issue 3 (Nov. 2015) , p. 1773-1779  

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