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Articles 2 records found  
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22 p, 841.0 KB Template-Assisted Scalable Nanowire Networks / Friedl, Martin (École Polytechnique Fédérale de Lausanne) ; Cerveny, Kris (University of Basel. Department of Physics) ; Weigele, Pirmin (University of Basel. Department of Physics) ; Tütüncüoglu, Gözde (École Polytechnique Fédérale de Lausanne) ; Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia) ; Huang, Chunyi (Northwestern University. Department of Materials Science and Engineering) ; Patlatiuk, Taras (University of Basel. Department of Physics) ; Potts, Heidi A. (École Polytechnique Fédérale de Lausanne) ; Sun, Zhiyuan (Northwestern University. Department of Materials Science and Engineering) ; Hill, Megan O. (Northwestern University. Department of Materials Science and Engineering) ; Güniat, Lucas (École Polytechnique Fédérale de Lausanne) ; Kim, Wonjong (École Polytechnique Fédérale de Lausanne) ; Zamani, Mahdi (École Polytechnique Fédérale de Lausanne) ; Dubrovskii, Vladimir G. (ITMO University) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Lauhon, Lincoln J. (Northwestern University. Department of Materials Science and Engineering) ; Zumbühl, Dominik M. (University of Basel. Department of Physics) ; Fontcuberta i Morral, Anna (École Polytechnique Fédérale de Lausanne)
Topological qubits based on Majorana Fermions have the potential to revolutionize the emerging field of quantum computing by making information processing significantly more robust to decoherence. Nanowires are a promising medium for hosting these kinds of qubits, though branched nanowires are needed to perform qubit manipulations. [...]
2018 - 10.1021/acs.nanolett.8b00554
Nano letters, Vol. 18, Issue 4 (April 2018) , p. 2666-2671
2 documents
2.
21 p, 1.0 MB High yield of gaas nanowire arrays on si mediated by the pinning and contact angle of Ga / Russo-Averchi, Eleonora (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; Vukajlovic Plestina, Jelena (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; Tütüncüoglu, Gözde (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; Matteini, Federico (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; Dalmau-Mallorquí, Anna (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; De La Mata, Maria (Institut de Ciència de Materials de Barcelona) ; Rüffer, Daniel (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; Potts, Heidi A. (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Conesa-Boj, Sonia (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; Fontcuberta i Morral, Anna (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs)
GaAs nanowire arrays on silicon offer great perspectives in the optoelectronics and solar cell industry. To fulfill this potential, gold-free growth in predetermined positions should be achieved. Ga-assisted growth of GaAs nanowires in the form of array has been shown to be challenging and difficult to reproduce. [...]
2015 - 10.1021/nl504437v
Nano letters, Vol. 15, issue 5 (May 2015) , p. 2869-2874  

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3 Tutuncuoglu, Gozde
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