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11 p, 967.1 KB |
Bottom-up synthesis of multifunctional nanoporous graphene
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Moreno Sierra, César (Institut Català de Nanociència i Nanotecnologia) ;
Vilas Varela, Manuel (Universidade de Santiago de Compostela. Departamento de Química Orgánica) ;
Kretz, Bernhard (Donostia International Physics Center) ;
Garcia Lekue, Aran (Basque Foundation for Science) ;
Costache, Marius V. (Institut Català de Nanociència i Nanotecnologia) ;
Paradinas Aranjuelo, Marcos (Institut Català de Nanociència i Nanotecnologia) ;
Panighel, Mirko (Institut Català de Nanociència i Nanotecnologia) ;
Ceballos, Gustavo (Institut Català de Nanociència i Nanotecnologia) ;
Valenzuela, Sergio O. (Institut Català de Nanociència i Nanotecnologia) ;
Peña, Diego (Universidade de Santiago de Compostela. Departamento de Química Orgánica) ;
Mugarza, Aitor (Institut Català de Nanociència i Nanotecnologia)
Nanosize pores can turn semimetallic graphene into a semiconductor and, from being impermeable, into the most efficient molecular-sieve membrane. However, scaling the pores down to the nanometer, while fulfilling the tight structural constraints imposed by applications, represents an enormous challenge for present top-down strategies. [...]
2018 -  10.1126/science.aar2009
Science, Vol. 360, Issue 6385 (April 2018) , p. 199-203
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7 p, 628.4 KB |
Determination of the spin-lifetime anisotropy in graphene using oblique spin precession
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Raes, Bart (Institut Català de Nanociència i Nanotecnologia) ;
Scheerder, Jeroen E. (KU Leuven. Department of Physics and Astronomy) ;
Costache, Marius V. (Institut Català de Nanociència i Nanotecnologia) ;
Bonell, Frédéric (Institut Català de Nanociència i Nanotecnologia) ;
Sierra, Juan F. (Institut Català de Nanociència i Nanotecnologia) ;
Cuppens, Jo (Institut Català de Nanociència i Nanotecnologia) ;
Van De Vondel, Joris (KU Leuven. Department of Physics and Astronomy) ;
Valenzuela, Sergio O. (Institut Català de Nanociència i Nanotecnologia)
We determine the spin-lifetime anisotropy of spin-polarized carriers in graphene. In contrast to prior approaches, our method does not require large out-of-plane magnetic fields and thus it is reliable for both low-and high-carrier densities. [...]
2016 - 10.1038/ncomms11444
Nature communications, Vol. 7 (May 2016) , art. 11444
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34 p, 5.3 MB |
The 2017 Magnetism Roadmap
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Sander, D. (Max Planck Institute of Microstructure Physics (Germany)) ;
Valenzuela, Sergio O. (Institut Català de Nanociència i Nanotecnologia) ;
Makarov, D. (Helmholtz-Zentrum Dresden Rossendorf (Germany)) ;
Marrows, C.H. (University of Leeds. School of Physics and Astronomy (United Kingdom)) ;
Fullerton, E.E. (University of California. Center for Memory and Recording Research (EUA)) ;
Fischer, P. (University of California. Physics Department (EUA)) ;
McCord, J. (Kiel University. Institute for Materials Science (Germany)) ;
Vavassori, P. (IKERBASQUE. Basque Foundation for Science (España)) ;
Mangin, S. (Université de Lorraine. Institut Jean Lamour (France)) ;
Pirro, P. (Technische Universität Kaiserslautern. Fachbereich Physik and Landesforschungszentrum (Germany)) ;
Hillebrands, B. (Technische Universität Kaiserslautern. Fachbereich Physik and Landesforschungszentrum (Germany)) ;
Kent, A.D. (New York University. Department of Physics (EUA)) ;
Jungwirth, T. (Czech Academy of Sciences. Institute of Physics (Czech Republic)) ;
Gutfleisch, O. (TU Darmstadt. Material Science (Germany)) ;
Kim, C.G. (DGIST. Department of Emerging Materials Science (Republic of Korea)) ;
Berger, A. (CIC NanoGUNE (España))
Building upon the success and relevance of the 2014 Magnetism Roadmap, this 2017 Magnetism Roadmap edition follows a similar general layout, even if its focus is naturally shifted, and a different group of experts and, thus, viewpoints are being collected and presented. [...]
2017 - 10.1088/1361-6463/aa81a1
Journal of physics D: applied physics, Vol. 50, Issue 36 (September 2017) , art. 363001
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7 p, 2.3 MB |
Spin hall effect and origins of nonlocal Resistance in adatom-decorated graphene
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Dinh, Van Tuan (Institut Català de Nanociència i Nanotecnologia) ;
Marmolejo Tejada, J.M. (University of Delaware. Department of Physics and Astronomy) ;
Waintal, X. (Université Grenoble Alpes) ;
Nikolić, B.K. (University of Delaware. Department of Physics and Astronomy) ;
Valenzuela, Sergio O. (Institut Català de Nanociència i Nanotecnologia) ;
Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
Recent experiments reporting an unexpectedly large spin Hall effect (SHE) in graphene decorated with adatoms have raised a fierce controversy. We apply numerically exact Kubo and Landauer-Büttiker formulas to realistic models of gold-decorated disordered graphene (including adatom clustering) to obtain the spin Hall conductivity and spin Hall angle, as well as the nonlocal resistance as a quantity accessible to experiments. [...]
2016 - 10.1103/PhysRevLett.117.176602
Physical review letters, Vol. 117, issue 17 (Oct. 2016) , p. 176602
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26 p, 1.8 MB |
Growth of Twin-Free and Low-Doped Topological Insulators on BaF2(111)
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Bonell, Frédéric (Institut Català de Nanociència i Nanotecnologia) ;
Cuxart, Marc G. (Institut Català de Nanociència i Nanotecnologia) ;
Song, Kenan (Institut Català de Nanociència i Nanotecnologia) ;
Robles, Roberto (Institut Català de Nanociència i Nanotecnologia) ;
Ordejón Rontomé, Pablo (Institut Català de Nanociència i Nanotecnologia) ;
Roche, Stephan (Institut Català de Nanociència i Nanotecnologia) ;
Mugarza, Aitor (Institut Català de Nanociència i Nanotecnologia) ;
Valenzuela, Sergio O. (Institut Català de Nanociència i Nanotecnologia) ;
Universitat Autònoma de Barcelona
We demonstrate the growth of twin-free BiTe and SbTe topological insulators by molecular beam epitaxy and a sizable reduction of the twin density in BiSe on lattice-matched BaF(111) substrates. Using X-ray diffraction, electron diffraction and atomic force microscopy, we systematically investigate the parameters influencing the formation of twin domains and the morphology of the films, and show that Se- and Te-based alloys differ by their growth mechanism. [...]
2017 - 10.1021/acs.cgd.7b00525
Crystal Growth and Design, Vol. 17, Núm. 9 (September 2017) , p. 4655-4660
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6 p, 708.7 KB |
Impact of the in situ rise in hydrogen partial pressure on graphene shape evolution during CVD growth of graphene
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Gebeyehu, Zewdu M. (Institut Català de Nanociència i Nanotecnologia) ;
Costache, Marius V. (Institut Català de Nanociència i Nanotecnologia) ;
Sotomayor Torres, Clivia M. (Institut Català de Nanociència i Nanotecnologia) ;
Esplandiu Egido, Maria José (Institut Català de Nanociència i Nanotecnologia) ;
Valenzuela, Sergio O. (Institut Català de Nanociència i Nanotecnologia) ;
Arrighi, Aloïs (Institut Català de Nanociència i Nanotecnologia)
Growth to etching transformation following in situ rise in hydrogen with time results in dendritic graphene. Exposing graphene to a hydrogen post-etching process yields dendritic graphene shapes. Here, we demonstrate that similar dendritic structures can be achieved at long growth times without adding hydrogen externally. [...]
2018 - 10.1039/c7ra13169k
Rsc Advances, Vol. 8, issue 15 (2018) , p. 8234-8239
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15 p, 378.5 KB |
Pseudospin-driven spin relaxation mechanism in graphene
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Dinh, Van Tuan (Institut Català de Nanociència i Nanotecnologia) ;
Ortmann, Frank (Institut Català de Nanociència i Nanotecnologia) ;
Soriano, David (Institut Català de Nanociència i Nanotecnologia) ;
Valenzuela, Sergio O. (Institut Català de Nanociència i Nanotecnologia) ;
Roche, Stephan (Institut Català de Nanociència i Nanotecnologia) ;
Universitat Autònoma de Barcelona.
Departament de Física.
The prospect of transporting spin information over long distances in graphene, possible because of its small intrinsic spin-orbit coupling (SOC) and vanishing hyperfine interaction, has stimulated intense research exploring spintronics applications. [...]
2014 - 10.1038/nphys3083
Nature Physics, Vol. 10, Núm. 11 (September 2014) , p. 857-863
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