Resultados globales: 2 registros encontrados en 0.02 segundos.
Artículos, Encontrados 2 registros
Artículos Encontrados 2 registros  
1.
13 p, 8.2 MB The Role of polarity in nonplanar semiconductor nanostructures / De La Mata, Maria (Institut Català de Nanociència i Nanotecnologia) ; Zamani, Reza (École Polytechnique Fédérale de Lausanne. Interdisciplinary Center for Electron Microscopy) ; Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia) ; Eickhoff, Martin (University of Bremen. Institut für Festkörperphysik) ; Xiong, Qihua (Nanyang Technological University. School of Physical and Mathematical Sciences) ; Fontcuberta i Morral, Anna (École Polytechnique Fédérale de Lausanne) ; Caroff, Philippe (Delft University of Technology) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia)
The lack of mirror symmetry in binary semiconductor compounds turns them into polar materials, where two opposite orientations of the same crystallographic direction are possible. Interestingly, their physical properties (e. [...]
2019 - 10.1021/acs.nanolett.9b00459
Nano letters, Vol. 19, issue 6 (June 2019) , p. 3396-3408  
2.
9 p, 3.3 MB High-yield synthesis and optical properties of g-C₃N₄ / Yuan, Yanwen (Nanyang Technological University. Division of Physics and Applied Physics) ; Zhang, Lulu (Nanyang Technological University. Division of Physics and Applied Physics) ; Xing, Jun (Nanyang Technological University. Division of Physics and Applied Physics) ; Utama, M. Iqbal Bakti (Nanyang Technological University. Division of Physics and Applied Physics) ; Lu, Xin (Nanyang Technological University. Division of Physics and Applied Physics) ; Du, Kezhao (Nanyang Technological University. Division of Physics and Applied Physics) ; Li, Yongmei (Nanyang Technological University. School of Materials Science and Engineering) ; Hu, Xiao (Nanyang Technological University. School of Materials Science and Engineering) ; Wang, Shijie (Institute of Materials Research & Engineering, Agency for Science, Technologies and Research (Singapore)) ; Genç, Aziz (Institut Català de Nanociència i Nanotecnologia) ; Dunin-Borkowski, Rafal (Forschungszentrum Jülich - Peter Grünberg Institut) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Xiong, Qihua (Nanyang Technological University. Division of Physics and Applied Physics)
Graphitic carbon nitride (g-C₃N₄), a metal-free semiconductor with a band gap of 2. 7 eV, has received considerable attention owing to its fascinating photocatalytic performances under visible-light. [...]
2015 - 10.1039/c5nr02905h
Nanoscale, Vol. 7 Núm. 29 (july 2015) , p. 12343-12350  

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