Resultats globals: 23 registres trobats en 0.05 segons.
Articles, 23 registres trobats
Articles 23 registres trobats  1 - 10següentfinal  anar al registre:
1.
19 p, 606.3 KB Dually actuated atomic force microscope with miniaturized magnetic bead-actuators for single-molecule force measurements / Sevim, Semih (Bogazici University. Department of Electrical and Electronics Engineering) ; Ozer, Sevil (Bogazici University. Department of Electrical and Electronics Engineering) ; Feng, Luying (Bogazici University. Department of Electrical and Electronics Engineering) ; Wurzel, Joel (University of Würzburg. Institute of Pharmacy and Food Chemistry) ; Fakhraee, Arielle (Aeon Scientific AG) ; Shamsudhin, Naveen (ETH Zurich. Institute of Robotics and Intelligent Systems) ; Jang, Bumjin (ETH Zurich. Institute of Robotics and Intelligent Systems) ; Alcantara, Carlos (ETH Zurich. Institute of Robotics and Intelligent Systems) ; Ergeneman, Olgaç (ETH Zurich. Institute of Robotics and Intelligent Systems) ; Pellicer Vilà, Eva M. (Eva Maria) (Universitat Autònoma de Barcelona. Departament de Física) ; Sort Viñas, Jordi (Institució Catalana de Recerca i Estudis Avançats) ; Lühmann, Tessa (University of Würzburg. Institute of Pharmacy and Food Chemistry) ; Pané, Salvador (ETH Zurich. Institute of Robotics and Intelligent Systems) ; Nelson, Bradley J. (ETH Zurich. Institute of Robotics and Intelligent Systems) ; Torun, Hamdi (Bogazici University. Department of Electrical and Electronics Engineering)
We report for the first time on a novel Atomic Force Microscopy (AFM) technique with dual actuation capabilities using both piezo and magnetic bead actuation for advanced single-molecule force spectroscopy experiments. [...]
2016 - 10.1039/c6nh00134c
Nanoscale Horizons, Vol. 1, Issue 6 (November 2016) , p. 488-495  
2.
17 p, 2.7 MB Conductive-AFM topography and current maps simulator for the study of polycrystalline high-k dielectrics / Couso, C. (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Porti i Pujal, Marc (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Martín Martínez, Javier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Iglesias, V. (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Aymerich Humet, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
In this work, a simulator of conductive atomic force microscopy (C-AFM) was developed to reproduce topography and current maps. In order to test the results, the authors used the simulator to investigate the influence of the C-AFM tip on topography measurements of polycrystalline high-k dielectrics, and compared the results with experimental data. [...]
2015 - 10.1116/1.4915328
Journal of Vaccuum Science and Technology B, Vol. 33 No. 3 (May-June 2015) , p031801/1-031801/6  
3.
14 p, 5.7 MB Scanning probe microscopies for analytical studies at the nanometer scale / Esplandiu Egido, Maria José (Universitat Autònoma de Barcelona. Grup de Recerca de Sensors i Biosensors)
The scanning probe microscopies (SPM) have transformed the way of studying the structure and the properties of a wide variety of systems. Without doubt, they have exerted a pivotal role in many scientific disciplines like physics, chemistry, biology and engineering and have helped to give birth to novel fields such as the nanoscience and nanotechnology. [...]
Les microscòpies locals de rastreig han transformat la manera d'estudiar l'estructura i les propietats d'una gran varietat de sistemes. Sens dubte, han tingut un paper essencial en moltes disciplines, com ara la física, la química, la biologia i l'enginyeria, i han contribuït al naixement de nous camps, com ara la nanociència i la nanotecnologia. [...]

2005
Contributions to science, Vol. 3, Núm. 1 (2005) , p. 33-46  
4.
5 p, 1.9 MB Gate current analysis of AlGaN/GaN on silicon heterojunction transistors at the nanoscale / Fontsere Recuenco, Abel (Centro Nacional de Microelectrónica) ; Pérez Tomàs, Amador (Centro Nacional de Microelectrónica) ; Placidi, Marcel (Centro Nacional de Microelectrónica) ; Aguiló Llobet, Jordi (Centro Nacional de Microelectrónica) ; Baron, N. (Centre national de la recherche scientifique (França)) ; Chenot, S. (Centre national de la recherche scientifique (França)) ; Cordier, Y. (Centre national de la recherche scientifique (França)) ; Moreno, J. C. (Centre national de la recherche scientifique (França)) ; Iglesias Santiso, Vanessa (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Porti i Pujal, Marc (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Bayerl, Albin (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Lanza Martínez, Mario (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
The gate leakage current of AlGaN/GaN (on silicon)high electron mobility transistor(HEMT) is investigated at the micro and nanoscale. The gate current dependence (25–310 °C) on the temperature is used to identify the potential conduction mechanisms, as trap assisted tunneling or field emission. [...]
2012 - 10.1063/1.4748115
Applied Physics Letters, Vol. 101, Issue 9 (August 2012) , p. 093505/1-093505/4  
5.
4 p, 325.4 KB Using exchange bias to extend the temperature range of square loop behavior in [Pt/Co] multilayers with perpendicular anisotropy / Sort Viñas, Jordi (Universitat Autònoma de Barcelona. Departament de Física) ; Suriñach, Santiago (Suriñach Cornet) (Universitat Autònoma de Barcelona. Departament de Física)
The temperature dependence of the magnetic properties of [Pt/Co]multilayers (ML), exhibiting perpendicular anisotropy, with and without exchange biasing with an antiferromagnet(AFM) has been investigated. [...]
2005 - 10.1063/1.2139840
Applied Physics Letters, Vol. 87, Issue 24 (December 2005) , p. 242504/1-242504/3  
6.
4 p, 503.7 KB Surface behavior of La2/3Ca1/3MnO3 epitaxial thin films / Abad Muñoz, Llibertat (Institut de Ciència de Materials de Barcelona) ; Martínez Perea, Benjamín (Institut de Ciència de Materials de Barcelona) ; Balcells Argemí, Lluís (Institut de Ciència de Materials de Barcelona) ; American Physical Society
The role of the surface layers in La2/3Ca1/3MnO3 magnetic oxide epitaxialthin films is analyzed. We show that the topmost layers do play a very relevant role on the transport properties acting as an insulating barrier. [...]
2005 - 10.1063/1.2133925
Applied Physics Letters, Vol. 87, Issue 21 (November 2005) , p. 212502  
7.
4 p, 346.4 KB Large exchange bias and its connection to interface structure in FeF2–Fe bilayers / Nogués i Sanmiquel, Josep (University of California, San Diego. Department of Physics) ; Lederman, D. (University of California, San Diego. Department of Physics) ; Morán, T. J. (University of California, San Diego. Department of Physics) ; Schuller, Ivan K. (University of California, San Diego. Department of Physics) ; Rao, K. V. (Kungl. Tekniska högskolan. Department of Condensed Matter Physics) ; American Physical Society
Large exchange bias effects (ΔE 1. 1 erg/cm2) were observed in antiferromagnetic (FeF2)–ferromagnetic (Fe) bilayers grown on MgO. The FeF2 grows along the spin‐compensated (110) direction. The FeF2–Fe interface roughness was characterized using specular and diffuse x‐ray diffraction and atomic force microscopy. [...]
1996 - 10.1063/1.115819
Applied Physics Letters, Vol. 68, Issue 22 (May 1996) , p. 3186-3188  
8.
4 p, 414.9 KB Local oxidation of silicon surfaces by dynamic force microscopy : nanofabrication and water bridge formation / García, Ricardo (Instituto de Microelectronica de Madrid) ; Calleja, M. (Instituto de Microelectronica de Madrid) ; Pérez Murano, Francesc (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; American Physical Society
Local oxidation of siliconsurfaces by atomic force microscopy is a very promising lithographic approach at nanometer scale. Here, we study the reproducibility, voltage dependence, and kinetics when the oxidation is performed by dynamic force microscopy modes. [...]
1998 - 10.1063/1.121340
Applied Physics Letters, Vol. 72, Issue 18 (May 1998) , p. 2295-2297  
9.
4 p, 370.6 KB Combined laser and atomic force microscope lithography on aluminum : mask fabrication for nanoelectromechanical systems / Abadal Berini, Gabriel (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Boisen, A. (Technical University of Denmark. Mikroelektronik Centret) ; Davis, Z. J. (Technical University of Denmark. Mikroelektronik Centret) ; Hansen, O. (Technical University of Denmark. Mikroelektronik Centret) ; Grey, F. (Technical University of Denmark. Mikroelektronik Centret) ; American Physical Society
A direct-write laser system and an atomic force microscope(AFM) are combined to modify thin layers of aluminum on an oxidizedsilicon substrate, in order to fabricate conducting and robust etch masks with submicron features. [...]
1999 - 10.1063/1.124106
Applied Physics Letters, Vol. 74, Issue 21 (March 1999) , p. 3206-3208  
10.
4 p, 497.0 KB Magnetic domain and domain-wall imaging of submicron Co dots by probing the magnetostrictive response using atomic force microscopy / Wittborn, J. (Kungl. Tekniska högskolan. Department of Materials Science) ; Rao, K. V. (Kungl. Tekniska högskolan. Department of Materials Science) ; Nogués i Sanmiquel, Josep (Universitat Autònoma de Barcelona. Departament de Física) ; Schuller, Ivan K. (University of California, San Diego. Department of Physics) ; American Physical Society
An approach to image the domains and domain walls of small ferromagnetic entities using atomic force microscopy(AFM), with a nonmagnetic AFM probe, has been developed. Exciting the sample in an external acmagnetic field, the distribution of magnetostrictive response at the surface is detected. [...]
2000 - 10.1063/1.126520
Applied Physics Letters, Vol. 76, Issue 20 (May 2000) , p. 2931-2933  

Articles : 23 registres trobats   1 - 10següentfinal  anar al registre:
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