Resultats globals: 16 registres trobats en 0.02 segons.
Articles, 16 registres trobats
Articles 16 registres trobats  1 - 10següent  anar al registre:
1.
5 p, 691.3 KB DC characterization and fast small-signal parameter extraction of organic thin film transistors with different geometries / Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Crespo-Yepes, Albert (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Rodríguez Martínez, Rosana (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Arnal, August (Institut de Microelectrònica de Barcelona) ; Ramon, Eloi (Institut de Microelectrònica de Barcelona) ; Terés Terés, Lluís (Institut de Microelectrònica de Barcelona)
Organic Devices offer low-cost manufacturing and better flexibility, sustainability and solution-processability than their Si-based MOS counterparts, which make them suitable for new applications where those characteristics are an advantage. [...]
2020 - 10.1109/LED.2020.3021236
IEEE electron device letters, Vol. 41, Issue 10 (October 2020) , p. 1512-1515  
2.
26 p, 1.2 MB Unraveling the key relationship between perovskite capacitive memory, long timescale cooperative relaxation phenomena, and anomalous J-V hysteresis / Hernández-Balaguera, Enrique (Universidad Rey Juan Carlos. Escuela Superior de Ciencias Experimentales y Tecnología) ; Del Pozo, Gonzalo (Universidad Rey Juan Carlos. Escuela Superior de Ciencias Experimentales y Tecnología) ; Arredondo, Belén (Universidad Rey Juan Carlos. Escuela Superior de Ciencias Experimentales y Tecnología) ; Romero, Beatriz (Universidad Rey Juan Carlos. Escuela Superior de Ciencias Experimentales y Tecnología) ; Pereyra, Carlos (Institut Català de Nanociència i Nanotecnologia) ; Xie, Haibing (Institut Català de Nanociència i Nanotecnologia) ; Lira-Cantu, Monica (Institut Català de Nanociència i Nanotecnologia)
Capacitive response at long time scales seems to remain an elusive feature in the analysis of the electrical properties of perovskite-based solar cells. It belongs to one of the critical anomalous effects that arises from the characteristic phenomenology of this type of emerging photovoltaic devices. [...]
2021 - 10.1002/solr.202000707
Solar RRL, Vol. 5, issue 4 (April 2021) , art. 2000707  
3.
12 p, 4.7 MB Enhancement of the supercapacitive properties of laser deposited graphene-based electrodes through carbon nanotube loading and nitrogen doping / Pérez Del Pino, Ángel (Institut de Ciència de Materials de Barcelona) ; Rodríguez López, Marta (Institut de Ciència de Materials de Barcelona) ; Ramadan, Mohamed Ahmed (Helwan University) ; García Lebière, Pablo (Institut de Ciència de Materials de Barcelona) ; Logofatu, Constantin (National Institute for Materials Physics) ; Martínez-Rovira, Immaculada (ALBA Laboratori de Llum de Sincrotró) ; Yousef, Ibraheem (ALBA Laboratori de Llum de Sincrotró) ; Gyorgy, Eniko (Institut de Ciència de Materials de Barcelona)
Several technological routes are being investigated for improving the energy storage capability and power delivery of electrochemical capacitors. In this work, ternary hybrid electrodes composed of conducting graphene/reduced graphene oxide (rGO), which store charge mainly through electric double-layer mechanisms, covered by NiO nanostructures, for adding pseudocapacitance, were fabricated through a matrix assisted pulsed laser evaporation technique. [...]
2019 - 10.1039/c9cp04237g
Physical chemistry chemical physics, Vol. 21, Issue 45 (December 2019) , p. 25175-25186  
4.
7 p, 1.6 MB Large-signal model of 2DFETs : compact modeling of terminal charges and intrinsic capacitances / Pasadas, Francisco (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Marin, Enrique G. (Universidad de Granada. Departamento de Electrónica y Tecnología de Computadores) ; Toral-Lopez, Alejandro (Universidad de Granada. Departamento de Electrónica y Tecnología de Computadores) ; Ruiz, Francisco G. (Universidad de Granada. Departamento de Electrónica y Tecnología de Computadores) ; Godoy Medina, Andres (Universidad de Granada. Departamento de Electrónica y Tecnología de Computadores) ; Park, Saungeun (The University of Texas. Department of Electrical and Computer Engineering (USA)) ; Akinwande, Deji (The University of Texas. Department of Electrical and Computer Engineering (USA)) ; Jiménez Jiménez, David (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
We present a physics-based circuit-compatible model for double-gated two-dimensional semiconductor-based field-effect transistors, which provides explicit expressions for the drain current, terminal charges, and intrinsic capacitances. [...]
2019 - 10.1038/s41699-019-0130-6
npj 2D Materials and Applications, Vol. 3 (December 2019) , art. 47  
5.
164 p, 6.1 MB Towards flexible solid-state supercapacitors for smart and wearable electronics / Dubal, Deepak P. (Institut Català de Nanociència i Nanotecnologia) ; Chodankar, Nilesh R. (Chonnam National University) ; Kim, Do-Heyoung (Chonnam National University) ; Gómez Romero, Pedro 1959- (Institut Català de Nanociència i Nanotecnologia)
Flexible solid-state supercapacitors (FSSCs) are frontrunners in energy storage device technology and have attracted extensive attention owing to recent significant breakthroughs in modern wearable electronics. [...]
2018 - 10.1039/c7cs00505a
Chemical Society Reviews, Vol. 47, Issue 6 (March 2018) , p. 2065-2129  
6.
34 p, 4.0 MB Gate electrostatics and quantum capacitance in ballistic graphene devices / Caridad, José M. (Danmarks Tekniske Universitet. Center for Nanostructured Graphene) ; Power, Stephen R. (Institut Català de Nanociència i Nanotecnologia) ; Shylau, Artsem A. (Danmarks Tekniske Universitet. Center for Nanostructured Graphene) ; Gammelgaard, Lene (Danmarks Tekniske Universitet. Center for Nanostructured Graphene) ; Jauho, Antti-Pekka (Danmarks Tekniske Universitet. Center for Nanostructured Graphene) ; Bøggild, Peter (Danmarks Tekniske Universitet. Center for Nanostructured Graphene)
We experimentally investigate the charge induction mechanism across gated, narrow, ballistic graphene devices with different degrees of edge disorder. By using magnetoconductance measurements as the probing technique, we demonstrate that devices with large edge disorder exhibit a nearly homogeneous capacitance profile across the device channel, close to the case of an infinitely large graphene sheet. [...]
2019 - 10.1103/PhysRevB.99.195408
Physical review B, Vol. 99, issue 19 (May 2019) , art. 195408  
7.
9 p, 1.8 MB On the persistence of polar domains in ultrathin ferroelectric capacitors / Zubko, Pavlo (University College London) ; Lu, Haidong (University of Nebraska-Lincoln) ; Bark, C.W. (University of Wisconsin-Madison. Department of Materials Science and Engineering) ; Martí Rovirosa, Xavier (Academy of Sciences of the Czech Republic) ; Santiso, José (Institut Català de Nanociència i Nanotecnologia) ; Eom, C.B. (University of Wisconsin-Madison. Department of Materials Science and Engineering) ; Catalan, Gustau (Institut Català de Nanociència i Nanotecnologia) ; Gruverman, A. (University of Nebraska-Lincoln. Department of Physics and Astronomy)
The instability of ferroelectric ordering in ultra-thin films is one of the most important fundamental issues pertaining realization of a number of electronic devices with enhanced functionality, such as ferroelectric and multiferroic tunnel junctions or ferroelectric field effect transistors. [...]
2017 - 10.1088/1361-648X/aa73c3
Journal of Physics Condensed Matter, Vol. 29, Núm. 28 (July 2017) , art. 284001  
8.
7 p, 921.0 KB Large-signal model of graphene field-effect transistors. Part II : circuit performance benchmarking / Pasadas, Francisco (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Jiménez Jiménez, David (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
This paper presents a circuit performance benchmarking using the large-signal model of graphene field effect transistor reported in Part I of this two-part paper. To test the model, it has been implemented in a circuit simulator. [...]
2016 - 10.1109/TED.2016.2563464
IEEE transactions on electron devices, Vol. 63, Issue 7 (July 2016) , p. 2942 - 2947  
9.
6 p, 1.8 MB Large-signal model of graphene field-effect transistors. Part I : compact modeling of GFET intrinsic capacitances / Pasadas, Francisco (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Jiménez Jiménez, David (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
We present a circuit-compatible compact model of the intrinsic capacitances of graphene field-effect transistors (GFETs). Together with a compact drain current model, a large-signal model of GFETs is developed combining both models as a tool for simulating the electrical behavior of graphene-based integrated circuits, dealing with the DC, transient behavior, and frequency response of the circuit. [...]
2016 - 10.1109/TED.2016.2570426
IEEE transactions on electron devices, Vol. 63 Issue 7 (July 2016) , p. 2936 - 2941  
10.
4 p, 355.8 KB Ultrasensitive mass sensor fully integrated with complementary metal-oxide-semiconductor circuitry / Forsen, E. (Technical University of Denmark. Department of Micro and Nanotechnology) ; Abadal Berini, Gabriel (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Ghatnekar-Nilsson, S. (University of Lund. Solid State Physics and The Nanometer Consortium) ; Teva Meroño, Jordi (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Verd Martorell, Jaume (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Sandberg, R. (Technical University of Denmark. Department of Micro and Nanotechnology) ; Svendsen, W. (Technical University of Denmark. Department of Micro and Nanotechnology) ; Pérez Murano, Francesc (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Esteve, Jaume (Institut de Microelectrònica de Barcelona) ; Figueras Costa, Eduardo (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Campabadal Segura, Francesca (Institut de Microelectrònica de Barcelona) ; Montelius, L. (University of Lund. Solid State Physics and The Nanometer Consortium) ; Barniol i Beumala, Núria (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Boisen, A. (Technical University of Denmark. Department of Micro and Nanotechnology) ; American Physical Society
Nanomechanical resonators have been monolithically integrated on preprocessed complementary metal-oxide-semiconductor(CMOS) chips. Fabricatedresonatorsystems have been designed to have resonance frequencies up to 1. [...]
2005 - 10.1063/1.1999838
Applied physics letters, Vol. 87, Issue 4 (July 2005) , p. 043507/1- 043507/3  

Articles : 16 registres trobats   1 - 10següent  anar al registre:
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