Results overview: Found 2 records in 0.02 seconds.
Articles, 2 records found
Articles 2 records found  
12 p, 435.8 KB Effect of the channel length on the transport characteristics of transistors based on boron-doped graphene ribbons / Marconcini, Paolo (Università di Pisa. Dipartimento di Ingegneria dell'Informazione) ; Cresti, Alessandro (Université Grenoble Alpes) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
Substitutional boron doping of devices based on graphene ribbons gives rise to a unipolar behavior, a mobility gap, and an increase of the I/I ratio of the transistor. Here we study how this effect depends on the length of the doped channel. [...]
2018 - 10.3390/ma11050667
Materials, Vol. 11, issue. 5 (April 2018) , art. 667  
5 p, 602.1 KB 3C-SiC Transistor with Ohmic Contacts Defined at Room Temperature / Li, Fan (University of Warwick) ; Sharma, Yogesh (University of Warwick) ; Walker, David (University of Warwick) ; Hindmarsh, Steven (University of Warwick) ; Jennings, Mike (University of Warwick) ; Martin, David (University of Warwick) ; Fisher, Craig (University of Warwick) ; Gammon, Peter (University of Warwick) ; Pérez Tomàs, Amador (Institut Català de Nanociència i Nanotecnologia) ; Mawby, Phil (University of Warwick)
Among all SiC polytypes, only 3C-SiC has a cubic structure and can be hetero-epitaxial grown on large area Si substrate, thus providing an alternative choice for fabricating cheap wide bandgap power devices. [...]
2016 - 10.1109/LED.2016.2593771
IEEE electron device letters, Vol. 37, Issue 9 (September 2016) , p. 1189-1192  

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