1.
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7 p, 1.0 MB |
Revealing the improved stability of amorphous boron-nitride upon carbon doping
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Kaya, Onurcan (Institut Català de Nanociència i Nanotecnologia) ;
Colombo, Luigi (The University of Texas at Dallas. Department of Materials Science and Engineering) ;
Antidormi, Aleandro (Institut Català de Nanociència i Nanotecnologia) ;
Lanza, Mario (King Abdullah University of Science and Technology. Department of Material Science and Engineering) ;
Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
We report on a large improvement of the thermal stability and mechanical properties of amorphous boron-nitride upon carbon doping. By generating versatile force fields using first-principles and machine learning simulations, we investigate the structural properties of amorphous boron-nitride with varying contents of carbon (from a few percent to 40 at%). [...]
2022 - 10.1039/d2nh00520d
Nanoscale horizons, Vol. 8, Issue 3 (March 2022) , p. 361-367
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2.
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7 p, 2.6 MB |
A First Evaluation of Thick Oxide 3C-SiC MOS Capacitors Reliability
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Li, Fan (University of Warwick) ;
Mawby, Philip A. (University of Warwick) ;
Song, Qiu (University of Warwick) ;
Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia) ;
Shah, Vishal (University of Warwick) ;
Sharma, Yogesh (Dynex Semiconductor Ltd.) ;
Hamilton, Dean P. (De Montfort University) ;
Fisher, Craig (University of Warwick) ;
Gammon, Peter (University of Warwick) ;
Jennings, M. R. (Swansea University)
Despite the recent advances in 3C-SiC technology, there is a lack of statistical analysis on the reliability of SiO layers on 3C-SiC, which is crucial in power MOS device developments. This article presents a comprehensive study of the medium-and long-term time-dependent dielectric breakdowns (TDDBs) of 65-nm-thick SiO layers thermally grown on a state-of-the-art 3C-SiC/Si wafer. [...]
2020 - 10.1109/TED.2019.2954911
IEEE transactions on electron devices, Vol. 67, Issue 1 (January 2020) , p. 237-242
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3.
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6 p, 4.0 MB |
Resistive switching in hafnium dioxide layers : local phenomenon at grain Boundaries
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Lanza, Mario (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Bersuker, G. (SEMATECH (Austin, Estats Units d'Amèrica)) ;
Porti i Pujal, Marc (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Aymerich Humet, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Overcoming challenges associated with implementation of resistive random access memory technology for non-volatile information storage requires identifying the material characteristics responsible for resistive switching. [...]
2012 - 10.1063/1.4765342
Applied physics letters, Vol. 101 (2012) , p. 193502-1/193502-5
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4.
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5 p, 939.8 KB |
Channel-Hot-Carrier degradation of strained MOSFETs : A device level and nanoscale combined approach
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Wu, Qian (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Porti i Pujal, Marc (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Bayerl, Albin (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Martin Martinez, Javier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Rodríguez Martínez, Rosana (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Aymerich Humet, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Simoen, E. (IMEC. Belgium.)
Strained MOSFETs with SiGe at the source/drain regions and different channel lengths have been studied at the nanoscale with a conductive atomic force microscope (CAFM) and at device level, before and after channel-hot-carrier (CHC) stress. [...]
2015 - 10.1116/1.4913950
Journal of vacuum science and technology. B, Nanotechnology & microelectronics, Vol. 33, Issue 2 (March 2015) , p. 22202
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5.
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5 p, 1.0 MB |
Temperature dependence of the resistive switching-related currents in ultra-thin high-k based MOSFETs
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Crespo Yepes, Albert (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Martin Martinez, Javier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Rodríguez Martínez, Rosana (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Aymerich Humet, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
In this work, the temperature dependence of the resistive switching phenomenon in metal-oxide-semiconductor field-effect-transistor (MOSFETs) with an ultra-thin Hf-based high-k dielectric is studied through analysis of the gate and drain currents for the two dielectric conductivity states. [...]
2013 - 10.1116/1.4789518
Journal of vacuum science and technology. B, Nanotechnology & microelectronics, Vol. 31 (2013) , p. 22203-22203-5
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6.
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6 p, 228.6 KB |
Resistive switching like-behavior in MOSFETs with ultra-thin HfSiON dielectric gate stack : pMOS and nMOS comparison and reliability implications
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Crespo Yepes, Albert (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Martin Martinez, Javier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Rodríguez Martínez, Rosana (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Aymerich Humet, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
In this work, the Resistive Switching (RS) phenomenon in n and pMOSFETs with ultrathin Hf based high-k dielectric is studied. Two different conductive levels, a high (HRS) and a low (LRS) resistance states can be distinguished in the dielectric. [...]
2013 - 10.1016/j.microrel.2013.07.046
Microelectronics reliability, Vol. 53, No. 9-11 (Sep.-Nov. 2013) , p. 1247-1251
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7.
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4 p, 1003.7 KB |
Degradation of polycrystalline HfO2-based gate dielectrics under nanoscale electrical stress
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Iglesias Santiso, Vanessa (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Lanza, Mario (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Zhang, K. (Peking University. Department of Electronics) ;
Bayerl, Albin (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Porti i Pujal, Marc (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Aymerich Humet, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Benstetter, Guenther (University of Applied Sciences Deggendorf. Electrical Engineering Department) ;
Shen, Z. Y. (Peking University. Department of Electronics) ;
Bersuker, G. (SEMATECH (Austin, Estats Units d'Amèrica))
The evolution of the electrical properties of HfO2/SiO2/Si dielectric stacks under electrical stress has been investigated using atomic force microscope-based techniques. The current through the grain boundaries (GBs), which is found to be higher than thorough the grains, is correlated to a higher density of positively charged defects at the GBs. [...]
2011 - 10.1063/1.3637633
Applied physics letters, Vol. 99, Issue 10 (September 2011) , p. 103510/1-103510/3
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