Results overview: Found 6 records in 0.02 seconds.
Articles, 6 records found
Articles 6 records found  
1.
5 p, 1.0 MB Temperature dependence of the resistive switching-related currents in ultra-thin high-k based MOSFETs / Crespo Yepes, Albert (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Martín Martínez, Javier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Rodríguez Martínez, Rosana (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Aymerich Humet, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
In this work, the temperature dependence of the resistive switching phenomenon in metal-oxide-semiconductor field-effect-transistor (MOSFETs) with an ultra-thin Hf-based high-k dielectric is studied through analysis of the gate and drain currents for the two dielectric conductivity states. [...]
2013 - 10.1116/1.4789518
Journal of Vacuum Science and Technology B, Vol. 31 (2013) , p. 22203-22203-5  
2.
4 p, 238.9 KB Temperature-dependent transition to progressive breakdown in thin silicon dioxide based gate dielectrics / Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; American Physical Society
The transition between well-defined soft and hard breakdown modes to progressive breakdown in ultrathin silicon dioxide based dielectrics is studied by means of the statistics of residual time (the time from first breakdown to device failure). [...]
2005 - 10.1063/1.1925316
Applied Physics Letters, Vol. 86, Issue 19 (May 2005) , p. 193502/1-193502/3  
3.
4 p, 503.7 KB Surface behavior of La2/3Ca1/3MnO3 epitaxial thin films / Abad Muñoz, Llibertat (Institut de Ciència de Materials de Barcelona) ; Martínez Perea, Benjamín (Institut de Ciència de Materials de Barcelona) ; Balcells Argemí, Lluís (Institut de Ciència de Materials de Barcelona) ; American Physical Society
The role of the surface layers in La2/3Ca1/3MnO3 magnetic oxide epitaxialthin films is analyzed. We show that the topmost layers do play a very relevant role on the transport properties acting as an insulating barrier. [...]
2005 - 10.1063/1.2133925
Applied Physics Letters, Vol. 87, Issue 21 (November 2005) , p. 212502  
4.
4 p, 257.1 KB Alternating current loss in a cylinder with power-law current-voltage characteristic / Chen, D. -X. (Institució Catalana de Recerca i Estudis Avançats) ; Gu, C. (Tsinghua University. Applied Superconductivity Research Center) ; American Physical Society
The transportac loss Q in a superconducting cylinder of radius a with a power-law current-voltage characteristicE=Ec∣J/Jc∣n as a function of current amplitude Im is numerically calculated for a set of given values of a,Jc, and frequency f at n=5, 10, 20, and 30. [...]
2005 - 10.1063/1.1947912
Applied Physics Letters, Vol. 86, Issue 25 (Juny 2005) , p. 252504  
5.
4 p, 227.5 KB Measuring electrical current during scanning probe oxidation / Pérez Murano, Francesc (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Martín Olmos, Cristina (Institut de Microelectrònica de Barcelona (IMB-CNM)) ; Barniol i Beumala, Núria (Universitat Autònoma de Barcelona. Departament de Enginyeria Electrònica) ; Kuramochi, H. (Nanotechnology Research Institute (Ibaraki, Japó)) ; Yokoyama, H. (Nanotechnology Research Institute (Ibaraki, Japó)) ; Dagata, J. A. (National Institute of Standards and Technology (Gaithersburg, Estats Units d'Amèrica)) ; American Physical Society
Electrical current is measured during scanning probe oxidation by performing force versus distance curves under the application of a positive sample voltage. It is shown how the time dependence of the current provides information about the kinetics of oxide growth under conditions in which the tip–surface distance is known unequivocally during current acquisition. [...]
2003 - 10.1063/1.1572480
Applied Physics Letters, Vol. 82, Issue 18 (April 2003) , p. 3086-3088  
6.
4 p, 494.5 KB Nondestructive thickness measurement of biological layers at the nanoscale by simultaneous topography and capacitance imaging / Casuso, Ignacio (Universitat de Barcelona. Departament d’Electrònica) ; Fumagalli, Laura (Universitat de Barcelona. Departament d’Electrònica) ; Gomila, Gabriel (Universitat de Barcelona. Departament d’Electrònica) ; Padrós, Esteve (Universitat Autònoma de Barcelona. Departament de Bioquímica i Biologia Molecular) ; American Physical Society
Nanoscale capacitance images of purple membrane layers are obtained simultaneously to topography in a nondestructive manner by operating alternating current sensing atomic force microscopy in jumping mode. [...]
2007 - 10.1063/1.2767979
Applied Physics Letters, Vol. 91, Issue 6 (August 2007) , p. 063111/1-063111/3  

Interested in being notified about new results for this query?
Set up a personal email alert or subscribe to the RSS feed.