Resultados globales: 15 registros encontrados en 0.04 segundos.
Artículos, Encontrados 14 registros
Documentos de investigación, Encontrados 1 registros
Artículos Encontrados 14 registros  1 - 10siguiente  ir al registro:
1.
10 p, 8.1 MB Selectivity Map for Molecular Beam Epitaxy of Advanced III-V Quantum Nanowire Networks / Aseev, Pavel (Delft University of Technology) ; Fursina, Alexandra (Delft University of Technology) ; Boekhout, Frenk (QuTech and Netherlands Organization for Applied Scientific Research) ; Krizek, Filip (University of Copenhagen) ; Sestoft, Joachim E. (University of Copenhagen) ; Borsoi, Francesco (Delft University of Technology) ; Heedt, Sebastian (Delft University of Technology) ; Wang, Guanzhong (Delft University of Technology) ; Binci, Luca (Delft University of Technology) ; Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia) ; Swoboda, Timm (Institut Català de Nanociència i Nanotecnologia) ; Koops, René (QuTech and Netherlands Organization for Applied Scientific Research) ; Uccelli, Emanuele (QuTech and Netherlands Organization for Applied Scientific Research) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Krogstrup, Peter (University of Copenhagen) ; Kouwenhoven, Leo P. (Delft University of Technology) ; Caroff, Philippe (Delft University of Technology)
Selective-area growth is a promising technique for enabling of the fabrication of the scalable III-V nanowire networks required to test proposals for Majorana-based quantum computing devices. However, the contours of the growth parameter window resulting in selective growth remain undefined. [...]
2019 - 10.1021/acs.nanolett.8b03733
Nano letters, Vol. 19, Issue 1 (January 2019) , p. 218-227  
2.
7 p, 1.2 MB Interfaces and nanostructures of functional oxide octahedral framework structures / Sandiumenge Ortiz, Felip (Institut de Ciència de Materials de Barcelona) ; Bagués Salgueró, Núria (Institut Català de Nanociència i Nanotecnologia) ; Santiso, José (Institut Català de Nanociència i Nanotecnologia)
In the past decade, the rich physics exhibited by solid interfaces combining octahedral framework structures of transition-metal oxides has fascinated the materials science community. However, their behavior still eludes the current understanding of classical semiconductor and metal epitaxy. [...]
2014 - 10.3389/fmats.2014.00013
Frontiers in materials, Vol. 1 (August 2014) , art. 13  
3.
7 p, 1.7 MB Epitaxial growth of SrTiO3 films on cube-textured Cu-Clad substrates by PLD at low temperature under reducing atmosphere / Padilla Sánchez, José Antonio (Universitat de Barcelona. Departament de Ciència dels Materials i Química Física) ; Xuriguera Martín, Elena (Universitat de Barcelona. Departament de Ciència dels Materials i Química Física) ; Rodríguez Domínguez, Laura (Institut Català de Nanociència i Nanotecnologia) ; Vannozzi, Angelo (Centro ricerche energia Frascati) ; Segarra Rubí, Mercè (Universitat de Barcelona. Departament de Ciència dels Materials i Química Física) ; Celentano, Giuseppe (Centro ricerche energia Frascati) ; Varela Fernández, Manuel (Universitat de Barcelona. Departament de Física Aplicada)
The growth of epitaxial {001}<100> SrTiO (STO) on low-cost cube-textured Cu-based clad substrate at low temperature was carried out by means of pulsed laser deposition (PLD). STO film was deposited in one step under a reducing atmosphere (5% H and 95% Ar mixture) to prevent the oxidation of the metal surface. [...]
2017 - 10.1186/s11671-017-1997-9
Nanoscale research letters, Vol. 12 (2017) , art. 226  
4.
8 p, 8.3 MB Initial Stages of the Growth of Mixed Iron-cobalt Oxides on Ru(0001) / Martín García, Laura (Instituto de Química Física "Rocasolano") ; Quesada, Adrián (Instituto de Cerámica y Vidrio. CSIC) ; Pérez, Lucas (Universidad Complutense de Madrid) ; Foerster, Michael (ALBA Laboratori de Llum de Sincrotró) ; Aballe, Lucía (ALBA Laboratori de Llum de Sincrotró) ; Figuera, Juan de la (Instituto de Química Física Rocasolano)
Mixed iron-cobalt oxides have been grown on a Ru(0001) single crystal substrate by reactive molecular beam epitaxy. The growth has been followed by low-energy electron microscopy and diffraction. Chemical characterization has been performed by selected area x-ray absorption spectroscopy. [...]
2016 - 10.1016/j.phpro.2016.11.075
Physics Procedia, Vol. 85 (2016) , p. 12-19  
5.
21 p, 1.0 MB High yield of gaas nanowire arrays on si mediated by the pinning and contact angle of Ga / Russo-Averchi, Eleonora (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; Vukajlovic Plestina, Jelena (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; Tütüncüoglu, Gözde (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; Matteini, Federico (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; Dalmau-Mallorquí, Anna (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; De La Mata, Maria (Institut de Ciència de Materials de Barcelona) ; Rüffer, Daniel (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; Potts, Heidi A. (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Conesa-Boj, Sonia (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; Fontcuberta i Morral, Anna (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs)
GaAs nanowire arrays on silicon offer great perspectives in the optoelectronics and solar cell industry. To fulfill this potential, gold-free growth in predetermined positions should be achieved. Ga-assisted growth of GaAs nanowires in the form of array has been shown to be challenging and difficult to reproduce. [...]
2015 - 10.1021/nl504437v
Nano letters, Vol. 15, issue 5 (May 2015) , p. 2869-2874  
6.
8 p, 9.3 MB Position-controlled growth of GaN nanowires and nanotubes on diamond by molecular beam epitaxy / Schuster, Fabian (Walter Schottky Institut, Physics Department, Technische Universität München) ; Hetzl, Martin (Technische Universität München. Walter Schottky Institute) ; Weiszer, Saskia (Technische Universität München. Walter Schottky Institute) ; Garrido Ariza, José A. (Technische Universität München. Walter Schottky Institute) ; De La Mata, Maria (Institut de Ciència de Materials de Barcelona (ICMAB-CSIC)) ; Magén, César (Universidad de Zaragoza. Instituto de Nanociencia de Aragón) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Stutzmann, Martin (Technische Universität München. Walter Schottky Institute) ; ALBA Laboratori de Llum de Sincrotró
In this work the position-controlled growth of GaN nanowires (NWs) on diamond by means of molecular beam epitaxy is investigated. In terms of growth, diamond can be seen as a model substrate, providing information of systematic relevance also for other substrates. [...]
2015 - 10.1021/nl504446r
Nano letters, Vol. 15, issue 3 (Nov. 2015) , p. 1773-1779  
7.
32 p, 3.3 MB Twin-induced InSb nanosails : a convenient high mobility quantum system / De La Mata, Maria (Institut Catalá de Nanociència i Nanotecnologia) ; Leturcq, Renaud (Institut d'Electronique, de Microélectronique, et de Nanotechnologie) ; Plissard, Sébastien R. (Centre national de la recherche scientifique. Laboratoire d'analyse et d'architecture des systèmes) ; Rolland, Chloé (Institut d'Electronique, de Microélectronique, et de Nanotechnologie) ; Magén, César (Instituto de Nanociencia de Aragón) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Caroff, Philippe (Institut d'Electronique, de Microélectronique, et de Nanotechnologie)
Ultra narrow bandgap III-V semiconductor nanomaterials provide a unique platform for realizing advanced nanoelectronics, thermoelectrics, infrared photodetection, and quantum transport physics. In this work we employ molecular beam epitaxy to synthesize novel nanosheet-like InSb nanostructures exhibiting superior electronic performance. [...]
2016 - 10.1021/acs.nanolett.5b05125
Nano letters, Vol. 16, issue 2 (Oct. 2016) , p. 825-833  
8.
41 p, 5.9 MB Surface-Guided Core-Shell ZnSe@ZnTe Nanowires as Radial p-n Heterojunctions with Photovoltaic Behavior / Oksenberg, Eitan (Weizmann Institute of Science (Israel)) ; Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia) ; Popovitz-Biro, Ronit (Weizmann Institute of Science (Israel)) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Joselevich, Ernesto (Weizmann Institute of Science (Israel))
The organization of nanowires on surfaces remains a major obstacle toward their large-scale integration into functional devices. Surface-material interactions have been used, with different materials and substrates, to guide horizontal nanowires during their growth into well-organized assemblies, but the only guided nanowire heterostructures reported so far are axial and not radial. [...]
2017 - 10.1021/acsnano.7b02199
ACS nano, Vol. 11, Núm. 6 (June 2017) , p. 6155-6166  
9.
5 p, 1.9 MB Gate current analysis of AlGaN/GaN on silicon heterojunction transistors at the nanoscale / Fontserè Recuenco, Abel (Centro Nacional de Microelectrónica) ; Pérez Tomàs, Amador (Centro Nacional de Microelectrónica) ; Placidi, Marcel (Centro Nacional de Microelectrónica) ; Aguiló Llobet, Jordi (Universitat Autònoma de Barcelona. Departament de Microelectrònica i Sistemes Electrònics) ; Baron, N. (Centre national de la recherche scientifique (França)) ; Chenot, S. (Centre national de la recherche scientifique (França)) ; Cordier, Y. (Centre national de la recherche scientifique (França)) ; Moreno, J. C. (Centre national de la recherche scientifique (França)) ; Iglesias Santiso, Vanessa (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Porti i Pujal, Marc (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Bayerl, Albin (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Lanza Martínez, Mario (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
The gate leakage current of AlGaN/GaN (on silicon)high electron mobility transistor(HEMT) is investigated at the micro and nanoscale. The gate current dependence (25-310 °C) on the temperature is used to identify the potential conduction mechanisms, as trap assisted tunneling or field emission. [...]
2012 - 10.1063/1.4748115
Applied physics letters, Vol. 101, Issue 9 (August 2012) , p. 093505/1-093505/4  
10.
4 p, 503.7 KB Surface behavior of La2/3Ca1/3MnO3 epitaxial thin films / Abad Muñoz, Llibertat (Institut de Ciència de Materials de Barcelona) ; Martínez, Benjamín (Institut de Ciència de Materials de Barcelona) ; Balcells Argemí, Lluís (Institut de Ciència de Materials de Barcelona) ; American Physical Society
The role of the surface layers in La2/3Ca1/3MnO3 magnetic oxide epitaxialthin films is analyzed. We show that the topmost layers do play a very relevant role on the transport properties acting as an insulating barrier. [...]
2005 - 10.1063/1.2133925
Applied physics letters, Vol. 87, Issue 21 (November 2005) , p. 212502  

Artículos : Encontrados 14 registros   1 - 10siguiente  ir al registro:
Documentos de investigación Encontrados 1 registros  
1.
67 p, 7.0 MB Directed self-assembly of block copolymers on chemically nano-patterned surfaces / Evangelio Araujo, Laura, autor. ; Pérez Murano, Francesc, supervisor acadèmic. ; Fraxedas i Calduch, Jordi, supervisor acadèmic. ; Bausells Roigé, Joan, supervisor acadèmic. ; Universitat Autònoma de Barcelona. Departament de Química.
La tesi doctoral titulada "Auto-assemblatge de copolímers de bloc per modificació química de la superfície", presenta com a objectiu principal el desenvolupament, implementació i caracterització d'un mètode de guiatge de copolímers de bloc basat en la modificació química de la superfície. [...]
The thesis entitled "Directed self-assembly of block copolymers on chemically nano-patterned surfaces", aboard the challenge of the development, implementation and characterization of a chemical epitaxy process to direct self-assemble block copolymers. [...]

[Bellaterra] : Universitat Autònoma de Barcelona, 2017.
3 documentos

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