Resultados globales: 2 registros encontrados en 0.08 segundos.
Artículos, Encontrados 2 registros
Artículos Encontrados 2 registros  
1.
4 p, 327.5 KB Theoretical evidence for the kick-out mechanism for B diffusion in SiC / Rurali, Riccardo (Centro Nacional de Microelectrónica) ; Godignon, Philippe (Centro Nacional de Microelectrónica) ; Rebollo Palacios, José Andrés (Centro Nacional de Microelectrónica) ; Ordejón Rontomé, Pablo (Institut de Ciència de Materials de Barcelona) ; Hernández, E. (Institut de Ciència de Materials de Barcelona) ; American Physical Society
In this letter, we analyze by means of first-principles electronic structure calculations the diffusion of B impurities in 3C-SiC. We find, through molecular dynamics, that substitutional B at a Si lattice site is readily displaced by a nearby Si interstitial by the process known as a kick-out mechanism, in agreement with recent experimental results. [...]
2002 - 10.1063/1.1515369
Applied Physics Letters, Vol. 81, Issue 16 (October 2002) , p. 2989-2991  
2.
4 p, 563.1 KB Ordered arrays of quantum wires through hole patterning : ab initio and empirical electronic structure calculations / Rurali, Riccardo (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Cartoixà Soler, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; American Physical Society
We propose an approach to the fabrication of one-dimensional nanostructures, based on the design of a pattern of channels onto a semiconductor surface. The feasibility of this approach is demonstrated by means of ab initio and empirical electronic structure calculations. [...]
2007 - 10.1063/1.2696774
Applied Physics Letters, Vol. 90, Issue 8 (February 2007) , p. 083118/1-083118/3  

¿Le interesa recibir alertas sobre nuevos resultados de esta búsqueda?
Defina una alerta personal vía correo electrónico o subscríbase al canal RSS.