Resultats globals: 11 registres trobats en 0.03 segons.
Articles, 11 registres trobats
Articles 11 registres trobats  1 - 10següent  anar al registre:
1.
6 p, 4.0 MB Resistive switching in hafnium dioxide layers : local phenomenon at grain Boundaries / Lanza Martínez, Mario (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Bersuker, G. (SEMATECH (Austin, Estats Units d'Amèrica)) ; Porti i Pujal, Marc (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Aymerich Humet, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Overcoming challenges associated with implementation of resistive random access memory technology for non-volatile information storage requires identifying the material characteristics responsible for resistive switching. [...]
2012 - 10.1063/1.4765342
Applied physics letters, Vol. 101 (2012) , p. 193502-1/193502-5  
2.
5 p, 1.9 MB Gate current analysis of AlGaN/GaN on silicon heterojunction transistors at the nanoscale / Fontserè Recuenco, Abel (Centro Nacional de Microelectrónica) ; Perez-Tomas, Amador (Centro Nacional de Microelectrónica) ; Placidi, Marcel (Centro Nacional de Microelectrónica) ; Aguiló Llobet, Jordi (Universitat Autònoma de Barcelona. Departament de Microelectrònica i Sistemes Electrònics) ; Baron, N. (Centre National de la Recherche Scientifique (França)) ; Chenot, S. (Centre National de la Recherche Scientifique (França)) ; Cordier, Y. (Centre National de la Recherche Scientifique (França)) ; Moreno, J. C. (Centre National de la Recherche Scientifique (França)) ; Iglesias Santiso, Vanessa (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Porti i Pujal, Marc (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Bayerl, Albin (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Lanza Martínez, Mario (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
The gate leakage current of AlGaN/GaN (on silicon)high electron mobility transistor(HEMT) is investigated at the micro and nanoscale. The gate current dependence (25-310 °C) on the temperature is used to identify the potential conduction mechanisms, as trap assisted tunneling or field emission. [...]
2012 - 10.1063/1.4748115
Applied physics letters, Vol. 101, Issue 9 (August 2012) , p. 093505/1-093505/4  
3.
4 p, 1003.7 KB Degradation of polycrystalline HfO2-based gate dielectrics under nanoscale electrical stress / Iglesias Santiso, Vanessa (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Lanza Martínez, Mario (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Zhang, K. (Peking University. Department of Electronics) ; Bayerl, Albin (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Porti i Pujal, Marc (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Aymerich Humet, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Benstetter, Guenther (University of Applied Sciences Deggendorf. Electrical Engineering Department) ; Shen, Z. Y. (Peking University. Department of Electronics) ; Bersuker, G. (SEMATECH (Austin, Estats Units d'Amèrica))
The evolution of the electrical properties of HfO2/SiO2/Si dielectric stacks under electrical stress has been investigated using atomic force microscope-based techniques. The current through the grain boundaries (GBs), which is found to be higher than thorough the grains, is correlated to a higher density of positively charged defects at the GBs. [...]
2011 - 10.1063/1.3637633
Applied physics letters, Vol. 99, Issue 10 (September 2011) , p. 103510/1-103510/3  
4.
4 p, 238.9 KB Temperature-dependent transition to progressive breakdown in thin silicon dioxide based gate dielectrics / Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; American Physical Society
The transition between well-defined soft and hard breakdown modes to progressive breakdown in ultrathin silicon dioxide based dielectrics is studied by means of the statistics of residual time (the time from first breakdown to device failure). [...]
2005 - 10.1063/1.1925316
Applied physics letters, Vol. 86, Issue 19 (May 2005) , p. 193502/1-193502/3  
5.
4 p, 232.3 KB Effects of high-field electrical stress on the conduction properties of ultra-thin La2O3 films / Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Molina, J. (Tokyo Institute of Technology. Frontier Collaborative Research Center) ; Kim, Y. (Tokyo Institute of Technology. Frontier Collaborative Research Center) ; Iwai, H. (Tokyo Institute of Technology. Frontier Collaborative Research Center) ; American Physical Society
Electron transport in high-field stressed metal-insulator-silicon devices with ultrathin (<5nm) lanthanum oxide layers is investigated. We show that the leakage current flowing through the structure prior to degradation is direct and Fowler-Nordheimtunneling conduction, while that after stress exhibits diode-like behavior with series and parallel resistances. [...]
2005 - 10.1063/1.1944890
Applied physics letters, Vol. 86, Issue 23 (June 2005) , p. 232104/1-232104/3  
6.
4 p, 309.7 KB Soft breakdown fluctuation events in ultrathin SiO2 layers / Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Rodríguez Martínez, Rosana (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Aymerich Humet, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; American Physical Society
When an ultrathin (<5 nm) oxide is subjected to electrical stress, several soft-breakdown events can occur prior to the final dielectric breakdown. After the occurrence of such failure events, the current-voltage (I-V)characteristic corresponds to the superposition of highly conductive spots and background conduction through the undegraded capacitor area. [...]
1998 - 10.1063/1.121910
Applied physics letters, Vol. 73, Issue 4 (July 1998) , p. 490-492  
7.
4 p, 300.2 KB Post-radiation-induced soft breakdown conduction properties as a function of temperature / Cester, Andrea (Universitá di Padova. Dipartimento di Elettronica e Informatica) ; Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Paccagnella, Alessandro (Universitá di Padova. Dipartimento di Elettronica e Informatica) ; Miranda, Enrique (Universidad de Buenos Aires. Departamento de Fı́sica) ; American Physical Society
When a thin oxide is subjected to heavy ion irradiation, a large leakage current similar to the soft breakdown can be produced. In this work, we have studied the radiation soft breakdown (RSB) after 257 MeV Ag and I irradiation by using a quantum point contact (QPC) model, which also applies to hard and soft breakdown produced by electrical stresses. [...]
2001 - 10.1063/1.1398329
Applied physics letters, Vol. 79, Issue 9 (July 2001) , p. 1336-1338  
8.
4 p, 286.6 KB Mesoscopic approach to progressive breakdown in ultrathin SiO2 layers / Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; American Physical Society
The opening of a breakdown path across the ultrathin oxide layer in a metal-oxide-semiconductor structure caused by the application of electrical stress can be analyzed within the framework of the physics of mesoscopic conductors. [...]
2007 - 10.1063/1.2761831
Applied physics letters, Vol. 91, Issue 5 (July 2007) , p. 053502/1-053502/3  
9.
4 p, 315.4 KB Electron transport through electrically induced nanoconstrictions in HfSiON gate stacks / Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Falbo, P. (University of Calabria. Dipartimento di Elettronica Informatica e Sistemistica) ; Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Crupi, F. (University of Calabria. Dipartimento di Elettronica Informatica e Sistemistica) ; American Physical Society
A microscopic picture for the progressive leakage current growth in electrically stressed HfxSi1−xON/SiON gate stacks in metal-oxide-semiconductor transistors based on the physics of mesoscopic conductors is proposed. [...]
2008 - 10.1063/1.2949748
Applied physics letters, Vol. 92, Issue 25 (June 2008) , p. 253505/1-253505/3  
10.
4 p, 345.8 KB Electrical characterization of the soft breakdown failure mode in MgO layers / Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; O'Connor, E. (University College Cork. Tyndall National Institute) ; Hughes, G. (Dublin City University. School of Physical Sciences) ; Casey, P. (Dublin City University. School of Physical Sciences) ; Cherkaoui, K. (University College Cork. Tyndall National Institute) ; Monaghan, S. (University College Cork. Tyndall National Institute) ; Long, R. (University College Cork. Tyndall National Institute) ; O'Connell, D. (University College Cork. Tyndall National Institute) ; Hurley, P. K. (University College Cork. Tyndall National Institute) ; American Physical Society
The soft breakdown (SBD) failure mode in 20 nm thick MgO dielectric layers grown on Si substrates was investigated. We show that during a constant voltage stress, charge trapping and progressive breakdown coexist, and that the degradation dynamics is captured by a power-law time dependence. [...]
2009 - 10.1063/1.3167827
Applied physics letters, Vol. 95, Issue 1 (July 2009) , p. 012901/1-012901/3  

Articles : 11 registres trobats   1 - 10següent  anar al registre:
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