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Artículos Encontrados 20 registros  1 - 10siguiente  ir al registro:
1.
21 p, 1.0 MB High yield of gaas nanowire arrays on si mediated by the pinning and contact angle of Ga / Russo-Averchi, Eleonora (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; Vukajlovic Plestina, Jelena (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; Tütüncüoglu, Gözde (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; Matteini, Federico (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; Dalmau-Mallorquí, Anna (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; De La Mata, Maria (Institut de Ciència de Materials de Barcelona) ; Rüffer, Daniel (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; Potts, Heidi A. (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Conesa-Boj, Sonia (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; Fontcuberta i Morral, Anna (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs)
GaAs nanowire arrays on silicon offer great perspectives in the optoelectronics and solar cell industry. To fulfill this potential, gold-free growth in predetermined positions should be achieved. Ga-assisted growth of GaAs nanowires in the form of array has been shown to be challenging and difficult to reproduce. [...]
2015 - 10.1021/nl504437v
Nano letters, Vol. 15, issue 5 (May 2015) , p. 2869-2874  
2.
8 p, 9.3 MB Position-controlled growth of GaN nanowires and nanotubes on diamond by molecular beam epitaxy / Schuster, Fabian (Walter Schottky Institut, Physics Department, Technische Universität München) ; Hetzl, Martin (Technische Universität München. Walter Schottky Institute) ; Weiszer, Saskia (Technische Universität München. Walter Schottky Institute) ; Garrido Ariza, José A. (Technische Universität München. Walter Schottky Institute) ; De La Mata, Maria (Institut de Ciència de Materials de Barcelona (ICMAB-CSIC)) ; Magén, César (Universidad de Zaragoza. Instituto de Nanociencia de Aragón) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Stutzmann, Martin (Technische Universität München. Walter Schottky Institute) ; ALBA Laboratori de Llum de Sincrotró
In this work the position-controlled growth of GaN nanowires (NWs) on diamond by means of molecular beam epitaxy is investigated. In terms of growth, diamond can be seen as a model substrate, providing information of systematic relevance also for other substrates. [...]
2015 - 10.1021/nl504446r
Nano letters, Vol. 15, issue 3 (Nov. 2015) , p. 1773-1779  
3.
10 p, 4.7 MB Phonon engineering in isotopically disordered silicon nanowires / Mukherjee, S. (Polytechnique Montréal. Département de génie physique) ; Givan, U. (Max-Planck-Institut für Mikrostrukturphysik) ; Senz, S. (Max-Planck-Institut für Mikrostrukturphysik) ; Bergeron, A. (Polytechnique Montréal. Département de génie physiquel) ; Francoeur, S. (Polytechnique Montréal. Département de génie physique) ; De La Mata, Maria (Institut Català de Nanociència i Nanotecnologia) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Sekiguchi, T. (Keio University. Department of Applied Physics and Physico-Informatics) ; Itoh, K.M. (Keio University. Department of Applied Physics and Physico-Informatics) ; Isheim, D. (Northwestern University. Department of Materials Science and Engineering) ; Seidman, D.N. (Northwestern University. Department of Materials Science and Engineering) ; Moutanabbir, O. (Polytechnique Montréal. Département de génie physique)
The introduction of stable isotopes in the fabrication of semiconductor nanowires provides an additional degree of freedom to manipulate their basic properties, design an entirely new class of devices, and highlight subtle but important nanoscale and quantum phenomena. [...]
2015 - 10.1021/acs.nanolett.5b00708
Nano letters, Vol. 15, issue 6 (Oct. 2015) , p. 3885-3893  
4.
6 p, 1.5 MB Resonant tunnelling features in a suspended silicon nanowire single-hole transistor / Llobet Sixto, Jordi (Institut de Microelectrònica de Barcelona) ; Krali, Emiljana (Imperial College London. Department of Electrical and Electronic Engineering) ; Wang, Chen (Imperial College London. Department of Electrical and Electronic Engineering) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Jones, Mervyn E. (Imperial College London. Department of Electrical and Electronic Engineering) ; Pérez Murano, Francesc (Institut de Microelectrònica de Barcelona) ; Durrani, Zahid A. K. (Imperial College London. Department of Electrical and Electronic Engineering) ; ALBA Laboratori de Llum de Sincrotró
Suspended silicon nanowires have significant potential for a broad spectrum of device applications. A suspended p-type Si nanowire incorporating Si nanocrystal quantum dots has been used to form a single-hole transistor. [...]
2015 - 10.1063/1.4936757
Applied physics letters, Vol. 107, issue 22 (Nov. 2015) , art. 223501  
5.
15 p, 3.9 MB UV Photosensing Characteristics of Nanowire-Based GaN/AlN Superlattices / Lähnemann, Jonas (University Grenoble Alpes) ; Den Hertog, Martien (Institut Nèel (Grenoble, França)) ; Hille, Pascal (I. Physikalisches Institut. Justus-Liebig-Universitt Gießen) ; Mata Fernández, María de la (Institut Catalá de Nanociència i Nanotecnologia) ; Fournier, Thierry (Institut Nèel (Grenoble, França)) ; Schörmann, Jörg (I. Physikalisches Institut. Justus-Liebig-Universitt Gießen) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Eickhoff, Martin (I. Physikalisches Institut. Justus-Liebig-Universitt Gießen) ; Monroy, Eva (University Grenoble Alpes)
We have characterized the photodetection capabilities of single GaN nanowires incorporating 20 periods of AlN/GaN:Ge axial heterostructures enveloped in an AlN shell. Transmission electron microscopy confirms the absence of an additional GaN shell around the heterostructures. [...]
2016 - 10.1021/acs.nanolett.6b00806
Nano Letters, Vol. 16, Num. 5 (May 2016) , p. 3260-3267  
6.
32 p, 3.3 MB Twin-induced InSb nanosails : a convenient high mobility quantum system / Mata Fernández, María de la (Institut Catalá de Nanociència i Nanotecnologia) ; Leturcq, Renaud (Institut d’Electronique, de Microélectronique, et de Nanotechnologie) ; Plissard, Sébastien R. (Centre national de la recherche scientifique. Laboratoire d'analyse et d'architecture des systèmes) ; Rolland, Chloé (Institut d’Electronique, de Microélectronique, et de Nanotechnologie) ; Magén, César (Instituto de Nanociencia de Aragón) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Caroff, Philippe (Institut d’Electronique, de Microélectronique, et de Nanotechnologie)
Ultra narrow bandgap III-V semiconductor nanomaterials provide a unique platform for realizing advanced nanoelectronics, thermoelectrics, infrared photodetection, and quantum transport physics. In this work we employ molecular beam epitaxy to synthesize novel nanosheet-like InSb nanostructures exhibiting superior electronic performance. [...]
2016 - 10.1021/acs.nanolett.5b05125
Nano letters, Vol. 16, issue 2 (Oct. 2016) , p. 825-833  
7.
13 p, 2.5 MB Enhanced photoelectrochemical water splitting of hematite multilayer nanowire photoanodes by tuning the surface state via bottom-up interfacial engineering / Tang, PengYi (Institut Català de Nanociència i Nanotecnologia) ; Xie, HaiBing (Institut de Recerca en Energia de Catalunya) ; Ros, Carles (Institut de Recerca en Energia de Catalunya) ; Han, Lijuan (Institut Català d'Investigació Química) ; Biset-Peiró, Martí (Institut de Recerca en Energia de Catalunya) ; He, YongMin (Lanzhou University. School of Physical Science and Technology) ; Kramer, W. (California Institute of Technology. Division of Chemistry and Chemical Engineering) ; Pérez Rodríguez, Alejandro (Institut de Recerca en Energia de Catalunya) ; Saucedo, Edgardo (Institut de Recerca en Energia de Catalunya) ; Galán-Mascarós, José Ramón (Institut Català d'Investigació Química) ; Andreu, Teresa (Institut de Recerca en Energia de Catalunya) ; Morante, Joan Ramon (Institut de Recerca en Energia de Catalunya) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia)
The optimization of multiple interfaces in hematite (α-Fe₂O₃) based composites for photoelectrochemical water splitting to facilitate charge transport in the bulk is of paramount importance to obtain enhanced solar-to-fuel efficiency. [...]
2017 - 10.1039/c7ee01475a
Energy and environmental science, Vol. 10, Issue 10 (October 2017) , p. 2124-2136  
8.
Magnetically-actuated mesoporous nanowires for enhanced heterogeneous catalysis / Serrà, Albert (Universitat de Barcelona. Departament de Ciència de Materials i Química Física) ; Grau, Sergi (Institut Català d'Investigació Química) ; Gimbert Suriñach, Carolina (Institut Català d'Investigació Química) ; Sort Viñas, Jordi (Universitat Autònoma de Barcelona. Departament de Física) ; Nogués i Sanmiquel, Josep (Institut Català de Nanociència i Nanotecnologia) ; Vallés, Elisa (Universitat de Barcelona. Departament de Ciència de Materials i Química Física)
We study the optimization of the catalytic properties of entirely magnetic Co–Pt compact and mesoporous nanowires of different diameters (25–200 nm) by using magnetic actuation. The nanowires are a single-entity, robust, magnetic-catalyst with a huge catalytically-active surface area. [...]
2017 - 10.1016/j.apcatb.2017.05.071
Applied catalysis B environmental, Vol. 217, (Nov. 2017) , p. 81-91  
9.
12 p, 2.7 MB Top-down CMOS-NEMS polysilicon nanowire with piezoresistive transduction / Marigó Ferrer, Eloi (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Sansa Perna, Marc (Universitat Autònoma de Barcelona. Institut de Microelectrònica de Barcelona) ; Pérez Murano, Francesc (Universitat Autònoma de Barcelona. Institut de Microelectrònica de Barcelona) ; Uranga del Monte, Aránzazu (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Barniol i Beumala, Núria (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
A top-down clamped-clamped beam integrated in a CMOS technology with a cross section of 500 nm × 280 nm has been electrostatic actuated and sensed using two different transduction methods: capacitive and piezoresistive. [...]
2015 - 10.3390/s150717036
Sensors, Vol. 15 (July 2015) , p. 17036-17047  
10.
6 p, 839.0 KB Copper@polypyrrole nanocables / Suárez Guevara, Jullieth Gabriela (Institut Català de Nanociència i Nanotecnologia) ; Ayyad, Omar (Institut Català de Nanociència i Nanotecnologia) ; Gómez-Romero, Pedro (MATGAS)
A simple hydrothermal redox reaction between microcrystalline CuOHCl and pyrrole leads to the isolation of striking nanostructures formed by polypyrrole-coated copper nanocables. These multicomponent cables that feature single-crystalline face-centered cubic Cu cores (ca. [...]
2012 - 10.1186/1556-276X-7-521
Nanoscale Research Letters, Vol. 7 (Dec. 2012) , art. 521  

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