Resultados globales: 7 registros encontrados en 0.02 segundos.
Artículos, Encontrados 6 registros
Documentos de investigación, Encontrados 1 registros
Artículos Encontrados 6 registros  
1.
10 p, 2.0 MB Impact of the regularization parameter in the mean free path reconstruction method : Nanoscale heat transport and beyond / Sanchez Martinez, Miguel Ángel (Institut Català de Nanociència i Nanotecnologia) ; Alzina, Francesc (Institut Català de Nanociència i Nanotecnologia) ; Oyarzo, Juan (Pontificia Universidad Católica de Valparaíso. Instituto de Química) ; Sotomayor Torres, Clivia M. (Institut Català de Nanociència i Nanotecnologia) ; Chávez Ángel, Emigdio (Institut Català de Nanociència i Nanotecnologia)
The understanding of the mean free path (MFP) distribution of the energy carriers in materials (e. g. , electrons, phonons, magnons, etc. ) provides a key physical insight into their transport properties. [...]
2019 - 10.3390/nano9030414
Nanomaterials, Vol. 9, Issue 3 (March 2019) , art. 414  
2.
13 p, 1.2 MB Acoustic phonon propagation in ultra-thin Si membranes under biaxial stress field / Graczykowski, Bartlomiej (Institut Català de Nanociència i Nanotecnologia) ; Gomis Bresco, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Alzina, Francesc (Institut Català de Nanociència i Nanotecnologia) ; Reparaz, Juan Sebastián (Institut Català de Nanociència i Nanotecnologia) ; Shchepetov, Andrey (VTT Technical Research Centre of Finland) ; Prunnila, Mika (VTT Technical Research Centre of Finland) ; Ahopelto, Jouni (VTT Technical Research Centre of Finland) ; Sotomayor Torres, Clivia M. (Institut Català de Nanociència i Nanotecnologia)
We report on stress induced changes in the dispersion relations of acoustic phonons propagating in 27 nm thick single crystalline Si membranes. The static tensile stress (up to 0. 3 GPa) acting on the Si membranes was achieved using an additional strain compensating silicon nitride frame. [...]
2014 - 10.1088/1367-2630/16/7/073024
New journal of physics, Vol. 16 (July 2014) , art. 73024  
3.
10 p, 4.7 MB Phonon engineering in isotopically disordered silicon nanowires / Mukherjee, S. (Polytechnique Montréal. Département de génie physique) ; Givan, U. (Max-Planck-Institut für Mikrostrukturphysik) ; Senz, S. (Max-Planck-Institut für Mikrostrukturphysik) ; Bergeron, A. (Polytechnique Montréal. Département de génie physiquel) ; Francoeur, S. (Polytechnique Montréal. Département de génie physique) ; De La Mata, Maria (Institut Català de Nanociència i Nanotecnologia) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Sekiguchi, T. (Keio University. Department of Applied Physics and Physico-Informatics) ; Itoh, K.M. (Keio University. Department of Applied Physics and Physico-Informatics) ; Isheim, D. (Northwestern University. Department of Materials Science and Engineering) ; Seidman, D.N. (Northwestern University. Department of Materials Science and Engineering) ; Moutanabbir, O. (Polytechnique Montréal. Département de génie physique)
The introduction of stable isotopes in the fabrication of semiconductor nanowires provides an additional degree of freedom to manipulate their basic properties, design an entirely new class of devices, and highlight subtle but important nanoscale and quantum phenomena. [...]
2015 - 10.1021/acs.nanolett.5b00708
Nano letters, Vol. 15, issue 6 (Oct. 2015) , p. 3885-3893  
4.
4 p, 252.9 KB Memory and nonlocal effects in heat transport : from diffusive to ballistic regimes / Àlvarez Calafell, Francesc Xavier (Universitat Autònoma de Barcelona. Departament de Física) ; Jou i Mirabent, David, 1953- (Universitat Autònoma de Barcelona. Departament de Física) ; American Physical Society
The authors discuss a generalized transportmodel including memory and nonlocal effects, which aims to describe the transition of heat transport from the diffusive regime to the ballistic regime. By using an effective thermal conductivity depending on the Knudsen number, they describe in a single equation the behavior of conductivity in terms of the system size and a reduction in the limit flux through nanoscale devices.
2007 - 10.1063/1.2645110
Applied physics letters, Vol. 90, Issue 8 (February 2007) , p. 083109/1-083109/3  
5.
4 p, 337.7 KB Cross-plane thermal conductivity reduction of vertically uncorrelated Ge/Si quantum dot superlattices / Álvarez Quintana, Jaime (Universitat Autònoma de Barcelona. Departament de Física) ; Àlvarez Calafell, Francesc Xavier (Universitat Autònoma de Barcelona. Departament de Física) ; Rodríguez Viejo, Javier (Universitat Autònoma de Barcelona. Departament de Física) ; Jou i Mirabent, David, 1953- (Universitat Autònoma de Barcelona. Departament de Física) ; Lacharmoise, Paul Dominique (Institut de Ciència de Materials de Barcelona) ; Bernardi, Alessandro (Institut de Ciència de Materials de Barcelona) ; Goñi, Alejandro (Institut de Ciència de Materials de Barcelona) ; Alonso Carmona, Maria Isabel (Institut de Ciència de Materials de Barcelona) ; American Physical Society
A drastic reduction in temperature dependent cross-plane thermal conductivity κ occurs in Gequantum dotsuperlattices (QDSLs), depending on the vertical correlation between dots. Measurements show at least a twofold decrease of κ in uncorrelated dot structures as compared to structures with the same Si spacer of 20nm but good vertical dot alignment. [...]
2008 - 10.1063/1.2957038
Applied physics letters, Vol. 93, Issue 1 (July 2008) , p. 013112/1-013112/3  
6.
4 p, 256.1 KB Pore-size dependence of the thermal conductivity of porous silicon : a phonon hydrodynamic approach / Àlvarez Calafell, Francesc Xavier (Universitat Autònoma de Barcelona. Departament de Física) ; Jou i Mirabent, David, 1953- (Universitat Autònoma de Barcelona. Departament de Física) ; Sellitto, A. (University of Basilicata. Department of Mathematics and Computer Science) ; American Physical Society
Phononhydrodynamics is used to analyze the influence of porosity and of pore size on reduction in thermal conductivity in porous silicon, with respect to crystalline silicon. The expressions predict that the thermal conductivity is lower for higher porosity and for smaller pore radius, as a consequence of phononballisticeffects. [...]
2010 - 10.1063/1.3462936
Applied physics letters, Vol. 97, Issue 3 (July 2010) , p. 33103  

Documentos de investigación Encontrados 1 registros  
1.
188 p, 2.7 MB On thermal transport by phonons in bulk and nanostructured semiconductor materials / de Tomás Andrés, Carla ; Àlvarez Calafell, Francesc Xavier, dir. (Universitat Autònoma de Barcelona. Departament de Física) ; Cantarero Sáez, Andrés, dir. ; Universitat Autònoma de Barcelona. Departament de Física
La presente tesis doctoral versa sobre el transporte de calor llevado a cabo por los fonones en sólidos cristalinos semiconductores. La motivación de este trabajo es doble. En primer lugar, se pretende contribuir a entender mejor cómo funciona el transporte de calor a distintas escalas de tamaño: desde semiconductores con tamaño bulk (del orden de milímetros o mayores) hasta semiconductores nano-estructurados, como por ejemplo nanocables o láminas finas, cuyos tamaños característicos están en la escala nanométrica. [...]
The aim of this theoretical work is twofold. First, to contribute to a better understand- ing of phonon heat transport in bulk and nanostructured semiconductors, like thin-films or nanowires, in a wide range of temperatures, paying special attention to phonon-phonon col- lisions. [...]

[Barcelona] : Universitat Autònoma de Barcelona, 2015  

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