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Resultados globales: 9 registros encontrados en 0.02 segundos.
Artículos, Encontrados 9 registros
Artículos Encontrados 9 registros  
1.
8 p, 3.0 MB Artificial Graphene Spin Polarized Electrode for Magnetic Tunnel Junctions / Zatko, Victor (Université Paris-Saclay) ; Galceran, Regina (Institut Català de Nanociència i Nanotecnologia) ; Galbiati, Marta (Université Paris-Saclay) ; Peiro, Julian (Université Paris-Saclay) ; Godel, Florian (Université Paris-Saclay) ; Kern, Lisa-Marie (Université Paris-Saclay) ; Perconte, David (Université Paris-Saclay) ; Ibrahim, Fatima (Université Grenoble Alpes) ; Hallal, Ali (Université Grenoble Alpes) ; Chshiev, Mairbek (Institut Universitaire de France) ; Martínez, Benjamín (Institut de Ciència de Materials de Barcelona) ; Frontera, Carlos (Institut de Ciència de Materials de Barcelona) ; Balcells Argemí, Lluís (Institut de Ciència de Materials de Barcelona) ; Kidambi, Piran R. (Vanderbilt University) ; Robertson, John (University of Cambridge) ; Hofmann, Stephan (University of Cambridge) ; Collin, Sophie (Université Paris-Saclay) ; Petroff, Frédéric (Université Paris-Saclay) ; Martin, Marie-Blandine (Université Paris-Saclay) ; Dlubak, Bruno (Université Paris-Saclay) ; Seneor, Pierre (Université Paris-Saclay)
2D materials offer the ability to expose their electronic structure to manipulations by a proximity effect. This could be harnessed to craft properties of 2D interfaces and van der Waals heterostructures in devices and quantum materials. [...]
2023 - 10.1021/acs.nanolett.2c03113
Nano letters, Vol. 23, Issue 1 (January 2023) , p. 34-41  
Registro completo - Creative Commons
2.
12 p, 3.5 MB Magnetic order in 3D topological insulators-Wishful thinking or gateway to emergent quantumeffects? / Figueroa García, Adriana Isabel (Institut Català de Nanociència i Nanotecnologia) ; Hesjedal, Thorsten (University of Oxford. Department of Physics) ; Steinke, Nina-Juliane (Institut Laue-Langevin)
Three-dimensional topological insulators (TIs) are a perfectly tuned quantum-mechanical machinery in which counterpropagating and oppositely spin-polarized conduction channels balance each other on the surface of the material. [...]
2020 - 10.1063/5.0027987
Applied physics letters, Vol. 117, issue 15 (Oct. 2020) , art. 150502  
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3.
41 p, 1.9 MB Van der Waals heterostructures for spintronics and opto-spintronics / Sierra, Juan F. (Institut Català de Nanociència i Nanotecnologia) ; Fabian, Jaroslav (University of Regensburg. Institute for Theoretical Physics) ; Kawakami, Roland (Ohio State University. Department of Physics) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia) ; Valenzuela, Sergio O. (Institut Català de Nanociència i Nanotecnologia)
The large variety of 2D materials and their co-integration in van der Waals heterostructures enable innovative device engineering. In addition, their atomically thin nature promotes the design of artificial materials by proximity effects that originate from short-range interactions. [...]
2021 - 10.1038/s41565-021-00936-x
Nature Nanotechnology, Vol. 16, issue 8 (August 2021) , p. 856-868  
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4.
29 p, 1.7 MB Coherent epitaxial semiconductor-ferromagnetic insulator InAs/EuS interfaces : band alignment and magnetic structure / Liu, Yu (Microsoft Quantum Materials Lab Copenhagen) ; Luchini, Alessandra (Niels Bohr Institute) ; Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia) ; Koch, Christian (Institut Català de Nanociència i Nanotecnologia) ; Schuwalow, Sergej (Niels Bohr Institute) ; Khan, Sabbir A. (Niels Bohr Institute) ; Stankevič, Tomas (Microsoft Quantum Materials Lab Copenhagen) ; Francoual, Sonia (Deutsches Elektronen-Synchrotron Desy) ; Mardegan, Jose R. L. (Deutsches Elektronen-Synchrotron Desy) ; Krieger, Jonas A. (Paul Scherrer Institut (Suïssa)) ; Strocov, Vladimir N. (Paul Scherrer Institut (Suïssa)) ; Stahn, Jochen (Paul Scherrer Institut (Suïssa)) ; Vaz, Carlos A. F. (Paul Scherrer Institut (Suïssa)) ; Ramakrishnan, Mahesh (Paul Scherrer Institut (Suïssa)) ; Staub, Urs (Paul Scherrer Institut (Suïssa)) ; Lefmann, Kim (Niels Bohr Institute) ; Aeppli, Gabriel (Paul Scherrer Institut (Suïssa)) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Krogstrup, Peter (Niels Bohr Institute)
Hybrid semiconductor-ferromagnetic insulator heterostructures are interesting due to their tunable electronic transport, self-sustained stray field, and local proximitized magnetic exchange. In this work, we present lattice-matched hybrid epitaxy of semiconductor-ferromagnetic insulator InAs/EuS heterostructures and analyze the atomic-scale structure and their electronic and magnetic characteristics. [...]
2020 - 10.1021/acsami.9b15034
ACS applied materials & interfaces, Vol. 12, issue 7 (Feb. 2020) , p. 8780-8787  
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5.
8 p, 9.3 MB Position-controlled growth of GaN nanowires and nanotubes on diamond by molecular beam epitaxy / Schuster, Fabian (Walter Schottky Institut, Physics Department, Technische Universität München) ; Hetzl, Martin (Technische Universität München. Walter Schottky Institute) ; Weiszer, Saskia (Technische Universität München. Walter Schottky Institute) ; Garrido, Jose (Technische Universität München. Walter Schottky Institute) ; De La Mata, Maria (Institut de Ciència de Materials de Barcelona) ; Magen Dominguez, Cesar (Universidad de Zaragoza. Instituto de Nanociencia y Materiales de Aragón) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Stutzmann, Martin (Technische Universität München. Walter Schottky Institute) ; ALBA Laboratori de Llum de Sincrotró
In this work the position-controlled growth of GaN nanowires (NWs) on diamond by means of molecular beam epitaxy is investigated. In terms of growth, diamond can be seen as a model substrate, providing information of systematic relevance also for other substrates. [...]
2015 - 10.1021/nl504446r
Nano letters, Vol. 15, issue 3 (Nov. 2015) , p. 1773-1779  
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6.
19 p, 1.3 MB Spin hall effect and weak antilocalization in graphene/transition metal dichalcogenide heterostructures / Garcia, José H. (Institut Català de Nanociència i Nanotecnologia) ; Cummings, Aron (Institut Català de Nanociència i Nanotecnologia) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
We report on a theoretical study of the spin Hall Effect (SHE) and weak antilocalization (WAL) in graphene/transition metal dichalcogenide (TMDC) heterostructures, computed through efficient real-space quantum transport methods, and using realistic tight-binding models parametrized from ab initio calculations. [...]
2017 - 10.1021/acs.nanolett.7b02364
Nano letters, Vol. 17, issue 8 (Sep. 2017) , p. 5078-5083  
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7.
9 p, 997.0 KB Giant spin lifetime anisotropy in graphene induced by proximity effects / Cummings, Aron (Institut Català de Nanociència i Nanotecnologia) ; Garcia, José H. (Institut Català de Nanociència i Nanotecnologia) ; Fabian, Jaroslav (Universität Regensburg. Insitute for Theoretical Physics) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
We report on fundamental aspects of spin dynamics in heterostructures of graphene and transition metal dichalcogenides (TMDCs). By using realistic models derived from first principles we compute the spin lifetime anisotropy, defined as the ratio of lifetimes for spins pointing out of the graphene plane to those pointing in the plane. [...]
2017 - 10.1103/PhysRevLett.119.206601
Physical review letters, Vol. 119 issue 20 (Nov. 2017) , p. 206601  
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8.
8 p, 1.4 MB Tailoring magnetic insulator proximity effects in graphene : First-principles calculations / Hallal, Ali (Université Grenoble Alpes) ; Ibrahim, Fatima (Université Grenoble Alpes) ; Yang, Hongxin (Université Grenoble Alpes) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia) ; Chshiev, Mairbek (Université Grenoble Alpes)
We report a systematic first-principles investigation of the influence of different magnetic insulators on the magnetic proximity effect induced in graphene. Four different magnetic insulators are considered: two ferromagnetic europium chalcogenides namely EuO and EuS and two ferrimagnetic insulators yttrium iron garnet (YIG) and cobalt ferrite (CFO). [...]
2017 - 10.1088/2053-1583/aa6663
2D Materials, Vol. 4, Núm. 2 (June 2017) , article 025074  
Registro completo - Creative Commons
9.
4 p, 233.4 KB Large anomalous enhancement of perpendicular exchange bias by introduction of a nonmagnetic spacer between the ferromagnetic and antiferromagnetic layers / Garcia, F. (SPINTEC (Spin Electronics Research)) ; Sort Viñas, Jordi (SPINTEC (Spin Electronics Research)) ; Rodmacq, B. (SPINTEC (Spin Electronics Research)) ; Auffret, Stéphane (SPINTEC (Spin Electronics Research)) ; Dieny, B. (SPINTEC (Spin Electronics Research)) ; American Physical Society
In (Pt/Co)n/FeMnmultilayers, the magnitude of exchange bias,HE, can be considerably enhanced by placing an ultrathin nonmagnetic Pt spacer between the multilayer (ML) and the antiferromagnetic(AFM) layer. [...]
2003 - 10.1063/1.1619562
Applied physics letters, Vol. 83, Issue 17 (October 2003) , p. 3537-3539  
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