Resultats globals: 12 registres trobats en 0.02 segons.
Articles, 12 registres trobats
Articles 12 registres trobats  1 - 10següent  anar al registre:
1.
12 p, 3.5 MB Magnetic order in 3D topological insulators-Wishful thinking or gateway to emergent quantumeffects? / Figueroa García, Adriana Isabel (Institut Català de Nanociència i Nanotecnologia) ; Hesjedal, Thorsten (University of Oxford. Department of Physics) ; Steinke, Nina-Juliane (Institut Laue-Langevin)
Three-dimensional topological insulators (TIs) are a perfectly tuned quantum-mechanical machinery in which counterpropagating and oppositely spin-polarized conduction channels balance each other on the surface of the material. [...]
2020 - 10.1063/5.0027987
Applied physics letters, Vol. 117, issue 15 (Oct. 2020) , art. 150502  
2.
8 p, 1.3 MB Evidence of exciton-libron coupling in chirally adsorbed single molecules / Doležal, Jiří (Charles University. Faculty of Mathematics and Physics) ; Canola, Sofia (Czech Academy of Sciences. Institute of Physics) ; Hapala, Prokop (Czech Academy of Sciences. Institute of Physics) ; de Campos Ferreira, Rodrigo Cezar (Czech Academy of Sciences. Institute of Physics) ; Merino, Pablo (Institut Català de Nanociència i Nanotecnologia) ; Švec, Martin (Czech Academy of Sciences. Institute of Organic Chemistry and Biochemistry)
Interplay between motion of nuclei and excitations has an important role in molecular photophysics of natural and artificial structures. Here we provide a detailed analysis of coupling between quantized librational modes (librons) and charged excited states (trions) on single phthalocyanine dyes adsorbed on a surface. [...]
2022 - 10.1038/s41467-022-33653-7
Nature communications, Vol. 13 (2022) , art. 6008  
3.
41 p, 1.9 MB Van der Waals heterostructures for spintronics and opto-spintronics / Sierra, Juan F. (Institut Català de Nanociència i Nanotecnologia) ; Fabian, Jaroslav (University of Regensburg. Institute for Theoretical Physics) ; Kawakami, Roland (Ohio State University. Department of Physics) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia) ; Valenzuela, Sergio O. (Institut Català de Nanociència i Nanotecnologia)
The large variety of 2D materials and their co-integration in van der Waals heterostructures enable innovative device engineering. In addition, their atomically thin nature promotes the design of artificial materials by proximity effects that originate from short-range interactions. [...]
2021 - 10.1038/s41565-021-00936-x
Nature Nanotechnology, Vol. 16, issue 8 (August 2021) , p. 856-868  
4.
29 p, 1.7 MB Coherent epitaxial semiconductor-ferromagnetic insulator InAs/EuS interfaces : band alignment and magnetic structure / Liu, Yu (Microsoft Quantum Materials Lab Copenhagen) ; Luchini, Alessandra (Niels Bohr Institute) ; Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia) ; Koch, Christian (Institut Català de Nanociència i Nanotecnologia) ; Schuwalow, Sergej (Niels Bohr Institute) ; Khan, Sabbir A. (Niels Bohr Institute) ; Stankevič, Tomas (Microsoft Quantum Materials Lab Copenhagen) ; Francoual, Sonia (Deutsches Elektronen-Synchrotron Desy) ; Mardegan, Jose R. L. (Deutsches Elektronen-Synchrotron Desy) ; Krieger, Jonas A. (Paul Scherrer Institut (Suïssa)) ; Strocov, Vladimir N. (Paul Scherrer Institut (Suïssa)) ; Stahn, Jochen (Paul Scherrer Institut (Suïssa)) ; Vaz, Carlos A. F. (Paul Scherrer Institut (Suïssa)) ; Ramakrishnan, Mahesh (Paul Scherrer Institut (Suïssa)) ; Staub, Urs (Paul Scherrer Institut (Suïssa)) ; Lefmann, Kim (Niels Bohr Institute) ; Aeppli, Gabriel (Paul Scherrer Institut (Suïssa)) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Krogstrup, Peter (Niels Bohr Institute)
Hybrid semiconductor-ferromagnetic insulator heterostructures are interesting due to their tunable electronic transport, self-sustained stray field, and local proximitized magnetic exchange. In this work, we present lattice-matched hybrid epitaxy of semiconductor-ferromagnetic insulator InAs/EuS heterostructures and analyze the atomic-scale structure and their electronic and magnetic characteristics. [...]
2020 - 10.1021/acsami.9b15034
ACS applied materials & interfaces, Vol. 12, issue 7 (Feb. 2020) , p. 8780-8787  
5.
27 p, 986.9 KB Magnetism, spin dynamics, and quantum transport in two-dimensional systems / Savero Torres, Williams Fernando (Institut Català de Nanociència i Nanotecnologia) ; Sierra, Juan F. (Institut Català de Nanociència i Nanotecnologia) ; Benítez, L. Antonio (Institut Català de Nanociència i Nanotecnologia) ; Bonell, Frédéric (Université Grenoble-Alpes) ; Garcia, José H. (Institut Català de Nanociència i Nanotecnologia) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia) ; Valenzuela, Sergio O. (Institut Català de Nanociència i Nanotecnologia)
Two-dimensional (2D) quantum materials offer a unique platform to explore mesoscopic phenomena driven by interfacial and topological effects. Their tunable electric properties and bidimensional nature enable their integration into sophisticated heterostructures with engineered properties, resulting in the emergence of new exotic phenomena not accessible in other platforms. [...]
2020 - 10.1557/mrs.2020.121
MRS Bulletin, Vol. 45, issue 5 (May 2020) , p. 357-365  
6.
34 p, 4.0 MB Gate electrostatics and quantum capacitance in ballistic graphene devices / Caridad, José M. (Danmarks Tekniske Universitet. Center for Nanostructured Graphene) ; Power, Stephen R. (Institut Català de Nanociència i Nanotecnologia) ; Shylau, Artsem A. (Danmarks Tekniske Universitet. Center for Nanostructured Graphene) ; Gammelgaard, Lene (Danmarks Tekniske Universitet. Center for Nanostructured Graphene) ; Jauho, Antti-Pekka (Danmarks Tekniske Universitet. Center for Nanostructured Graphene) ; Bøggild, Peter (Danmarks Tekniske Universitet. Center for Nanostructured Graphene)
We experimentally investigate the charge induction mechanism across gated, narrow, ballistic graphene devices with different degrees of edge disorder. By using magnetoconductance measurements as the probing technique, we demonstrate that devices with large edge disorder exhibit a nearly homogeneous capacitance profile across the device channel, close to the case of an infinitely large graphene sheet. [...]
2019 - 10.1103/PhysRevB.99.195408
Physical review B, Vol. 99, issue 19 (May 2019) , art. 195408  
7.
14 p, 3.6 MB Nanoparticle shape anisotropy and photoluminescence properties : Europium containing ZnO as a model case / Gerigk, Melanie (University of Konstanz) ; Ehrenreich, Philipp (University of Konstanz) ; Wagner, Markus R.. (Institut Català de Nanociència i Nanotecnologia) ; Wimmer, Ilona (University of Konstanz) ; Reparaz, Juan Sebastian (Institut Català de Nanociència i Nanotecnologia) ; Sotomayor Torres, Clivia M. (Institut Català de Nanociència i Nanotecnologia) ; Schmidt-Mende, Lukas (University of Konstanz) ; Polarz, Sebastian (University of Konstanz)
The precise control over electronic and optical properties of semiconductor (SC) materials is pivotal for a number of important applications like in optoelectronics, photocatalysis or in medicine. It is well known that the incorporation of heteroelements (doping as a classical case) is a powerful method for adjusting and enhancing the functionality of semiconductors. [...]
2015 - 10.1039/c5nr02550h
Nanoscale, Vol. 7, issue 40 (2015) , p. 16969-16982  
8.
11 p, 367.4 KB Lasing without population inversion : towards X-ray continuous wave laser emission / Mompart Penina, Jordi (Universitat Autònoma de Barcelona. Departament de Física) ; Ahufinger, Verònica (Universitat Autònoma de Barcelona. Departament de Física) ; Silva, F. (Universitat de València. Departament d'Òptica i Optometria i Ciències de la Visió) ; Corbalán, R. (Ramón) (Universitat Autònoma de Barcelona. Departament de Física)
This paper is devoted to lasing without population inversion in three and multi-level atomic configurations in interaction with a driving laser. First we discuss the interest and the current state-of-the-art of this phenomenon. [...]
Aquest article de revisió se centra en el fenomen de l'emissió làser sense inversió de població en configuracions atòmiques de tres o més nivells en interacció amb un làser de preparació. En primer lloc, es descriu breument l'interès i l'estat actual de la recerca al voltant d'aquest fenomen. [...]

2000
Contributions to science, Vol. 1, Núm. 4 (2000) , p. 423-433  
9.
4 p, 339.1 KB Bohm trajectories for the Monte Carlo simulation of quantum-based devices / Oriols, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; García García, Juan José (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Martín, Ferran, (Martín Antolín) (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; González, T. (Universidad de Salamanca. Departamento de Física Aplicada) ; Mateos, J. (Universidad de Salamanca. Departamento de Física Aplicada) ; Pardo, D. (Universidad de Salamanca. Departamento de Física Aplicada) ; American Physical Society
A generalization of the classical ensemble Monte Carlo(MC) device simulation technique is proposed to simultaneously deal with quantum-mechanical phase-coherence effects and scattering interactions in quantum-based devices. [...]
1998 - 10.1063/1.120899
Applied physics letters, Vol. 72, Issue 7 (February 1998) , p. 806-808  
10.
4 p, 474.9 KB Approach to study the noise properties in nanoscale electronic devices / Oriols, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Martín, Ferran, (Martín Antolín) (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; American Physical Society
An approach to study the noisecharacteristics in mesoscopic devices is presented. It extends, via quantum trajectories, the classical particle Monte Carlo techniques to devices where quantum nonlocal effects are important. [...]
2001 - 10.1063/1.1402651
Applied physics letters, Vol. 79, Issue 11 (July 2001) , p. 1703-1705  

Articles : 12 registres trobats   1 - 10següent  anar al registre:
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