Resultados globales: 10 registros encontrados en 0.02 segundos.
Artículos, Encontrados 9 registros
Documentos de investigación, Encontrados 1 registros
Artículos Encontrados 9 registros  
1.
8 p, 743.4 KB Ptsi clustering in silicon probed by transport spectroscopy / Mongillo, Massimo (Commissariat à l'énergie atomique et aux énergies alternatives. Institute for Nanoscience and Cryogenics) ; Spathis, Panayotis (Commissariat à l'énergie atomique et aux énergies alternatives. Institute for Nanoscience and Cryogenics) ; Katsaros, Georgios (Commissariat à l'énergie atomique et aux énergies alternatives. Institute for Nanoscience and Cryogenics) ; De Franceschi, Silvano (Commissariat à l'énergie atomique et aux énergies alternatives. Institute for Nanoscience and Cryogenics) ; Gentile, Pascal (Commissariat à l'énergie atomique et aux énergies alternatives. Institute for Nanoscience and Cryogenics) ; Rurali, Riccardo (Institut de Ciència de Materials de Barcelona) ; Cartoixà Soler, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Metal silicides formed by means of thermal annealing processes are employed as contact materials in microelectronics. Control of the structure of silicide/silicon interfaces becomes a critical issue when the characteristic size of the device is reduced below a few tens of nanometers. [...]
2014 - 10.1103/PhysRevX.3.041025
Physical review X, Vol. 3, issue. 4 (Dec. 2014) , art. e041025  
2.
7 p, 4.6 MB Valley-polarized quantum transport generated by gauge fields in graphene / Settnes, Mikkel (Danmarks Tekniske Universitet. Department of Photonics Engineering) ; Garcia, José H. (Institut Català de Nanociència i Nanotecnologia) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
We report on the possibility to simultaneously generate in graphene a bulk valley-polarized dissipative transport and a quantum valley Hall effect by combining strain-induced gauge fields and real magnetic fields. [...]
2017 - 10.1088/2053-1583/aa7cbd
2D Materials, Vol. 4, issue 3 (September 2017) , art. 31006  
3.
9 p, 1.1 MB Quantum transport in graphene in presence of strain-induced pseudo-Landau levels / Settnes, Mikkel (Danmarks Tekniske Universitet. Department of Photonics Engineering) ; Leconte, Nicolas (Institut Català de Nanociència i Nanotecnologia) ; Barrios-Vargas, José Eduardo (Institut Català de Nanociència i Nanotecnologia) ; Jauho, Antti-Pekka (Danmarks Tekniske Universitet. Department of Photonics Engineering) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
Wereport on mesoscopic transport fingerprints in disordered graphene caused by strain-field induced pseudomagnetic Landau levels (pLLs). Efficient numerical real space calculations of the Kubo formula are performed for an ordered network of nanobubbles in graphene, creating pseudomagnetic fields up to several hundreds of Tesla, values inaccessible by real magnetic fields. [...]
2016 - 10.1088/2053-1583/3/3/034005
2D Materials, Vol. 3, issue 3 (Jan. 2016) , art. 34005  
4.
15 p, 9.5 MB Addressing the Environment Electrostatic Effect on Ballistic Electron Transport in Large Systems : A QM/MM-NEGF Approach / Feliciano, Gustavo T. (Universidade Estadual Paulista (Brasil)) ; Sanz Navarro, Carlos (Institut Català de Nanociència i Nanotecnologia) ; Coutinho-Neto, Mauricio Domingues (Universidade Federal do ABC) ; Ordejón Rontomé, Pablo (Institut Català de Nanociència i Nanotecnologia) ; Scheicher, Ralph H. (Uppsala University) ; Rocha, Alexandre Reily (Universidade Estadual Paulista (Brasil))
The effects of the environment in nanoscopic materials can play a crucial role in device design. Particularly in biosensors, where the system is usually embedded in a solution, water and ions have to be taken into consideration in atomistic simulations of electronic transport for a realistic description of the system. [...]
2018 - 10.1021/acs.jpcb.7b03475
Journal of Physical Chemistry B, Vol. 122, Núm. 2 (January 2018) , p. 485-492  
5.
4 p, 330.0 KB Quantum Monte Carlo simulation of resonant tunneling diodes based on the Wigner distribution function formalism / García García, Juan José (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Martín, Ferran, (Martín Antolín) (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Oriols Pladevall, Xavier (Universitat Autònoma de Barcelona. Departament d’Enginyeria Electrònica) ; American Physical Society
A tool for the simulation of resonant tunneling diodes (RTDs) has been developed. This is based on the solution of the quantum Liouville equation in the active region of the device and the Boltzman transport equation in the regions adjacent to the contacts by means of a Monte Carlo algorithm. [...]
1998 - 10.1063/1.122800
Applied Physics Letters, Vol. 73, Num. 24 (December 1998) , p. 3539-3541  
6.
4 p, 339.1 KB Bohm trajectories for the Monte Carlo simulation of quantum-based devices / Oriols Pladevall, Xavier (Universitat Autònoma de Barcelona. Departament d’Enginyeria Electrònica) ; Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; García García, Juan José (Universitat Autònoma de Barcelona. Departament d’Enginyeria Electrònica) ; Martín, Ferran, (Martín Antolín) (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; González, T. (Universidad de Salamanca. Departament de Fı́sica Aplicada) ; Mateos, J. (Universidad de Salamanca. Departament de Fı́sica Aplicada) ; Pardo, D. (Universidad de Salamanca. Departament de Fı́sica Aplicada) ; American Physical Society
A generalization of the classical ensemble Monte Carlo(MC) device simulation technique is proposed to simultaneously deal with quantum-mechanical phase-coherence effects and scattering interactions in quantum-based devices. [...]
1998 - 10.1063/1.120899
Applied Physics Letters, Vol. 72, Issue 7 (February 1998) , p. 806-808  
7.
4 p, 336.0 KB Simulation of multilayered resonant tunneling diodes using coupled Wigner and Boltzmann distribution function approaches / García García, Juan José (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Martín, Ferran, (Martín Antolín) (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; American Physical Society
From a coupling model between the Boltzmann transport equation and the quantum Liouville equation, we have developed a simulator based on the Wigner distribution function (WDF) approach that can be applied to resonant tunneling diodes (RTDs) and other vertical transport quantum devices. [...]
2000 - 10.1063/1.1328100
Applied Physics Letters, Vol. 77, Issue 21 (November 2000) , p. 3412-3414  
8.
4 p, 695.9 KB Bidirectional resonant tunneling spin pump / Ting, David Z. -Y. (California Institute of Technology. Jet Propulsion Laboratory) ; Cartoixà Soler, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; American Physical Society
We propose a mechanism for achieving bidirectional spin pumping in conventional nonmagnetic semiconductorresonant tunnelingheterostructures under zero magnetic field. The device is designed specifically to take advantage of the special spin configuration described by the Rashba effect in asymmetric quantum wells. [...]
2003 - 10.1063/1.1602158
Applied Physics Letters, Vol. 83, Issue 7 (August 2003) , p. 1391-1393  
9.
5 p, 1.1 MB Quantum size effects in hafnium-oxide resistive switching / Long, Shibing (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Lian, Xiaojuan (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Cagli, Carlo (CEA-LETI (Grenoble, França)) ; Cartoixà Soler, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Rurali, Riccardo (Institut de Ciència de Materials de Barcelona) ; Miranda, Enrique Alberto (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Jiménez Jiménez, David (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Perniola, Luca (CEA-LETI (Grenoble, França)) ; Liu, Ming (Chinese Academy of Sciences. Laboratory of Nanofabrication and Novel Device Integration (Beijing, Xina)) ; American Physical Society
Discrete changes of conductance of the order of G0 = 2e2/h reported during the unipolar reset transitions of Pt/HfO2/Pt structures are interpreted as the signature of atomic-size variations of the conducting filament (CF) nanostructure. [...]
2013 - 10.1063/1.4802265
Applied Physics Letters, Vol. 102, Issue 18 (May 2013) , p. 183505/1-183505/4  

Documentos de investigación Encontrados 1 registros  
1.
118 p, 6.2 MB Quantum many-particle electron transport in time-dependent systems with Bohmian trajectories / Alarcón Pardo, Alfonso ; Oriols Pladevall, Xavier, dir. ; Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica
Es conocido que a escalas nanométricas se debe tratar con en el problema de muchas partículas a la hora de estudiar dispositivos electrónicos. Es estos escenarios, la ecuación de Schrödinger dependiente del tiempo para muchas partículas solo se puede resolver para unos pocos grados de libertad. [...]
It is known that at nanoscale regime we must deal with the many-particle problem in order to study electronic devices. In this scenario, the time-dependent many-particle Schrödinger equation is only directly solvable for very few degrees of freedom. [...]

[Barcelona] : Universitat Autònoma de Barcelona, 2011  

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