Resultats globals: 4 registres trobats en 0.02 segons.
Articles, 4 registres trobats
Articles 4 registres trobats  
1.
7 p, 481.4 KB Experimental time evolution study of the HfO2-based IMPLY gate operation / Maestro Izquierdo, Marcos (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Martin Martinez, Javier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Crespo Yepes, Albert (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Escudero, Manel (Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica) ; Rodríguez Martínez, Rosana (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Aymerich Humet, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Rubio, Antonio 1954- (Universitat Politècnica de Catalunya. Departament d'Enginyeria Electrònica)
In the last years, memristor devices have been proposed as key elements to develop a new paradigm to implement logic gates. In particular, the memristor-based material implication (IMPLY) gate has been presented as a potential powerful basis for logic applications. [...]
2018 - 10.1109/TED.2017.2778315
IEEE Transactions on Electron Devices, Vol. 65, issue 2 (Feb. 2018) , p. 404-410  
2.
14 p, 2.1 MB Differential tDCS and tACS Effects on Working Memory-Related Neural Activity and Resting-State Connectivity / Abellaneda-Pérez, Kilian (Institut d'Investigacions Biomèdiques August Pi i Sunyer) ; Vaqué-Alcázar, Lídia (Institut d'Investigacions Biomèdiques August Pi i Sunyer) ; Perellón-Alfonso, Ruben (Institut d'Investigacions Biomèdiques August Pi i Sunyer) ; Bargalló, Núria (Hospital Clínic i Provincial de Barcelona) ; Kuo, Min-Fang (Leibniz Research Centre for Working Environment and Human Factors) ; Pascual Leone, Álvaro (Institut Germans Trias i Pujol. Institut Guttmann) ; Nitsche, Michael A. (Department of Neurology, University Medical Hospital Bergmannsheil) ; Bartrés-Faz, David (Institut Germans Trias i Pujol. Institut Guttmann) ; Universitat Autònoma de Barcelona
Transcranial direct and alternating current stimulation (tDCS and tACS, respectively) entail capability to modulate human brain dynamics and cognition. However, the comparability of these approaches at the level of large-scale functional networks has not been thoroughly investigated. [...]
2020 - 10.3389/fnins.2019.01440
Frontiers in Neuroscience, Vol. 13 (january 2020)  
3.
30 p, 3.6 MB Conductance quantization in resistive random access memory / Li, Yang (Chinese Academy of Sciences. Institute of Microelectronics (Beijing)) ; Long, Shibing (Chinese Academy of Sciences. Institute of Microelectronics (Beijing)) ; Liu, Yang (University of Science and Technology Beijing. Department of Materials Physics and Chemistry) ; Hu, Chen (University of Science and Technology Beijing. Department of Materials Physics and Chemistry) ; Teng, Jiao (University of Science and Technology Beijing. Department of Materials Physics and Chemistry) ; Liu, Qi (Chinese Academy of Sciences. Institute of Microelectronics (Beijing)) ; Lv, Hangbing (Chinese Academy of Sciences. Institute of Microelectronics (Beijing)) ; Suñé, Jordi 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Liu, Ming (Chinese Academy of Sciences. Institute of Microelectronics (Beijing))
The intrinsic scaling-down ability, simple metal-insulator-metal (MIM) sandwich structure, excellent performances, and complementary metal-oxide-semiconductor (CMOS) technology-compatible fabrication processes make resistive random access memory (RRAM) one of the most promising candidates for the next-generation memory. [...]
2015 - 10.1186/s11671-015-1118-6
Nanoscale Research Letters, Vol. 10 (December 2015) , art. 420  
4.
6 p, 228.6 KB Resistive switching like-behavior in MOSFETs with ultra-thin HfSiON dielectric gate stack : pMOS and nMOS comparison and reliability implications / Crespo Yepes, Albert (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Martin Martinez, Javier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Rodríguez Martínez, Rosana (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Aymerich Humet, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
In this work, the Resistive Switching (RS) phenomenon in n and pMOSFETs with ultrathin Hf based high-k dielectric is studied. Two different conductive levels, a high (HRS) and a low (LRS) resistance states can be distinguished in the dielectric. [...]
2013 - 10.1016/j.microrel.2013.07.046
Microelectronics reliability, Vol. 53, No. 9-11 (Sep.-Nov. 2013) , p. 1247-1251  

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