Results overview: Found 5 records in 0.02 seconds.
Articles, 5 records found
Articles 5 records found  
1.
11 p, 2.8 MB Field effect enhancement in buffered quantum nanowire networks / Krizek, Filip (Center for Quantum Devices and Station Q Copenhagen) ; Sestoft, Joachim E. (Center for Quantum Devices and Station Q Copenhagen) ; Aseev, Pavel (Delft University of Technology) ; Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia) ; Vaitiekenas, Saulius (Center for Quantum Devices and Station Q Copenhagen) ; Casparis, Lucas (Center for Quantum Devices and Station Q Copenhagen) ; Khan, Sabbir A. (Center for Quantum Devices and Station Q Copenhagen) ; Liu, Yu (Center for Quantum Devices and Station Q Copenhagen) ; Stankevič, Tomas (Center for Quantum Devices and Station Q Copenhagen) ; Whiticar, A. M. (Center for Quantum Devices and Station Q Copenhagen) ; Fursina, Alexandra (Delft University of Technology) ; Boekhout, Frenk (QuTech and Netherlands Organization for Applied Scientific Research) ; Koops, René (QuTech and Netherlands Organization for Applied Scientific Research) ; Uccelli, Emanuele (QuTech and Netherlands Organization for Applied Scientific Research) ; Kouwenhoven, Leo P. (Delft University of Technology) ; Marcus, Charles M. (Center for Quantum Devices and Station Q Copenhagen) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Krogstrup, Peter (Center for Quantum Devices and Station Q Copenhagen)
III-V semiconductor nanowires have shown great potential in various quantum transport experiments. However, realizing a scalable high-quality nanowire-based platform that could lead to quantum information applications has been challenging. [...]
2018 - 10.1103/PhysRevMaterials.2.093401
Physical review materials, Vol. 2, Issue 9 (September 2018) , art. 93401  
2.
13 p, 8.2 MB The Role of polarity in nonplanar semiconductor nanostructures / De La Mata, Maria (Institut Català de Nanociència i Nanotecnologia) ; Zamani, Reza (École Polytechnique Fédérale de Lausanne. Interdisciplinary Center for Electron Microscopy) ; Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia) ; Eickhoff, Martin (University of Bremen. Institut für Festkörperphysik) ; Xiong, Qihua (Nanyang Technological University. School of Physical and Mathematical Sciences) ; Fontcuberta i Morral, Anna (École Polytechnique Fédérale de Lausanne) ; Caroff, Philippe (Delft University of Technology) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia)
The lack of mirror symmetry in binary semiconductor compounds turns them into polar materials, where two opposite orientations of the same crystallographic direction are possible. Interestingly, their physical properties (e. [...]
2019 - 10.1021/acs.nanolett.9b00459
Nano letters, Vol. 19, issue 6 (June 2019) , p. 3396-3408  
3.
9 p, 7.7 MB Low-Temperature Growth of Axial Si/Ge Nanowire Heterostructures Enabled by Trisilane / Hui, Ho Yee (Georgia Institute of Technology (Atlanta, Estats Units d'Amèrica)) ; De La Mata, Maria (Institut Català de Nanociència i Nanotecnologia) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Filler, Michael A. (Georgia Institute of Technology (Atlanta, Estats Units d'Amèrica))
Axial Si/Ge heterostructure nanowires, despite their promise in applications ranging from electronics to thermal transport, remain notoriously difficult to synthesize. Here, we grow axial Si/Ge heterostructures at low temperatures using a Au catalyst with a combination of trisilane and digermane. [...]
2017 - 10.1021/acs.chemmater.6b03952
Chemistry of materials, Vol. 29, Núm. 8 (April 2017) , p. 3397-3402  
4.
4 p, 563.1 KB Ordered arrays of quantum wires through hole patterning : ab initio and empirical electronic structure calculations / Rurali, Riccardo (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Cartoixà Soler, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; American Physical Society
We propose an approach to the fabrication of one-dimensional nanostructures, based on the design of a pattern of channels onto a semiconductor surface. The feasibility of this approach is demonstrated by means of ab initio and empirical electronic structure calculations. [...]
2007 - 10.1063/1.2696774
Applied physics letters, Vol. 90, Issue 8 (February 2007) , p. 083118/1-083118/3  
5.
4 p, 423.1 KB Tuning the band gap of semiconducting carbon nanotube by an axial magnetic field / Fedorov, G. (Georgetown University. Department of Physics) ; Barbara, P. (Georgetown University. Department of Physics) ; Smirnov, D. (Florida State University. National High Magnetic Field Laboratory) ; Jiménez Jiménez, David (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Roche, Stephan (Institució Catalana de Recerca i Estudis Avançats) ; American Physical Society
We have investigated the magnetic field dependence of transfer characteristics of a device fabricated in a configuration of a field-effect transistor with a conduction channel formed by a semiconducting multiwalled carbon nanotube. [...]
2010 - 10.1063/1.3360214
Applied physics letters, Vol. 96, Issue 13 (March 2010) , p. 132101/1-132101/3  

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