Resultados globales: 72 registros encontrados en 0.03 segundos.
Artículos, Encontrados 24 registros
Documentos de investigación, Encontrados 48 registros
Artículos Encontrados 24 registros  1 - 10siguientefinal  ir al registro:
1.
33 p, 4.8 MB Heat transport control and thermal characterization of low-dimensional mMaterials : a review / Sachat, Alexandros el (Institut Català de Nanociència i Nanotecnologia) ; Alzina, Francesc (Institut Català de Nanociència i Nanotecnologia) ; Sotomayor Torres, Clivia M. (Institut Català de Nanociència i Nanotecnologia) ; Chávez Ángel, Emigdio (Institut Català de Nanociència i Nanotecnologia)
Heat dissipation and thermal management are central challenges in various areas of science and technology and are critical issues for the majority of nanoelectronic devices. In this review, we focus on experimental advances in thermal characterization and phonon engineering that have drastically increased the understanding of heat transport and demonstrated efficient ways to control heat propagation in nanomaterials. [...]
2021 - 10.3390/nano11010175
Nanomaterials, Vol. 11, issue 1 (Jan. 2021) , art. 175  
2.
10 p, 3.8 MB GaAs nanoscale membranes : prospects for seamless integration of III-Vs on silicon / Raya, Andrés M. (Instituto de Micro y Nanotecnología) ; Friedl, Martin (École Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia) ; Dubrovskii, Vladimir G. (ITMO University) ; Francaviglia, Luca (École Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; Alén, Benito (Instituto de Micro y Nanotecnología) ; Morgan, Nicholas (École Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; Tütüncüoglu, Gözde (École Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; Ramasse, Quentin M. (University of Leeds. School of Physics) ; Fuster, David (Instituto de Micro y Nanotecnología) ; Llorens, José M. (Instituto de Micro y Nanotecnología) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Fontcuberta i Morral, Anna (École Polytechnique Fédérale de Lausanne. Institute of Physics)
The growth of compound semiconductors on silicon has been widely sought after for decades, but reliable methods for defect-free combination of these materials have remained elusive. Recently, interconnected GaAs nanoscale membranes have been used as templates for the scalable integration of nanowire networks on III-V substrates. [...]
2020 - 10.1039/c9nr08453c
Nanoscale, Vol. 12, issue 2 (2020) , p. 815-824  
3.
15 p, 1.1 MB Wide and ultra-wide bandgap oxides : where paradigm-shift photovoltaics meets transparent power electronics / Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia) ; Chikoidze, Ekaterine (Université de Versailles Saint Quentin en Yvelines - CNRS) ; Jennings, M.R. (University of Warwick) ; Russell, Stephen A.O. (University of Warwick) ; Teherani, Féréchteh Hosseini (Nanovation) ; Bove, Philippe (Nanovation) ; Sandana, Vinod E. (Nanovation) ; Rogers, David J. (Nanovation)
Oxides represent the largest family of wide bandgap (WBG) semiconductors and also offer a huge potential range of complementary magnetic and electronic properties, such as ferromagnetism, ferroelectricity, antiferroelectricity and high-temperature superconductivity. [...]
2018 - 10.1117/12.2302576
Proceedings of SPIE, Vol. 10533 (February 2018) , art. 105331Q  
4.
36 p, 830.9 KB Giant bulk photovoltaic effect in solar cell architectures with ultra-wide bandgap Ga2O3 transparent conducting electrodes / Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia) ; Chikoidze, Ekaterine (Université de Versailles Saint Quentin en Yvelines - CNRS) ; Dumont, Yves (Université de Versailles Saint Quentin en Yvelines - CNRS) ; Jennings, M.R. (Swansea University) ; Russell, Stephen A. O. (University of Warwick) ; Vales Castro, Pablo (Institut Català de Nanociència i Nanotecnologia) ; Catalan, Gustau (Institut Català de Nanociència i Nanotecnologia) ; Lira-Cantú, Monica (Institut Català de Nanociència i Nanotecnologia) ; Ton-That, C. (University of Technology Sydney) ; Teherani, Féréchteh Hosseini (Nanovation) ; Sandana, Vinod E. (Nanovation) ; Bove, Philippe (Nanovation) ; Rogers, David J. (Nanovation)
The use of ultra-wide bandgap transparent conducting beta gallium oxide (β-GaO) thin films as electrodes in ferroelectric solar cells is reported. In a new material structure for energy applications, we report a solar cell structure (a light absorber sandwiched in between two electrodes - one of them - transparent) which is not constrained by the Shockley-Queisser limit for open-circuit voltage (V) under typical indoor light. [...]
2019 - 10.1016/j.mtener.2019.100350
Materials today energy, Vol. 14 (December 2019) , art. 100350  
5.
22 p, 2.5 MB Optimizing the yield of A-polar GaAs nanowires to achieve defect-free zinc blende structure and enhanced optical functionality / Zamani, Mahdi (École Polytechnique Fédérale de Lausanne) ; Tütüncüoglu, Gözde (École Polytechnique Fédérale de Lausanne) ; Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia) ; Francaviglia, Luca (École Polytechnique Fédérale de Lausanne) ; Güniat, Lucas (École Polytechnique Fédérale de Lausanne) ; Ghisalberti, Lea (École Polytechnique Fédérale de Lausanne) ; Potts, Heidi A. (École Polytechnique Fédérale de Lausanne) ; Friedl, Martin (École Polytechnique Fédérale de Lausanne) ; Markov, Edoardo. (École Polytechnique Fédérale de Lausanne) ; Kim, Wonjong (École Polytechnique Fédérale de Lausanne) ; Leran, Jean-Baptiste (École Polytechnique Fédérale de Lausanne) ; Dubrovskii, Vladimir G. (ITMO University) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Fontcuberta i Morral, Anna (École Polytechnique Fédérale de Lausanne)
Compound semiconductors exhibit an intrinsic polarity, as a consequence of the ionicity of their bonds. Nanowires grow mostly along the (111) direction for energetic reasons. Arsenide and phosphide nanowires grow along (111)B, implying a group V termination of the (111) bilayers. [...]
2018 - 10.1039/c8nr05787g
Nanoscale, Vol. 10, Issue 36 (September 2018) , p. 17080-17091  
6.
7 p, 720.6 KB Raman thermometry analysis : Modelling assumptions revisited / Jaramillo Fernández, Juliana (KTH Royal Institute of Technology) ; Chávez Ángel, Emigdio (Institut Català de Nanociència i Nanotecnologia) ; Sotomayor Torres, Clivia M. (Institut Català de Nanociència i Nanotecnologia)
In Raman thermometry, several assumptions are made to model the heat conduction and to extract the thermal conductivity of the samples from the measured data. In this work, the heat conduction in bulk and mesa-like samples was investigated by numerical simulation and measured by the temperature-induced Raman shift method, to study the range of applicability of these assumptions. [...]
2018 - 10.1016/j.applthermaleng.2017.11.033
Applied thermal engineering, Vol. 130 (February 2018) , p. 1175-1181  
7.
18 p, 1.8 MB Unraveling the origin of magnetism in mesoporous Cu-doped SnO₂ magnetic semiconductor / Fan, Junpeng (Universitat Autònoma de Barcelona. Departament de Física) ; Menéndez Dalmau, Enric (Universitat Autònoma de Barcelona. Departament de Física) ; Guerrero Hernández, Miguel (Universitat Autònoma de Barcelona. Departament de Física) ; Quintana Romero, Alberto (Universitat Autònoma de Barcelona. Departament de Física) ; Weschke, Eugen (Helmholtz-Zentrum Berlin für Materialien und Energie) ; Pellicer Vilà, Eva M. (Eva Maria) (Universitat Autònoma de Barcelona. Departament de Física) ; Sort Viñas, Jordi (Universitat Autònoma de Barcelona. Departament de Física)
The origin of magnetism in wide-gap semiconductors doped with non-ferromagnetic 3d transition metals still remains intriguing. In this article, insights in the magnetic properties of ordered mesoporous Cu-doped SnO₂ powders, prepared by hard-templating, have been unraveled. [...]
2017 - 10.3390/nano7110348
Nanomaterials, Vol. 7, issue 11 (Nov. 2017) , art. 348  
8.
4 p, 448.3 KB Monitoring defects in III-V materials : a nanoscale CAFM study / Iglesias, V. (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Wu, Q. (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Porti i Pujal, Marc (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Bersuker, G. (Sematech) ; Cordes, A. (Sematech)
The implementation of high mobility devices requires growing III-V materials on silicon substrates. However, due to the lattice mismatch between these materials, III-V semiconductors tend to develop structural defects affecting device electrical characteristics. [...]
2015 - 10.1016/j.mee.2015.04.058
Microelectronic engineering, Vol. 147 (Nov. 2015) , p. 176-179  
9.
5 p, 1.9 MB Gate current analysis of AlGaN/GaN on silicon heterojunction transistors at the nanoscale / Fontserè Recuenco, Abel (Centro Nacional de Microelectrónica) ; Perez-Tomas, Amador (Centro Nacional de Microelectrónica) ; Placidi, Marcel (Centro Nacional de Microelectrónica) ; Aguiló Llobet, Jordi (Universitat Autònoma de Barcelona. Departament de Microelectrònica i Sistemes Electrònics) ; Baron, N. (Centre national de la recherche scientifique (França)) ; Chenot, S. (Centre national de la recherche scientifique (França)) ; Cordier, Y. (Centre national de la recherche scientifique (França)) ; Moreno, J. C. (Centre national de la recherche scientifique (França)) ; Iglesias Santiso, Vanessa (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Porti i Pujal, Marc (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Bayerl, Albin (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Lanza Martínez, Mario (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
The gate leakage current of AlGaN/GaN (on silicon)high electron mobility transistor(HEMT) is investigated at the micro and nanoscale. The gate current dependence (25-310 °C) on the temperature is used to identify the potential conduction mechanisms, as trap assisted tunneling or field emission. [...]
2012 - 10.1063/1.4748115
Applied physics letters, Vol. 101, Issue 9 (August 2012) , p. 093505/1-093505/4  
10.
4 p, 752.7 KB Role of the microstructure on the magnetic properties of Co-doped ZnO nanoparticles / Martínez, Benjamín (Institut de Ciència de Materials de Barcelona) ; Sandiumenge Ortiz, Felip (Institut de Ciència de Materials de Barcelona) ; Balcells Argemí, Lluís (Institut de Ciència de Materials de Barcelona) ; Arbiol i Cobos, Jordi (Universitat de Barcelona. Serveis Científics) ; Sibieude, F. (Institut de science et génie des Matériaux et Procédés (Font Romeu, França)) ; Monty, C. (Institut de science et génie des Matériaux et Procédés (Font Romeu, França)) ; American Physical Society
We report on the magnetic and structural properties of Co-doped ZnO nanoparticles prepared by the vaporization-condensation method in a solar reactor. X-ray diffraction data and high-resolution electron microscopy (HREM) confirm the total absence of metallic Co clusters or any other phase different from würtzite-type ZnO. [...]
2005 - 10.1063/1.1880433
Applied physics letters, Vol. 86, Issue 10 (March 2005) , p. 103113/1-103113/3  

Artículos : Encontrados 24 registros   1 - 10siguientefinal  ir al registro:
Documentos de investigación Encontrados 48 registros  1 - 10siguientefinal  ir al registro:
1.
209 p, 10.8 MB Solution-processed organic field-effect transistors : from fundamental aspects to applications / Temiño Gutiérrez, Inés ; Mas Torrent, Marta, dir. ; Sort Viñas, Jordi, dir. ; Universitat Autònoma de Barcelona. Institut de Ciència de Materials de Barcelona
En esta tesis hemos estudiado varios factores relacionados con los transistores orgánicos de efecto campo (OFETs) procesados por solución, incluyendo su fabricación, su caracterización eléctrica y posibles aplicaciones, especialmente en el campo de sensores físicos. [...]
In this thesis we have studied several aspects related to organic field-effect transistors (OFETs) printed from solution, including their fabrication, their electrical characterisation, and further applications, especially in the field of physical sensing. [...]

[Barcelona] : Universitat Autònoma de Barcelona, 2020.  
2.
247 p, 8.2 MB A bird's-eye view of charge and spin density waves from first principles calculations / Guster, Ionel Bogdan ; Alonso Pruneda, J. Miguel, (José Miguel) dir. ; Ordejón Rontomé, Pablo, dir. ; Canadell, Enric, 1950-, dir. ; Institut Català de Nanociència i Nanotecnologia (ICN2)
Aquesta tesi te com a objecte l'estudi de l'estructura electrònica de metalls de baixa dimensionalitat tant en la forma de monocapes com en el bulk. Aquest tipus de metalls sovint presenten inestabilitats electròniques del tipus ona de densitat de càrrega (CDW) o de espí (SDW). [...]
This thesis deals with the electronic structure of low dimensional metals in the form of either single layers or bulk. Low dimensional metals often exhibit electronic instabilities like charge or spin density waves. [...]

[Barcelona] : Universitat Autònoma de Barcelona, 2019.  
3.
207 p, 15.8 MB Advances on the synthesis of MOFs at scale / Çamur, Ceren ; Maspoch Comamala, Daniel, dir. ; Imaz, Inhar, dir. ; Busqué Sánchez, Félix, dir. ; Universitat Autònoma de Barcelona. Departament de Química
La presente tesis doctoral ha sido dedicada al desarrollo y optimización de metodologías para la síntesis de MOFs en medio acuoso, así como su conformación y el avance hacia la producción a gran escala de estos materiales. [...]
The present PhD Thesis has been dedicated to the development of basic knowledge on aqueous synthesis methodologies of MOFs and their shaping in order to make advances towards the large scale production of MOFs. [...]

[Barcelona] : Universitat Autònoma de Barcelona, 2019.  
4.
240 p, 10.6 MB Electrolyte-gated organic field-effect transistors based on organic semiconductor : insulating polymer blends / Zhang, Qiaoming ; Mas Torrent, Marta, dir. ; Leonardi, Francesca, dir. ; Sort Viñas, Jordi, dir. ; Universitat Autònoma de Barcelona. Institut de Ciència de Materials de Barcelona
La presente tesis doctoral se centra en la fabricación, optimización, caracterización y aplicación de capas activas compuestas de una mezcla de semiconductor orgánico y un polímero aislante (OSC:PS) en transistores orgánicos de efecto de campo (EGOFET) con puerta-electrolítica. [...]
The present Doctoral Thesis is focused on the fabrication, optimization, characterization and application of organic semiconductors:insulating polymer blends for electrolyte-gated organic field-effect transistors (EGOFETs), which are considered a promising sensing platform in the field of bioelectronics due to their ability to operate in common electrolyte media. [...]

[Barcelona] : Universitat Autònoma de Barcelona, 2019.  
5.
230 p, 17.3 MB Influence of organic semiconductors morphology, structure and processability on organic field-effect transistors performance / Campos García, Antonio ; Mas Torrent, Marta, dir. ; Pleixats i Rovira, Roser, dir. ; Universitat Autònoma de Barcelona. Institut de Ciència de Materials de Barcelona
En esta tesis hemos estudiado como la manera de procesar los semiconductores orgánicos puede afectar a su morfología y estructure cristalina. Semiconductores orgánicos de tipo p y n han sido empleados como capas activas en transistores orgánicos de efecto campo (OFETs). [...]
In this thesis we have studied how the processing of organic semiconductors can affect their morphology and crystal structure. p-Type and n-type organic semiconductors have been employed as active layers in Organic Field-Effect Transistors (OFETs). [...]

[Barcelona] : Universitat Autònoma de Barcelona, 2019.  
6.
334 p, 22.9 MB Confining Reactions in a Droplet : synthesis of MOFs, COFs and Composites using Spray-Drying / Garzon-Tovar, Luis ; Maspoch Comamala, Daniel, dir. ; Imaz, Inhar, dir. ; Busqué Sánchez, Félix, dir. ; Universitat Autònoma de Barcelona. Departament de Química
Una nueva era en la química de los materiales inició con el descubrimiento de las redes Metal-Orgánicas (MOFs, por sus siglas en inglés) y las redes Orgánicas-Covalentes (COFs, por sus siglas en inglés). [...]
A new age in materials chemistry started with the discovery of Metal-Organic Frameworks and Covalent-Organic frameworks. In particular, the introduction of reticular chemistry represented a revolutionary strategy that gave chemists infinite opportunities toward the design and construction of novel functional materials with exceptional properties, such as their high porosity, high structural/compositional flexibility and low densities (for COFs). [...]

[Barcelona] : Universitat Autònoma de Barcelona, 2018.  
7.
199 p, 8.4 MB Micro and nano-electro-mechanical devices in the CMOS back end and their applications / Riverola Borreguero, Martín ; Barniol i Beumala, Núria, dir. ; Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica
Recentment, l'escalat de la tecnologia complementaria metall-òxid-semiconductor (CMOS) està arribant a límits fonamentals, principalment degut a les fuites de corrent no nul·les que el transistor presenta. [...]
Recently, several new emerging devices are starting to be explored because the traditional down-scaling approach of the complementary metal-oxide-semiconductor (CMOS) technology (often called "More Moore") is reaching fundamental limits; mainly due to non-zero transistor off-state leakage. [...]

[Bellaterra] : Universitat Autònoma de Barcelona, 2018.  
8.
196 p, 6.6 MB Modelling, design and integration of new differential architectures for M/NEMS resonant sensors / Prache, Pierre ; Juillard, Jérôme, dir. ; Barniol i Beumala, Núria, dir. ; Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica
Los sensores M/NEMS resonantes, gracias a su pequeño tamaño, a su bajo consumo y a su carácter quasi-digital (siendo generalmente la señal de salida un tono frecuencial), se han convertido en herramientas muy usadas en sistemas embebidos portátiles y de a bordo tales como en telefonía móvil (es decir, en smartphones) o en la industria aeroespacial. [...]
M/NEMS resonant sensors, due to their small size, consumption and quasi-digital output (a frequency most of the time) are useful tools for on-board systems, from smartphones to aeronautic technology. [...]

[Barcelona] : Universitat Autònoma de Barcelona, 2017.  
9.
188 p, 3.9 MB Thermal transport in semiconductors : first principles and phonon hydrodynamics / Torres Alvarez, Pol ; Àlvarez Calafell, Francesc Xavier, dir. (Universitat Autònoma de Barcelona. Departament de Física) ; Cartoixà Soler, Xavier, dir. ; Universitat Autònoma de Barcelona. Departament de Física
La majoria dels aparells electrònics utilitzats avui en dia tenen components basats en materials semiconductors, els quals poden ser utilitzats en un ampli rang d'aplicacions, des de transistors fins a generadors termoelèctrics o fotovoltaics. [...]
Most of the daily life devices and electronic tools have components based on semiconductor materials, which can be used for a wide range of applications, from transistors to photovoltaic or thermoelectric energy sources. [...]

[Barcelona] : Universitat Autònoma de Barcelona, 2017.  
10.
163 p, 6.7 MB Synthesis and advanced structural and magnetic characterization of mesoporous transition metal-doped SnO₂ powders and films / Fan, Junpeng ; Pellicer Vilà, Eva M., (Eva Maria) dir. ; Sort Viñas, Jordi, dir. ; Universitat Autònoma de Barcelona. Departament de Física
Aquesta Tesi doctoral comprèn la síntesi mitjançant nanoemmotllament (de l'anglès, nanocasting) i autoassemblatge per evaporació induïda (de l'anglès, evaporation-induced self-assembly) i la caracterització exhaustiva de pols i capes de SnO2 mesoporós dopat amb Ni i Cu. [...]
This Thesis dissertation covers the synthesis by means of nanocasting and evaporation-induced self-assembly (EISA) methods as well as the advanced characterization of Ni, Cu-doped mesoporous SnO2 powders and films. [...]

[Barcelona] : Universitat Autònoma de Barcelona, 2017.  

Documentos de investigación : Encontrados 48 registros   1 - 10siguientefinal  ir al registro:
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