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10 p, 3.8 MB |
GaAs nanoscale membranes : prospects for seamless integration of III-Vs on silicon
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Raya, Andrés M. (Instituto de Micro y Nanotecnología) ;
Friedl, Martin (École Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ;
Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia) ;
Dubrovskii, Vladimir G. (ITMO University) ;
Francaviglia, Luca (École Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ;
Alén, Benito (Instituto de Micro y Nanotecnología) ;
Morgan, Nicholas (École Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ;
Tütüncüoglu, Gözde (École Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ;
Ramasse, Quentin M. (University of Leeds. School of Physics) ;
Fuster, David (Instituto de Micro y Nanotecnología) ;
Llorens, José M. (Instituto de Micro y Nanotecnología) ;
Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ;
Fontcuberta i Morral, Anna (École Polytechnique Fédérale de Lausanne. Institute of Physics)
The growth of compound semiconductors on silicon has been widely sought after for decades, but reliable methods for defect-free combination of these materials have remained elusive. Recently, interconnected GaAs nanoscale membranes have been used as templates for the scalable integration of nanowire networks on III-V substrates. [...]
2020 - 10.1039/c9nr08453c
Nanoscale, Vol. 12, issue 2 (2020) , p. 815-824
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3.
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15 p, 1.1 MB |
Wide and ultra-wide bandgap oxides : where paradigm-shift photovoltaics meets transparent power electronics
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Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia) ;
Chikoidze, Ekaterine (Université de Versailles Saint Quentin en Yvelines - CNRS) ;
Jennings, M.R. (University of Warwick) ;
Russell, Stephen A.O. (University of Warwick) ;
Teherani, Féréchteh Hosseini (Nanovation) ;
Bove, Philippe (Nanovation) ;
Sandana, Vinod E. (Nanovation) ;
Rogers, David J. (Nanovation)
Oxides represent the largest family of wide bandgap (WBG) semiconductors and also offer a huge potential range of complementary magnetic and electronic properties, such as ferromagnetism, ferroelectricity, antiferroelectricity and high-temperature superconductivity. [...]
2018 - 10.1117/12.2302576
Proceedings of SPIE, Vol. 10533 (February 2018) , art. 105331Q
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36 p, 830.9 KB |
Giant bulk photovoltaic effect in solar cell architectures with ultra-wide bandgap Ga2O3 transparent conducting electrodes
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Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia) ;
Chikoidze, Ekaterine (Université de Versailles Saint Quentin en Yvelines - CNRS) ;
Dumont, Yves (Université de Versailles Saint Quentin en Yvelines - CNRS) ;
Jennings, M.R. (Swansea University) ;
Russell, Stephen A. O. (University of Warwick) ;
Vales Castro, Pablo (Institut Català de Nanociència i Nanotecnologia) ;
Catalan, Gustau (Institut Català de Nanociència i Nanotecnologia) ;
Lira-Cantú, Monica (Institut Català de Nanociència i Nanotecnologia) ;
Ton-That, C. (University of Technology Sydney) ;
Teherani, Féréchteh Hosseini (Nanovation) ;
Sandana, Vinod E. (Nanovation) ;
Bove, Philippe (Nanovation) ;
Rogers, David J. (Nanovation)
The use of ultra-wide bandgap transparent conducting beta gallium oxide (β-GaO) thin films as electrodes in ferroelectric solar cells is reported. In a new material structure for energy applications, we report a solar cell structure (a light absorber sandwiched in between two electrodes - one of them - transparent) which is not constrained by the Shockley-Queisser limit for open-circuit voltage (V) under typical indoor light. [...]
2019 - 10.1016/j.mtener.2019.100350
Materials today energy, Vol. 14 (December 2019) , art. 100350
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22 p, 2.5 MB |
Optimizing the yield of A-polar GaAs nanowires to achieve defect-free zinc blende structure and enhanced optical functionality
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Zamani, Mahdi (École Polytechnique Fédérale de Lausanne) ;
Tütüncüoglu, Gözde (École Polytechnique Fédérale de Lausanne) ;
Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia) ;
Francaviglia, Luca (École Polytechnique Fédérale de Lausanne) ;
Güniat, Lucas (École Polytechnique Fédérale de Lausanne) ;
Ghisalberti, Lea (École Polytechnique Fédérale de Lausanne) ;
Potts, Heidi A. (École Polytechnique Fédérale de Lausanne) ;
Friedl, Martin (École Polytechnique Fédérale de Lausanne) ;
Markov, Edoardo. (École Polytechnique Fédérale de Lausanne) ;
Kim, Wonjong (École Polytechnique Fédérale de Lausanne) ;
Leran, Jean-Baptiste (École Polytechnique Fédérale de Lausanne) ;
Dubrovskii, Vladimir G. (ITMO University) ;
Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ;
Fontcuberta i Morral, Anna (École Polytechnique Fédérale de Lausanne)
Compound semiconductors exhibit an intrinsic polarity, as a consequence of the ionicity of their bonds. Nanowires grow mostly along the (111) direction for energetic reasons. Arsenide and phosphide nanowires grow along (111)B, implying a group V termination of the (111) bilayers. [...]
2018 - 10.1039/c8nr05787g
Nanoscale, Vol. 10, Issue 36 (September 2018) , p. 17080-17091
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18 p, 1.8 MB |
Unraveling the origin of magnetism in mesoporous Cu-doped SnO₂ magnetic semiconductor
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Fan, Junpeng (Universitat Autònoma de Barcelona. Departament de Física) ;
Menéndez Dalmau, Enric (Universitat Autònoma de Barcelona. Departament de Física) ;
Guerrero Hernández, Miguel (Universitat Autònoma de Barcelona. Departament de Física) ;
Quintana Romero, Alberto (Universitat Autònoma de Barcelona. Departament de Física) ;
Weschke, Eugen (Helmholtz-Zentrum Berlin für Materialien und Energie) ;
Pellicer Vilà, Eva M. (Eva Maria) (Universitat Autònoma de Barcelona. Departament de Física) ;
Sort Viñas, Jordi (Universitat Autònoma de Barcelona. Departament de Física)
The origin of magnetism in wide-gap semiconductors doped with non-ferromagnetic 3d transition metals still remains intriguing. In this article, insights in the magnetic properties of ordered mesoporous Cu-doped SnO₂ powders, prepared by hard-templating, have been unraveled. [...]
2017 - 10.3390/nano7110348
Nanomaterials, Vol. 7, issue 11 (Nov. 2017) , art. 348
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4 p, 448.3 KB |
Monitoring defects in III-V materials : a nanoscale CAFM study
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Iglesias, V. (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Wu, Q. (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Porti i Pujal, Marc (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Bersuker, G. (Sematech) ;
Cordes, A. (Sematech)
The implementation of high mobility devices requires growing III-V materials on silicon substrates. However, due to the lattice mismatch between these materials, III-V semiconductors tend to develop structural defects affecting device electrical characteristics. [...]
2015 - 10.1016/j.mee.2015.04.058
Microelectronic engineering, Vol. 147 (Nov. 2015) , p. 176-179
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5 p, 1.9 MB |
Gate current analysis of AlGaN/GaN on silicon heterojunction transistors at the nanoscale
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Fontserè Recuenco, Abel (Centro Nacional de Microelectrónica) ;
Perez-Tomas, Amador (Centro Nacional de Microelectrónica) ;
Placidi, Marcel (Centro Nacional de Microelectrónica) ;
Aguiló Llobet, Jordi (Universitat Autònoma de Barcelona. Departament de Microelectrònica i Sistemes Electrònics) ;
Baron, N. (Centre national de la recherche scientifique (França)) ;
Chenot, S. (Centre national de la recherche scientifique (França)) ;
Cordier, Y. (Centre national de la recherche scientifique (França)) ;
Moreno, J. C. (Centre national de la recherche scientifique (França)) ;
Iglesias Santiso, Vanessa (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Porti i Pujal, Marc (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Bayerl, Albin (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Lanza Martínez, Mario (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
The gate leakage current of AlGaN/GaN (on silicon)high electron mobility transistor(HEMT) is investigated at the micro and nanoscale. The gate current dependence (25-310 °C) on the temperature is used to identify the potential conduction mechanisms, as trap assisted tunneling or field emission. [...]
2012 - 10.1063/1.4748115
Applied physics letters, Vol. 101, Issue 9 (August 2012) , p. 093505/1-093505/4
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4 p, 752.7 KB |
Role of the microstructure on the magnetic properties of Co-doped ZnO nanoparticles
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Martínez, Benjamín (Institut de Ciència de Materials de Barcelona) ;
Sandiumenge Ortiz, Felip (Institut de Ciència de Materials de Barcelona) ;
Balcells Argemí, Lluís (Institut de Ciència de Materials de Barcelona) ;
Arbiol i Cobos, Jordi (Universitat de Barcelona. Serveis Científics) ;
Sibieude, F. (Institut de science et génie des Matériaux et Procédés (Font Romeu, França)) ;
Monty, C. (Institut de science et génie des Matériaux et Procédés (Font Romeu, França)) ;
American Physical Society
We report on the magnetic and structural properties of Co-doped ZnO nanoparticles prepared by the vaporization-condensation method in a solar reactor. X-ray diffraction data and high-resolution electron microscopy (HREM) confirm the total absence of metallic Co clusters or any other phase different from würtzite-type ZnO. [...]
2005 - 10.1063/1.1880433
Applied physics letters, Vol. 86, Issue 10 (March 2005) , p. 103113/1-103113/3
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