Results overview: Found 4 records in 0.02 seconds.
Articles, 4 records found
Articles 4 records found  
1.
6 p, 1.2 MB Electrical control of spin-polarized topological currents in monolayer WTe2 / Garcia, José H. (Institut Català de Nanociència i Nanotecnologia) ; You, Jinxuan (Universitat Autònoma de Barcelona. Departament de Física) ; García-Mota, Mónica (Simune Atomistics S.L.) ; Koval, Peter (Simune Atomistics S.L.) ; Ordejon, Pablo (Institut Català de Nanociència i Nanotecnologia) ; Cuadrado, Ramón (Institut Català de Nanociència i Nanotecnologia) ; Verstraete, Matthieu J. (Université de Liège. Complex and Entangled Systems from Atoms to Materials) ; Zanolli, Zeila (Institut Català de Nanociència i Nanotecnologia) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
We evidence the possibility for coherent electrical manipulation of the spin orientation of topologically protected edge states in a low-symmetry quantum spin Hall insulator. By using a combination of ab initio simulations, symmetry-based modeling, and large-scale calculations of the spin Hall conductivity, it is shown that small electric fields can efficiently vary the spin textures of edge currents in monolayer 1T'-WTe2 by up to a 90-degree spin rotation, without jeopardizing their topological character. [...]
2022 - 10.1103/PhysRevB.106.L161410
Physical review B, Vol. 106, issue 16 (Oct. 2022) , art. L161410  
2.
9 p, 1.8 MB Highly Bi-doped Cu thin films with large spin-mixing conductance / Ruiz-Gómez, Sandra (Universidad Complutense de Madrid. Departamento de Física de Materiales) ; Serrano, Aída (SpLine) ; Guerrero, Rubén (Instituto Madrileño de Estudios Avanzados) ; Muñoz, Manuel (Instituto de Micro y Nanotecnología) ; Lucas del Pozo, Irene (Universidad de Zaragoza) ; Foerster, Michael (ALBA Laboratori de Llum de Sincrotró) ; Aballe, Lucía (ALBA Laboratori de Llum de Sincrotró) ; Marco, José F. (Instituto de Química Física "Rocasolano") ; Amado, Mario (University of Cambridge) ; McKenzie-Sell, Lauren (University of Cambridge) ; Di Bernardo, Angelo (University of Cambridge) ; Robinson, Jason W. A. (University of Cambridge) ; González Barrio, Miguel Ángel (Unidad Asociada IQFR) ; Mascaraque, Arantzazu (Universidad Complutense de Madrid. Departamento de Física de Materiales) ; Pérez, Lucas (Instituto Madrileño de Estudios Avanzados en Nanociencia)
The spin Hall effect (SHE) provides an efficient tool for the production of pure spin currents, essentially for the next generation of spintronics devices. Giant SHE has been reported in Cu doped with 0. [...]
2018 - 10.1063/1.5049944
APL materials, Vol. 6, Issue 10 (October 2018) , art. 101107  
3.
7 p, 2.3 MB Spin hall effect and origins of nonlocal Resistance in adatom-decorated graphene / Dinh, Van Tuan (Institut Català de Nanociència i Nanotecnologia) ; Marmolejo Tejada, J. M. (University of Delaware. Department of Physics and Astronomy) ; Waintal, Xavier (Université Grenoble Alpes) ; Nikolić, B. K. (University of Delaware. Department of Physics and Astronomy) ; Valenzuela, Sergio O. (Institut Català de Nanociència i Nanotecnologia) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
Recent experiments reporting an unexpectedly large spin Hall effect (SHE) in graphene decorated with adatoms have raised a fierce controversy. We apply numerically exact Kubo and Landauer-Büttiker formulas to realistic models of gold-decorated disordered graphene (including adatom clustering) to obtain the spin Hall conductivity and spin Hall angle, as well as the nonlocal resistance as a quantity accessible to experiments. [...]
2016 - 10.1103/PhysRevLett.117.176602
Physical review letters, Vol. 117, issue 17 (Oct. 2016) , p. 176602  
4.
4 p, 695.9 KB Bidirectional resonant tunneling spin pump / Ting, David Z. -Y. (California Institute of Technology. Jet Propulsion Laboratory) ; Cartoixà Soler, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; American Physical Society
We propose a mechanism for achieving bidirectional spin pumping in conventional nonmagnetic semiconductorresonant tunnelingheterostructures under zero magnetic field. The device is designed specifically to take advantage of the special spin configuration described by the Rashba effect in asymmetric quantum wells. [...]
2003 - 10.1063/1.1602158
Applied physics letters, Vol. 83, Issue 7 (August 2003) , p. 1391-1393  

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