1.
|
|
2.
|
9 p, 1.1 MB |
Reducing charge noise in quantum dots by using thin silicon quantum wells
/
Paquelet Wuetz, Brian (Delft University of Technology) ;
Degli Esposti, Davide (Delft University of Technology) ;
Zwerver, Anne-Marije J. (Delft University of Technology) ;
Amitonov, Sergey V. (QuTech and Netherlands Organisation for Applied Scientific Research) ;
Botifoll, Marc (Institut Català de Nanociència i Nanotecnologia) ;
Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ;
Vandersypen, Lieven M. K. (Delft University of Technology) ;
Russ, Maximilian (Delft University of Technology) ;
Scappucci, Giordano (Delft University of Technology)
Charge noise in the host semiconductor degrades the performance of spin-qubits and poses an obstacle to control large quantum processors. However, it is challenging to engineer the heterogeneous material stack of gate-defined quantum dots to improve charge noise systematically. [...]
2023 - 10.1038/s41467-023-36951-w
Nature communications, Vol. 14 (March 2023) , art. 1385
|
|
3.
|
21 p, 7.4 MB |
Control of spin-charge conversion in van der Waals heterostructures
/
Galceran, Regina (Institut Català de Nanociència i Nanotecnologia) ;
Tian, Bo (King Abdullah University of Science and Technology) ;
Li, Junzhu (King Abdullah University of Science and Technology) ;
Bonell, Frédéric (University of Grenoble Alpes. Spintec) ;
Jamet, Matthieu (University of Grenoble Alpes. Spintec) ;
Vergnaud, Céline (University of Grenoble Alpes. Spintec) ;
Marty, Alain (University of Grenoble Alpes. Spintec) ;
Garcia, José H. (Institut Català de Nanociència i Nanotecnologia) ;
Sierra, Juan F. (Institut Català de Nanociència i Nanotecnologia) ;
Costache, Marius Vasile (Institut Català de Nanociència i Nanotecnologia) ;
Roche, Stephan (Institut Català de Nanociència i Nanotecnologia) ;
Valenzuela, Sergio O. (Institut Català de Nanociència i Nanotecnologia) ;
Manchon, Auréliene (Aix-Marseille Université) ;
Zhang, Xixiang (King Abdullah University of Science and Technology) ;
Schwingenschlögl, Udo (King Abdullah University of Science and Technology)
The interconversion between spin and charge degrees of freedom offers incredible potential for spintronic devices, opening routes for spin injection, detection, and manipulation alternative to the use of ferromagnets. [...]
2021 - 10.1063/5.0054865
APL materials, Vol. 9, issue 10 (Oct. 2021) , art. 100901
|
|
4.
|
34 p, 1.9 MB |
Boosting room-temperature magneto-ionics in a non-magnetic oxide semiconductor
/
de Rojas, Julius (Universitat Autònoma de Barcelona. Departament de Física) ;
Quintana Puebla, Alberto (Georgetown University. Department of Physics (USA)) ;
Lopeandía Fernández, Aitor (Universitat Autònoma de Barcelona. Departament de Física) ;
Salguero, Joaquín (Instituto de Micro y Nanotecnología) ;
Costa-Krämer, José L. (Instituto de Micro y Nanotecnología) ;
Abad, Llibertat (Institut de Microelectrònica de Barcelona) ;
Liedke, Maciej O. (Helmholtz-Zentrum Dresden-Rossendorf. Institute of Radiation Physics (Germany)) ;
Butterling, Maik (Helmholtz-Zentrum Dresden-Rossendorf. Institute of Radiation Physics (Germany)) ;
Wagner, Andreas (Helmholtz-Zentrum Dresden-Rossendorf. Institute of Radiation Physics (Germany)) ;
Henderick, Lowie (Ghent University. Department of Solid State Sciences (Belgium)) ;
Dendooven, Jolien (Ghent University. Department of Solid State Sciences (Belgium)) ;
Detavernier, Christophe (Ghent University. Department of Solid State Sciences (Belgium)) ;
Sort Viñas, Jordi (Universitat Autònoma de Barcelona. Departament de Física) ;
Menéndez Dalmau, Enric (Universitat Autònoma de Barcelona. Departament de Física)
Voltage control of magnetism through electric field-induced oxygen motion (magneto-ionics) could represent a significant breakthrough in the pursuit for new strategies to enhance energy efficiency in magnetically actuated devices. [...]
2020 - 10.1002/adfm.202003704
Advanced functional materials, Vol. 30, Issue 36 (September 2020) , art. 2003704
|
|
5.
|
10 p, 3.9 MB |
Universal Spin Diffusion Length in Polycrystalline Graphene
/
Cummings, Aron (Institut Català de Nanociència i Nanotecnologia) ;
Dubois, Simon M. M. (Université Catholique de Louvain) ;
Charlier, Jean Christophe (Université Catholique de Louvain) ;
Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
Graphene grown by chemical vapor deposition (CVD) is the most promising material for industrial-scale applications based on graphene monolayers. It also holds promise for spintronics; despite being polycrystalline, spin transport in CVD graphene has been measured over lengths up to 30 μm, which is on par with the best measurements made in single-crystal graphene. [...]
2019 - 10.1021/acs.nanolett.9b03112
Nano letters, Vol. 19, Issue 10 (October 2019) , p. 7418-7426
|
|
6.
|
13 p, 895.2 KB |
Charge and spin transport anisotropy in nanopatterned graphene
/
Gregersen, Søren Schou (Danmarks Tekniske Universitet. Center for Nanostructured Graphene) ;
Garcia, José H. (Institut Català de Nanociència i Nanotecnologia) ;
Jauho, Antti-Pekka (Danmarks Tekniske Universitet. Center for Nanostructured Graphene) ;
Roche, Stephan (Institut Català de Nanociència i Nanotecnologia) ;
Power, Stephen R. (Institut Català de Nanociència i Nanotecnologia)
Anisotropic electronic transport is a possible route towards nanoscale circuitry design, particularly in two-dimensional materials. Proposals to introduce such a feature in patterned graphene have to date relied on large-scale structural inhomogeneities. [...]
2018 - 10.1088/2515-7639/aadca3
JPhys materials, Vol. 1, Núm. 1 (September 2018) , art. 015005
|
|
7.
|
12 p, 1.6 MB |
Spin Proximity Effects in Graphene/Topological Insulator Heterostructures
/
Song, Kenan (Institut Català de Nanociència i Nanotecnologia) ;
Soriano, David (QuantaLab and International Iberian Nanotechnology Laboratory) ;
Cummings, Aron (Institut Català de Nanociència i Nanotecnologia) ;
Robles, Roberto (Institut Català de Nanociència i Nanotecnologia) ;
Ordejon, Pablo (Institut Català de Nanociència i Nanotecnologia) ;
Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
Enhancing the spin-orbit interaction in graphene, via proximity effects with topological insulators, could create a novel 2D system that combines nontrivial spin textures with high electron mobility. [...]
2018 - 10.1021/acs.nanolett.7b05482
Nano letters, Vol. 18, Issue 3 (March 2018) , p. 2033-2039
|
|
8.
|
14 p, 5.9 MB |
Hybrid quantum anomalous Hall effect at graphene-oxide interfaces
/
Zanolli, Zeila (Institut Català de Nanociència i Nanotecnologia) ;
Niu, C. (Peter Grünberg Institut) ;
Bihlmayer, G. (Peter Grünberg Institut) ;
Mokrousov, Y. (Johannes Gutenberg University Mainz) ;
Mavropoulos, Phivos (Peter Grünberg Institut) ;
Verstraete, Matthieu J. (Université de Liège) ;
Blügel, Stefan (Peter Grünberg Institut)
Interfaces are ubiquitous in materials science, and in devices in particular. As device dimensions are constantly shrinking, understanding the physical properties emerging at interfaces is crucial to exploit them for applications, here for spintronics. [...]
2018 - 10.1103/PhysRevB.98.155404
Physical review B, Vol. 98, Issue 15 (October 2018) , art. 155404
|
|
9.
|
|
10.
|
35 p, 1.3 MB |
Room-temperature spin hall effect in graphene/MoS2 van der Waals heterostructures
/
Safeer, C. K. (CIC NanoGUNE) ;
Ingla-Aynés, Josep (CIC NanoGUNE) ;
Herling, Franz (CIC NanoGUNE) ;
Garcia, José H. (Institut Català de Nanociència i Nanotecnologia) ;
Vila Tusell, Marc (Institut Català de Nanociència i Nanotecnologia) ;
Ontoso, Nerea (CIC NanoGUNE) ;
Calvo, M. Reyes (IKERBASQUE. Basque Foundation for Science) ;
Roche, Stephan (Institut Català de Nanociència i Nanotecnologia) ;
Hueso, Luis E. (IKERBASQUE. Basque Foundation for Science) ;
Casanova, Fèlix (IKERBASQUE. Basque Foundation for Science)
Graphene is an excellent material for long-distance spin transport but allows little spin manipulation. Transition-metal dichalcogenides imprint their strong spin-orbit coupling into graphene via the proximity effect, and it has been predicted that efficient spin-to-charge conversion due to spin Hall and Rashba-Edelstein effects could be achieved. [...]
2019 - 10.1021/acs.nanolett.8b04368
Nano letters, Vol. 19, Issue 2 (February 2019) , p. 1074-1082
|
|