Resultats globals: 7 registres trobats en 0.02 segons.
Articles, 7 registres trobats
Articles 7 registres trobats  
1.
12 p, 435.8 KB Effect of the channel length on the transport characteristics of transistors based on boron-doped graphene ribbons / Marconcini, Paolo (Università di Pisa. Dipartimento di Ingegneria dell'Informazione) ; Cresti, Alessandro (Université Grenoble Alpes) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
Substitutional boron doping of devices based on graphene ribbons gives rise to a unipolar behavior, a mobility gap, and an increase of the I/I ratio of the transistor. Here we study how this effect depends on the length of the doped channel. [...]
2018 - 10.3390/ma11050667
Materials, Vol. 11, issue. 5 (April 2018) , art. 667  
2.
13 p, 4.7 MB Frequency response of electrolyte-gated graphene electrodes and transistors / Drieschner, Simon (Technische Universität München. Physik Department) ; Guimerà-Brunet, Anton (Instituto de Microelectronica de Barcelona) ; Garcia-Cortadella, Ramon (Institut Català de Nanociència i Nanotecnologia) ; Viana Casals, Damià (Institut Català de Nanociència i Nanotecnologia) ; Makrygiannis, Evangelos (Technische Universität München. Physik Department) ; Blaschke, Benno M. (Technische Universität München. Physik Department) ; Vieten, Josua (Technische Universität München. Physik Department) ; Garrido Ariza, José A. (Institut Català de Nanociència i Nanotecnologia)
The interface between graphene and aqueous electrolytes is of high importance for applications of graphene in the field of biosensors and bioelectronics. The graphene/electrolyte interface is governed by the low density of states of graphene that limits the capacitance near the Dirac point in graphene and the sheet resistance. [...]
2017 - 10.1088/1361-6463/aa5443
Journal of physics D: applied physics, Vol. 50, no. 9 (Feb. 2017) , art. 095304  
3.
16 p, 2.3 MB Current Status and Opportunities of Organic Thin-Film Transistor Technologies / Guo, Xiaojun (Shanghai Jiao Tong University) ; Xu, Yong (Dongguk University (Seül)) ; Ogier, Simon (NeuDrive Limited) ; Nga Ng, Tse (University of California) ; Caironi, Mario (Center for Nano Science and Technology@PoliMi (Milà, Itàlia)) ; Perinot, Andrea (Center for Nano Science and Technology@PoliMi (Milà, Itàlia)) ; Li, Ling (Chinese Academy of Sciences (Beijing, Xina)) ; Zhao, Jiaqing (Shanghai Jiao Tong University) ; Tang, Wei (Shanghai Jiao Tong University) ; Sporea, Radu A. (University of Surrey) ; Nejim, Ahmed (Silvaco Europe Ltd) ; Carrabina Bordoll, Jordi (Universitat Autònoma de Barcelona. Departament de Microelectrònica i Sistemes Electrònics) ; Cain, Paul (FlexEnable Ltd.) ; Yan, Feng (The Hong Kong Polytechnic University)
Attributed to its advantages of super mechanical flexibility, very low-temperature processing, and compatibility with low cost and high throughput manufacturing, organic thin-film transistor (OTFT) technology is able to bring electrical, mechanical, and industrial benefits to a wide range of new applications by activating nonflat surfaces with flexible displays, sensors, and other electronic functions. [...]
2017 - 10.1109/TED.2017.2677086
IEEE transactions on electron devices, Vol. 64, Num. 5 (2017) , p. 1906-1921  
4.
33 p, 1.1 MB Short channel effects in graphene-based field effect transistors targeting radio-frequency applications / Feijoo, Pedro C (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Jiménez Jiménez, David (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Cartoixà Soler, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Channel length scaling in graphene field effect transistors (GFETs) is key in the pursuit of higher performance in radio frequency electronics for both rigid and flexible substrates. Although twodimensional (2D) materials provide a superior immunity to short channel effects (SCEs) than bulk materials, they could dominate in scaled GFETs. [...]
2016
2D Materials, Vol. 3, no. 2 (June 2016) , p. 1-13  
5.
7 p, 921.0 KB Large-signal model of graphene field-effect transistors. Part II : circuit performance benchmarking / Pasadas, Francisco (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Jiménez Jiménez, David (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
This paper presents a circuit performance benchmarking using the large-signal model of graphene field effect transistor reported in Part I of this two-part paper. To test the model, it has been implemented in a circuit simulator. [...]
2016 - 10.1109/TED.2016.2563464
IEEE Transactions on electron devices, Vol. 63, Issue 7 (July 2016) , p. 2942 - 2947  
6.
6 p, 1.8 MB Large-signal model of graphene field-effect transistors. Part I : compact modeling of GFET intrinsic capacitances / Pasadas, Francisco (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Jiménez Jiménez, David (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
We present a circuit-compatible compact model of the intrinsic capacitances of graphene field-effect transistors (GFETs). Together with a compact drain current model, a large-signal model of GFETs is developed combining both models as a tool for simulating the electrical behavior of graphene-based integrated circuits, dealing with the DC, transient behavior, and frequency response of the circuit. [...]
2016 - 10.1109/TED.2016.2570426
IEEE Transactions on Electron Devices, Vol. 63 Issue 7 (July 2016) , p. 2936 - 2941  
7.
6 p, 228.6 KB Resistive switching like-behavior in MOSFETs with ultra-thin HfSiON dielectric gate stack : pMOS and nMOS comparison and reliability implications / Crespo Yepes, Albert (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Martín Martínez, Javier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Rodríguez Martínez, Rosana (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Aymerich Humet, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
In this work, the Resistive Switching (RS) phenomenon in n and pMOSFETs with ultrathin Hf based high-k dielectric is studied. Two different conductive levels, a high (HRS) and a low (LRS) resistance states can be distinguished in the dielectric. [...]
2013 - 10.1016/j.microrel.2013.07.046
Microelectronics reliability, Vol. 53, No. 9–11 (Sep.-Nov. 2013) , p. 1247-1251  

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