Results overview: Found 13 records in 0.03 seconds.
Articles, 13 records found
Articles 13 records found  1 - 10next  jump to record:
1.
15 p, 9.5 MB Addressing the Environment Electrostatic Effect on Ballistic Electron Transport in Large Systems : A QM/MM-NEGF Approach / Feliciano, Gustavo T. (Universidade Estadual Paulista (Brasil)) ; Sanz Navarro, Carlos (Institut Català de Nanociència i Nanotecnologia) ; Coutinho-Neto, Mauricio Domingues (Universidade Federal do ABC) ; Ordejón Rontomé, Pablo (Institut Català de Nanociència i Nanotecnologia) ; Scheicher, Ralph H. (Uppsala University) ; Rocha, Alexandre Reily (Universidade Estadual Paulista (Brasil))
The effects of the environment in nanoscopic materials can play a crucial role in device design. Particularly in biosensors, where the system is usually embedded in a solution, water and ions have to be taken into consideration in atomistic simulations of electronic transport for a realistic description of the system. [...]
2018 - 10.1021/acs.jpcb.7b03475
Journal of Physical Chemistry B, Vol. 122, Núm. 2 (January 2018) , p. 485-492  
2.
8 p, 3.3 MB Thermoelectric properties of semiconductor-metal composites produced by particle blending / Liu, Yu (Institut de Recerca en Energia de Catalunya) ; Cadavid, Doris (Institut de Recerca en Energia de Catalunya) ; Ibáñez, M. (Empa-Swiss Federal Laboratories for Materials Science and Technology) ; Ortega, Silvia (Institut de Recerca En Energía de Catalunya) ; Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia) ; Dobrozhan, Oleksandr (Institut de Recerca En Energía de Catalunya) ; Kovalenko, Maksym V. (Institute of Inorganic Chemistry (Bratislava, Eslovàquia)) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanontecnologia) ; Cabot, Andreu (Institut de Recerca en Energia de Catalunya)
In the quest for more efficient thermoelectric material able to convert thermal to electrical energy and vice versa, composites that combine a semiconductor host having a large Seebeck coefficient with metal nanodomains that provide phonon scattering and free charge carriers are particularly appealing. [...]
2016 - 10.1063/1.4961679
APL Materials, Vol. 4, Núm. 10 (January 2016) , p. 104813  
3.
10 p, 3.6 MB Nanostructured graphene for spintronics / Gregersen, Søren Schou (Danmarks Tekniske Universitet. Center for Nanostructured Graphene) ; Power, Stephen R. (Institut Català de Nanociència i Nanotecnologia) ; Jauho, Antti-Pekka (Danmarks Tekniske Universitet. Center for Nanostructured Graphene)
Zigzag edges of the honeycomb structure of graphene exhibit magnetic polarization, making them attractive as building blocks for spintronic devices. Here, we show that devices with zigzag-edged triangular antidots perform essential spintronic functionalities, such as spatial spin splitting or spin filtering of unpolarized incoming currents. [...]
2017 - 10.1103/PhysRevB.95.121406
Physical review B, Vol. 95, issue 12 (March 2017) , art. 121406  
4.
8 p, 1.4 MB Tailoring magnetic insulator proximity effects in graphene : First-principles calculations / Hallal, Ali (Université Grenoble Alpes) ; Ibrahim, Fatima (Université Grenoble Alpes) ; Yang, Hongxin (Université Grenoble Alpes) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia) ; Chshiev, Mairbek (Université Grenoble Alpes)
We report a systematic first-principles investigation of the influence of different magnetic insulators on the magnetic proximity effect induced in graphene. Four different magnetic insulators are considered: two ferromagnetic europium chalcogenides namely EuO and EuS and two ferrimagnetic insulators yttrium iron garnet (YIG) and cobalt ferrite (CFO). [...]
2017 - 10.1088/2053-1583/aa6663
2D Materials, Vol. 4, Núm. 2 (June 2017) , article 025074  
5.
14 p, 2.0 MB Scaling properties of polycrystalline graphene : A review / Isacsson, Andreas (Chalmers University of Technology (Göteborg, Suècia)) ; Cummings, Aron W. (Institut Català de Nanociència i Nanotecnologia) ; Colombo, Luciano (Institut Català de Nanociència i Nanotecnologia) ; Colombo, Luigi (Texas Instruments Inc.) ; Kinaret, Jari M. (Chalmers University of Technology (Göteborg, Suècia)) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
We present an overview of the electrical, mechanical, and thermal properties of polycrystalline graphene. Most global properties of this material, such as the charge mobility, thermal conductivity, or Young's modulus, are sensitive to its microstructure, for instance the grain size and the presence of line or point defects. [...]
2017 - 10.1088/2053-1583/aa5147
2D Materials, Vol. 4, Núm. 1 (March 2017) , article 012002  
6.
5 p, 1.3 MB Modeling of hysteretic Schottky diode-like conduction in Pt/BiFeO3/SrRuO3 switches / Miranda, Enrique Alberto (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Jiménez Jiménez, David (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Tsurumaki-Fukuchi, A. (National Institute of Advanced Industrial Science and Technology (AIST)) ; Blasco, J. (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Yamada, H. (National Institute of Advanced Industrial Science and Technology (AIST)) ; Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Sawa, A. (National Institute of Advanced Industrial Science and Technology (AIST))
The hysteresis current-voltage (I-V) loops in Pt/BiFeO3/SrRuO3 structures are simulated using a Schottky diode-like conduction model with sigmoidally varying parameters, including series resistance correction and barrier lowering. [...]
2014 - 10.1063/1.4894116
Applied physics letters, Vol. 105 (August 2014) , p. 82904-01/82904-04  
7.
4 p, 503.7 KB Surface behavior of La2/3Ca1/3MnO3 epitaxial thin films / Abad Muñoz, Llibertat (Institut de Ciència de Materials de Barcelona) ; Martínez Perea, Benjamín (Institut de Ciència de Materials de Barcelona) ; Balcells Argemí, Lluís (Institut de Ciència de Materials de Barcelona) ; American Physical Society
The role of the surface layers in La2/3Ca1/3MnO3 magnetic oxide epitaxialthin films is analyzed. We show that the topmost layers do play a very relevant role on the transport properties acting as an insulating barrier. [...]
2005 - 10.1063/1.2133925
Applied Physics Letters, Vol. 87, Issue 21 (November 2005) , p. 212502  
8.
4 p, 232.3 KB Effects of high-field electrical stress on the conduction properties of ultra-thin La2O3 films / Miranda, Enrique Alberto (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Molina, J. (Tokyo Institute of Technology. Frontier Collaborative Research Center) ; Kim, Y. (Tokyo Institute of Technology. Frontier Collaborative Research Center) ; Iwai, H. (Tokyo Institute of Technology. Frontier Collaborative Research Center) ; American Physical Society
Electron transport in high-field stressed metal-insulator-silicon devices with ultrathin (<5nm) lanthanum oxide layers is investigated. We show that the leakage current flowing through the structure prior to degradation is direct and Fowler-Nordheimtunneling conduction, while that after stress exhibits diode-like behavior with series and parallel resistances. [...]
2005 - 10.1063/1.1944890
Applied Physics Letters, Vol. 86, Issue 23 (June 2005) , p. 232104/1-232104/3  
9.
4 p, 257.1 KB Alternating current loss in a cylinder with power-law current-voltage characteristic / Chen, D. -X. (Institució Catalana de Recerca i Estudis Avançats) ; Gu, C. (Tsinghua University. Applied Superconductivity Research Center) ; American Physical Society
The transportac loss Q in a superconducting cylinder of radius a with a power-law current-voltage characteristicE=Ec∣J/Jc∣n as a function of current amplitude Im is numerically calculated for a set of given values of a,Jc, and frequency f at n=5, 10, 20, and 30. [...]
2005 - 10.1063/1.1947912
Applied Physics Letters, Vol. 86, Issue 25 (Juny 2005) , p. 252504  
10.
4 p, 286.6 KB Mesoscopic approach to progressive breakdown in ultrathin SiO2 layers / Miranda, Enrique Alberto (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; American Physical Society
The opening of a breakdown path across the ultrathin oxide layer in a metal-oxide-semiconductor structure caused by the application of electrical stress can be analyzed within the framework of the physics of mesoscopic conductors. [...]
2007 - 10.1063/1.2761831
Applied Physics Letters, Vol. 91, Issue 5 (July 2007) , p. 053502/1-053502/3  

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