UAB Digital Repository of Documents 18 records found  1 - 10next  jump to record: Search took 0.00 seconds. 
1.
12 p, 8.3 MB Flexible graphene transistors for recording cell action potentials / Blaschke, Benno M. (Technische Universität München. Walter Schottky Institut. Physik-Department) ; Lottner, Martin (Technische Universität München. Walter Schottky Institut. Physik-Department) ; Drieschner, Simon (Technische Universität München. Walter Schottky Institut. Physik-Department) ; Bonaccini Calia, Andrea (Institut Català de Nanociència i Nanotecnologia) ; Stoiber, Karolina (Technische Universität München. Walter Schottky Institut. Physik-Department) ; Rousseau, Lionel (University Paris EST. École Supérieure d'Ingénieurs en Électrotechnique et Électronique) ; Lissourges, Gaëlle (University Paris EST. École Supérieure d'Ingénieurs en Électrotechnique et Électronique) ; Garrido Ariza, José A. (Institut Català de Nanociència i Nanotecnologia)
Graphene solution-gated field-effect transistors (SGFETs) are a promising platform for the recording of cell action potentials due to the intrinsic high signal amplification of graphene transistors. In addition, graphene technology fulfills important key requirements for in-vivo applications, such as biocompability, mechanical flexibility, as well as ease of high density integration. [...]
2016 - 10.1088/2053-1583/3/2/025007
2D Materials, Vol. 3, issue 2 (June 2016) , p. 25007  
2.
11 p, 3.4 MB Electronic structure of 2H-NbSe₂ single-layers in the CDW state / Silva Guillén, Jose Angel (Fundación IMDEA Nanociencia) ; Ordejón Rontomé, Pablo (Institut Català de Nanociència i Nanotecnologia) ; Guinea, Francisco (Fundación IMDEA Nanociencia) ; Canadell Casanova, Enric (Institut de Ciència de Materials de Barcelona)
Adensity functional theory study of NbSe₂"Qsingle-layers in the normal non-modulated and the 3xQ3 CDW states is reported. Weshow that, in the single layer, the CDW barely affects the Fermi surface of the system, thus ruling out a nesting mechanism as the driving force for the modulation. [...]
2016 - 10.1088/2053-1583/3/3/035028
2D Materials, Vol. 3, no. 3 (Sep. 2016) , art. 35028  
3.
6 p, 2.6 MB Electroactive graphene nanofluids for fast energy storage / Dubal, Deepak P. (Institut Català de Nanociència i Nanotecnologia) ; Gómez Romero, Pedro (Institut Català de Nanociència i Nanotecnologia)
Graphenes have been extensively studied as electrode materials for energy storage in supercapacitors and batteries, but always as solid electrodes. The conception and development of graphene electroactive nanofluids (ENFs) reported here for the first time provides a novel way to 'form' graphene electrodes and demonstrates proof of concept for the use of these liquid electrodes for energy storage in novel flow cells. [...]
2016 - 10.1088/2053-1583/3/3/031004
2D Materials, Vol. 3, Núm. 3 (September 2016) , art. 31004  
4.
7 p, 4.6 MB Valley-polarized quantum transport generated by gauge fields in graphene / Settnes, Mikkel (Danmarks Tekniske Universitet. Department of Photonics Engineering) ; Garcia, José H. (Institut Català de Nanociència i Nanotecnologia) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
We report on the possibility to simultaneously generate in graphene a bulk valley-polarized dissipative transport and a quantum valley Hall effect by combining strain-induced gauge fields and real magnetic fields. [...]
2017 - 10.1088/2053-1583/aa7cbd
2D Materials, Vol. 4, issue 3 (September 2017) , art. 31006  
5.
9 p, 1.1 MB Quantum transport in graphene in presence of strain-induced pseudo-Landau levels / Settnes, Mikkel (Danmarks Tekniske Universitet. Department of Photonics Engineering) ; Leconte, Nicolas (Institut Català de Nanociència i Nanotecnologia) ; Barrios-Vargas, José Eduardo (Institut Català de Nanociència i Nanotecnologia) ; Jauho, Antti-Pekka (Danmarks Tekniske Universitet. Department of Photonics Engineering) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
Wereport on mesoscopic transport fingerprints in disordered graphene caused by strain-field induced pseudomagnetic Landau levels (pLLs). Efficient numerical real space calculations of the Kubo formula are performed for an ordered network of nanobubbles in graphene, creating pseudomagnetic fields up to several hundreds of Tesla, values inaccessible by real magnetic fields. [...]
2016 - 10.1088/2053-1583/3/3/034005
2D Materials, Vol. 3, issue 3 (Jan. 2016) , art. 34005  
6.
10 p, 908.2 KB Thermal conductivity of MoS2 polycrystalline nanomembranes / Sledzinska, Marianna (Institut Català de Nanociència i Nanotecnologia) ; Graczykowski, Bartlomiej (Institut Català de Nanociència i Nanotecnologia) ; Placidi, Marcel (Institut de Recerca en Energía de Catalunya) ; Saleta Reig, David (Institut Català de Nanociència i Nanotecnologia) ; Sachat, Alexandros el (Universitat Autònoma de Barcelona. Departament de Física) ; Reparaz, Juan Sebastián (Institut Català de Nanociència i Nanotecnologia) ; Alzina, Francesc (Institut Català de Nanociència i Nanotecnologia) ; Mortazavi, Bohayra (Bauhaus-Universität Weimar (Alemanya). Institute of Structural Mechanics) ; Quey, Romain (Centre national de la recherche scientifique. École nationale supérieure des mines de Saint-Étienne) ; Colombo, Luciano (Institut Català de Nanociència i Nanotecnologia) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia) ; Sotomayor Torres, Clivia M. (Institut Català de Nanociència i Nanotecnologia)
Heat conduction in 2D materials can be effectively engineered by means of controlling nanoscale grain structure. Afavorable thermal performance makes these structures excellent candidates for integrated heat management units. [...]
2016 - 10.1088/2053-1583/3/3/035016
2D Materials, Vol. 3, no. 3 (Sep. 2016) , art. 35016  
7.
14 p, 1.6 MB Localized electronic states at grain boundaries on the surface of graphene and graphite / Luican-Mayer, Adina (University of Ottawa. Department of Physics) ; Barrios-Vargas, José Eduardo (Institut Català de Nanociència i Nanotecnologia) ; Falkenberg, Jesper Toft (Technical University of Denmark. Department of Micro- and Nanotechnology) ; Autès, Gabriel (Institute of Physics, Ecole Polytechnique Fédérale de Lausanne (EPFL)) ; Cummings, Aron W. (Institut Català de Nanociència i Nanotecnologia) ; Soriano, David (Institut Català de Nanociència i Nanotecnologia) ; Li, Guohong (Rutgers University. Department of Physics and Astronomy) ; Brandbyge, Mads (Technical University of Denmark. Department of Micro- and Nanotechnology) ; Yazyev, Oleg V. (Institute of Physics. Ecole Polytechnique Fédérale de Lausanne (EPFL)) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia) ; Yandrei, Eva Y. (Rutgers University. Department of Physics and Astronomy)
Recent advances in large-scale synthesis of graphene and other 2D materials have underscored the importance of local defects such as dislocations and grain boundaries (GBs), and especially their tendency to alter the electronic properties of the material. [...]
2016 - 10.1088/2053-1583/3/3/031005
2D Materials, Vol. 3, Núm. 3 (September 2016) , art. 031005  
8.
12 p, 6.0 MB How disorder affects topological surface states in the limit of ultrathin Bi2Se3 films / Song, Kenan (Institut Català de Nanociència i Nanotecnologia) ; Robles, Roberto (Institut Català de Nanociència i Nanotecnologia) ; Soriano, David (Institut Català de Nanociència i Nanotecnologia) ; Ordejón Rontomé, Pablo (Institut Català de Nanociència i Nanotecnologia) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
We present a first-principles study of electronic properties of ultrathin films of topological insulators (TIs) and scrutinize the role of disorder on the robustness of topological surface states, which can be analysed through their spin textures. [...]
2016 - 10.1088/2053-1583/3/4/045007
2D Materials, Vol. 3, Núm. 4 (December 2016) , art. 045007  
9.
13 p, 1.2 MB First principles analysis of the CDW instability of single-layer 1T-TiSe2 and its evolution with charge carrier density / Guster, Bogdan (Institut Català de Nanociència i Nanotecnologia) ; Canadell Casanova, Enric (Institut de Ciència de Materials de Barcelona (ICMAB-CSIC)) ; Pruneda, Miguel (Institut Català de Nanociència i Nanotecnologia) ; Ordejón Rontomé, Pablo (Institut Català de Nanociència i Nanotecnologia)
We present a density functional theory study of the electronic structure of single-layer TiSe, and focus on the charge density wave (CDW) instability present on this 2D material. We explain the periodicity of the CDW from the phonon band structure of the undistorted crystal, which is unstable under one of the phonon modes at the M point. [...]
2018 - 10.1088/2053-1583/aab568
2D Materials, Vol. 5, Núm. 2 (March 2018) , art. 025024  
10.
15 p, 1.0 MB 1D ferromagnetic edge contacts to 2D graphene/h-BN heterostructures / Karpiak, Bogdan (Chalmers University of Technology (Göteborg, Suècia)) ; Dankert, André (Chalmers University of Technology (Göteborg, Suècia)) ; Cummings, Aron W. (Institut Català de Nanociència i Nanotecnologia) ; Power, Stephen R. (Institut Català de Nanociència i Nanotecnologia) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia) ; Dash, Saroj P. (Chalmers University of Technology (Göteborg, Suècia))
We report the fabrication of one-dimensional (1D) ferromagnetic edge contacts to two-dimensional (2D) graphene/h-BN heterostructures. While aiming to study spin injection/detection with 1D edge contacts, a spurious magnetoresistance signal was observed, which is found to originate from the local Hall effect in graphene due to fringe fields from ferromagnetic edge contacts and in the presence of charge current spreading in the nonlocal measurement configuration. [...]
2018 - 10.1088/2053-1583/aa8d2b
2D Materials, Vol. 5, Núm. 1 (January 2018) , article 14001  

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