UAB Digital Repository of Documents 29 records found  1 - 10nextend  jump to record: Search took 0.03 seconds. 
1.
43 p, 7.1 MB Graphene related materials for thermal management / Fu, Yifeng (Chalmers University of Technology) ; Hansson, Josef (Chalmers University of Technology) ; Liu, Ya (Fudan University) ; Chen, Shujing (Shanghai University) ; Zehri, Abdelhafid (Chalmers University of Technology) ; Samani, Majid Kabiri (Chalmers University of Technology) ; Wang, Nan (SHT Smart High Tech AB) ; Ni, Yuxiang (Southwest Jiaotong University) ; Zhang, Yan (Shanghai University) ; Zhang, Zhi-Bin (Uppsala University) ; Wang, Qianlong (Shenzhen Shen Rui Graphene Technology) ; Li, Mengxiong (Fudan University) ; Lu, Hongbin (Fudan University) ; Sledzinska, Marianna (Institut Català de Nanociència i Nanotecnologia) ; Sotomayor Torres, Clivia M. (Institut Català de Nanociència i Nanotecnologia) ; Volz, Sebastian (University of Tokyo) ; Balandin, Alexander A. (University of California) ; Xu, Xiangfan (Tongji University) ; Liu, Johan (Shanghai University)
Almost 15 years have gone ever since the discovery of graphene as a single atom layer. Numerous papers have been published to demonstrate its high electron mobility, excellent thermal and mechanical as well as optical properties. [...]
2019 - 10.1088/2053-1583/ab48d9
2D Materials, Vol. 7, Núm. 1 (October 2019) , art. 12001  
2.
9 p, 1.8 MB Magnetic proximity in a van der Waals heterostructure of magnetic insulator and graphene / Karpiak, Bogdan (Chalmers University of Technology) ; Cummings, Aron W. (Institut Català de Nanociència i Nanotecnologia) ; Zollner, Klaus (University of Regensburg) ; Vila Tusell, Marc (Universitat Autònoma de Barcelona. Departament de Física) ; Khokhriakov, Dmitrii (Chalmers University of Technology) ; Hoque, Anamul Md (Chalmers University of Technology) ; Dankert, André (Chalmers University of Technology) ; Svedlindh, Peter (Uppsala University) ; Fabian, Jaroslav (University of Regensburg) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia) ; Dash, Saroj P. (Chalmers University of Technology)
Engineering 2D material heterostructures by combining the best of different materials in one ultimate unit can offer a plethora of opportunities in condensed matter physics. Here, in the van der Waals heterostructures of the ferromagnetic insulator CrGeTe and graphene, our observations indicate an out-of-plane proximity-induced ferromagnetic exchange interaction in graphene. [...]
2019 - 10.1088/2053-1583/ab5915
2D Materials, Vol. 7, Núm. 1 (December 2019) , art. 15026  
3.
17 p, 3.1 MB Symmetry forbidden morphologies and domain boundaries in nanoscale graphene islands / Parreiras, Sofia de Oliveira (Institut Català de Nanociència i Nanotecnologia) ; Gastaldo, Michele (Institut Català de Nanociència i Nanotecnologia) ; Moreno Sierra, César (Institut Català de Nanociència i Nanotecnologia) ; Martins, M.D. (Centro de Desenvolvimento da Tecnologia Nuclear (CDTN)) ; Garcia Lekue, Aran (Basque Foundation for Science) ; Ceballos, Gustavo (Institut Català de Nanociència i Nanotecnologia) ; Paniago, R. (Universidade Federal de Minas Gerais. Departamento de Física) ; Mugarza, Aitor (Institut Català de Nanociència i Nanotecnologia)
The synthesis of graphene nanoislands with tailored quantum properties requires an atomic control of the morphology and crystal structure. As one reduces their size down to the nanometer scale, domain boundary and edge energetics, as well as nucleation and growth mechanisms impose different stability and kinetic landscape from that at the microscale. [...]
2017 - 10.1088/2053-1583/aa70fa
2D Materials, Vol. 4, Núm. 2 (May 2017) , art. 25104  
4.
43 p, 3.3 MB Sensing ion channel in neuron networks with graphene field effect transistors / Veliev, Farida (Université Grenoble Alpes) ; Cresti, Alessandro (Université Grenoble Alpes) ; Kalita, Dipankar (Université Grenoble Alpes) ; Bourrier, Antoine (Université Grenoble Alpes) ; Belloir, Tiphaine (Université Grenoble Alpes) ; Briançon-Marjollet, Anne (Université Grenoble Alpes) ; Albrieux, Mireille (Université Grenoble Alpes) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia) ; Bouchiat, Vincent (Université Grenoble Alpes) ; Delacour, Cécile (Université Grenoble Alpes)
Graphene, the atomically-thin honeycomb carbon lattice, is a highly conducting 2D material whose exposed electronic structure offers an ideal platform for chemical and biological sensing. Its biocompatible, flexible and chemically inert nature associated with the lack of dangling bonds, offers novel perspectives for direct interfacing with biological molecules. [...]
2018 - 10.1088/2053-1583/aad78f
2D Materials, Vol. 5, Núm. 4 (October 2018) , art. 45020  
5.
9 p, 1.4 MB Crossover from ballistic to diffusive thermal transport in suspended graphene membranes / Sachat, Alexandros el (Institut Català de Nanociència i Nanotecnologia) ; Köenemann, F. (IBM Research) ; Menges, F. (University of Colorado. Department of Physics) ; Del Corro García, Elena (Institut Català de Nanociència i Nanotecnologia) ; Garrido Ariza, José A. (Institut Català de Nanociència i Nanotecnologia) ; Sotomayor Torres, Clivia M. (Institut Català de Nanociència i Nanotecnologia) ; Alzina, Francesc (Institut Català de Nanociència i Nanotecnologia) ; Gotsmann, B. (IBM Research)
We report heat transport measurements on suspended single-layer graphene disks with radius of 150-1600 nm using a high-vacuum scanning thermal microscope. The results of this study revealed a radius-dependent thermal contact resistance between tip and graphene, with values between 1. [...]
2019 - 10.1088/2053-1583/ab097d
2D Materials, Vol. 6, Núm. 2 (April 2019) , art. 25034  
6.
14 p, 2.2 MB Anisotropic features in the electronic structure of the two-dimensional transition metal trichalcogenide TiS3 : electron doping and plasmons / Silva Guillén, José Ángel (Fundación IMDEA Nanociencia) ; Canadell Casanova, Enric (Institut de Ciència de Materials de Barcelona) ; Ordejón Rontomé, Pablo (Institut Català de Nanociència i Nanotecnologia) ; Guinea, Francisco (University of Manchester. Department of Physics and Astronomy) ; Roldán, Rafael (Instituto de Ciencia de Materiales de Madrid)
Analysis of the band structure of TiS single-layers suggests the possibility of changing their physical behaviour by injecting electron carriers. The anisotropy of the valence and conduction bands is explained in terms of their complex orbital composition. [...]
2017 - 10.1088/2053-1583/aa6b92
2D Materials, Vol. 4, Núm. 2 (June 2017) , art. 25085  
7.
8 p, 3.1 MB 2 × 2 charge density wave in single-layer TiTe₂ / Guster, Bogdan (Institut Català de Nanociència i Nanotecnologia) ; Robles, Roberto (Institut Català de Nanociència i Nanotecnologia) ; Pruneda, Miguel (Institut Català de Nanociència i Nanotecnologia) ; Canadell Casanova, Enric (Institut de Ciència de Materials de Barcelona) ; Ordejón Rontomé, Pablo (Institut Català de Nanociència i Nanotecnologia)
A density functional theory study concerning the origin of the recently reported 2 × 2 charge density wave (CDW) instability in single-layer TiTe₂ is reported. It is shown that, whereas calculations employing the semi-local functional PBE favor the undistorted structure, the hybrid functional HSE06 correctly predicts a 2 × 2 distortion. [...]
2019 - 10.1088/2053-1583/aaf20b
2D Materials, Vol. 6, issue 1 (Jan. 2019) , art. 15027  
8.
15 p, 790.9 KB Probing the nanoscale origin of strain and doping in graphene-hBN heterostructures / Vincent, Tom (National Physical Laboratory (United Kingdom)) ; Panchal, Vishal (Bruker Nano Surfaces) ; Booth, Timothy J (Danmarks Tekniske Universitet. Center for Nanostructured Graphene) ; Power, Stephen R. (Institut Català de Nanociència i Nanotecnologia) ; Jauho, Antti-Pekka (Danmarks Tekniske Universitet. Center for Nanostructured Graphene) ; Antonov, Vladimir (University of London. Royal Holloway) ; Kazakova, Olga (National Physical Laboratory (United Kingdom))
We use confocal Raman microscopy and a recently proposed vector analysis scheme to investigate the nanoscale origin of strain and carrier concentration in exfoliated graphene-hexagonal boron nitride (hBN) heterostructures on silicon dioxide (SiO). [...]
2019 - 10.1088/2053-1583/aaf1dc
2D Materials, Vol. 6, issue 1 (Jan. 2019) , art. 15022  
9.
11 p, 562.6 KB Spin transport in hydrogenated graphene / Soriano, David (Institut Català de Nanociència i Nanotecnologia) ; Dinh, Van Tuan (Institut Català de Nanociència i Nanotecnologia) ; Dubois, Simon M.M. (Université Catholique de Louvain. Institute of Condensed Matter and Nanosciences) ; Gmitra, Martin (University of Regensburg) ; Cummings, Aron W. (Institut Català de Nanociència i Nanotecnologia) ; Kochan, Denis (University of Regensburg) ; Ortmann, Frank (Technische Universität Dresden) ; Charlier, Jean Christophe (Université Catholique de Louvain. Institute of Condensed Matter and Nanosciences) ; Fabian, Jaroslav (Universität Regensburg) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
In this review we discuss the multifaceted problem of spin transport in hydrogenated graphene from a theoretical perspective. The current experimental findings suggest that hydrogenation can either increase or decrease spin lifetimes, which calls for clarification. [...]
2015 - 10.1088/2053-1583/2/2/022002
2D Materials, Vol. 2, Núm. 2 (June 2015) , art. 22002  
10.
8 p, 505.6 KB Quantum transport in chemically functionalized graphene at high magnetic field : Defect-induced critical states and breakdown of electron-hole symmetry / Leconte, Nicolas (Institut Català de Nanociència i Nanotecnologia) ; Ortmann, Frank (Institut Català de Nanociència i Nanotecnologia) ; Cresti, Alessandro (Université Grenoble Alpes) ; Charlier, Jean Christophe (Université Catholique de Louvain. Institute of Condensed Matter and Nanosciences) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
Unconventional magnetotransport fingerprints in the quantum Hall regime (with applied magnetic fields from one to several tens of Tesla) in chemically functionalized graphene are reported. Upon chemical adsorption of monoatomic oxygen (from 0. [...]
2014 - 10.1088/2053-1583/1/2/021001
2D Materials, Vol. 1, Núm. 2 (September 2014) , art. 21001  

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