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6 p, 1.6 MB |
A study on free-standing 3C-SiC bipolar power diodes
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Li, Fan (University of Warwick. School of Engineering) ;
Renz, Arne Benjamin (University of Warwick. School of Engineering) ;
Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia) ;
Shah, Vishal (University of Warwick. School of Engineering) ;
Gammon, Peter (University of Warwick. School of Engineering) ;
La Via, Francesco (Consiglio Nazionale delle Ricerche. Instituto per la Microelettronica e Microsistemi) ;
Jennings, Mike (Swansea University. College of Engineering) ;
Mawby, Philip (University of Warwick. School of Engineering)
A low p-n built-in potential (1. 75 V) makes 3C-SiC an attractive choice for medium voltage bipolar or charge balanced devices. Until recently, most 3C-SiC had been grown on Si, and power device fabrication had, therefore, been hindered by issues, such as high defect density and limited processing temperature, while devices were necessarily limited to lateral structures. [...]
2021 -  10.1063/5.0054433
Applied Physics Letters, Vol. 118, issue 24 (June 2021) , art. 242101
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7 p, 2.5 MB |
Exciton tuning and strain imaging in WS2supported on PDMS micropillars
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Sledzinska, Marianna (Institut Català de Nanociència i Nanotecnologia) ;
Xiao, Peng (Institut Català de Nanociència i Nanotecnologia) ;
Puig Vilardell, E. (Universitat Autònoma de Barcelona. Departament de Física) ;
Chávez Ángel, Emigdio (Institut Català de Nanociència i Nanotecnologia) ;
Esplandiu Egido, Maria José (Institut Català de Nanociència i Nanotecnologia) ;
Sotomayor Torres, Clivia M (Institut Català de Nanociència i Nanotecnologia)
Since the raise of 2D materials, significant research has been dedicated to their strain-dependent electronic and mechanical properties. In this work, we studied exciton energies and low-frequency phonon modes in CVD-grown mono- and few-layer WS2 transferred on PDMS micropillars. [...]
2022 - 10.1063/5.0130927
Applied Physics Letters, Vol. 121, Issue 25 (December 2022) , art. 253101
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4.
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15 p, 793.3 KB |
Voltage-driven strain-mediated modulation of exchange bias in Ir20Mn80/Fe80Ga20/Ta/<011>-oriented PMN-32PT heterostructures
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Demirci, Erdem (Universitat Autònoma de Barcelona. Departament de Física) ;
de Rojas, Julius (Universitat Autònoma de Barcelona. Departament de Física) ;
Quintana Puebla, Alberto (Institut de Ciència de Materials de Barcelona) ;
Fina, Ignasi (Institut de Ciència de Materials de Barcelona) ;
Menéndez Dalmau, Enric (Universitat Autònoma de Barcelona. Departament de Física) ;
Sort Viñas, Jordi (Universitat Autònoma de Barcelona. Departament de Física)
Manipulation of exchange bias with electric field is appealing to boost energy efficiency in spintronic devices. Here, this effect is shown at room temperature in Ir20Mn80/Fe80Ga20/Ta layers grown onto ⟨011⟩-oriented PMN-32PT single crystals. [...]
2022 - 10.1063/5.0091231
Applied physics letters, Vol. 120, Issue 14 (April 2022) , art. 142406
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5.
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13 p, 3.7 MB |
Voltage control of magnetism with magneto-ionic approaches : beyond voltage-driven oxygen ion migration
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de Rojas, Julius (Universitat Autònoma de Barcelona. Departament de Física) ;
Quintana Puebla, Alberto (Institut de Ciència de Materials de Barcelona) ;
Rius, Gemma (Institut de Microelectrònica de Barcelona) ;
Stefani, Christina (Institut Català de Nanociència i Nanotecnologia) ;
Domingo Marimon, Neus (Institut Català de Nanociència i Nanotecnologia) ;
Costa-Krämer, José L. (Consejo Superior de Investigaciones Científicas (Espanya).Instituto de Micro y Nanotecnología) ;
Menéndez Dalmau, Enric (Universitat Autònoma de Barcelona. Departament de Física) ;
Sort Viñas, Jordi (Universitat Autònoma de Barcelona. Departament de Física)
Magneto-ionics is an emerging field in materials science where voltage is used as an energy-efficient means to tune magnetic properties, such as magnetization, coercive field, or exchange bias, by voltage-driven ion transport. [...]
2022 - 10.1063/5.0079762
Applied Physics Letters, Vol. 120, issue 7 (Feb. 2022) , art. 70501
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6.
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5 p, 403.8 KB |
Workfunction fluctuations in polycrystalline TiN observed with KPFM and their impact on MOSFETs variability
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Ruiz, Ana (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Seoane, Natalia (Universidade de Santiago de Compostela. Citius) ;
Claramunt, Sergi (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Garcia-Loureiro, Antonio (Universidade de Santiago de Compostela. Citius) ;
Porti i Pujal, Marc (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Couso, Carlos (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Martin Martinez, Javier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
A more realistic approach to evaluate the impact of polycrystalline metal gates on the MOSFET variability is presented. 2D experimental workfunction maps of a polycrystalline TiN layer were obtained by Kelvin Probe Force Microscopy with a nanometer resolution. [...]
2019 - 10.1063/1.5090855
Applied physics letters, Vol. 114, issue 9 (March 2019) , art. 93502
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6 p, 992.9 KB |
Effect of asymmetric concentration profile on thermal conductivity in Ge/SiGe superlattices
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Hahn, Konstanze R. (Universita degli Studi Di Cagliari. Dipartimento di Fisica) ;
Cecchi, Stefano (Paul-Drude-Institut für Festkörperelektronik. Department of Epitaxy) ;
Colombo, Luciano (Institut Català de Nanociència i Nanotecnologia)
The effect of the chemical composition in Si/Ge-based superlattices on their thermal conductivity has been investigated using molecular dynamics simulations. Simulation cells of Ge/SiGe superlattices have been generated with different concentration profiles such that the Si concentration follows a step-like, a tooth-saw, a Gaussian, and a gamma-type function in direction of the heat flux. [...]
2016 - 10.1063/1.4949491
Applied physics letters, Vol. 108, issue 20 (May 2016) , art. 203102
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8.
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5 p, 1.0 MB |
α,ω -dihexyl-sexithiophene thin films for solution-gated organic field-effect transistors
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Schamoni, Hannah (Walter Schottky Institut) ;
Noever, Simon (Ludwig-Maximilians-Universität München. Fakultät für Physik) ;
Nickel, Bert (Ludwig-Maximilians-Universität München. Fakultät für Physik) ;
Stutzmann, Martin (Walter Schottky Institut) ;
Garrido, Jose (Institut Català de Nanociència i Nanotecnologia)
While organic semiconductors are being widely investigated for chemical and biochemical sensing applications, major drawbacks such as the poor device stability and low charge carrier mobility in aqueous electrolytes have not yet been solved to complete satisfaction. [...]
2016 - 10.1063/1.4942407
Applied physics letters, Vol. 108, issue 7 (Feb. 2016) , art. 73301
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6 p, 1.6 MB |
Effect of channel thickness on noise in organic electrochemical transistors
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Polyravas, Anastasios G. (University of Cambridge. Department of Engineering) ;
Schaefer, Nathan (Institut Català de Nanociència i Nanotecnologia) ;
Curto, Vicenzo Fabio (University of Cambridge. Department of Engineering) ;
Bonaccini Calia, Andrea (Institut Català de Nanociència i Nanotecnologia) ;
Guimerà Brunet, Anton (Institut de Microelectrònica de Barcelona) ;
Garrido, Jose (Institut Català de Nanociència i Nanotecnologia) ;
Malliaras, George (University of Cambridge. Department of Engineering)
Organic electrochemical transistors (OECTs) have been widely used as transducers in electrophysiology and other biosensing applications. Their identifying characteristic is a transconductance that increases with channel thickness, and this provides a facile mechanism to achieve high signal amplification. [...]
2020 - 10.1063/5.0019693
Applied physics letters, Vol. 117, issue 7 (August 2020) , art. 73302
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