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Depósito Digital de Documentos de la UAB Encontrados 7 registros  La búsqueda tardó 0.03 segundos. 
1.
Low-frequency noise parameter extraction method for single-layer graphene FETs / Mavredakis, Nikolaos (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Wei, Wei (Université de Lille. Institute of Electronics, Microelectronics and Nanotechnology) ; Pallecchi, Emiliano (Université de Lille. Institute of Electronics, Microelectronics and Nanotechnology) ; Vignaud, Dominique (Université de Lille. Institute of Electronics, Microelectronics and Nanotechnology) ; Happy, Henri (Université de Lille. Institute of Electronics, Microelectronics and Nanotechnology) ; Garcia Cortadella, Ramon (Institut Català de Nanociència i Nanotecnologia) ; Schaefer, Nathan (Institut Català de Nanociència i Nanotecnologia) ; Bonaccini Calia, Andrea (Institut Català de Nanociència i Nanotecnologia) ; Garrido, Jose (Institut Català de Nanociència i Nanotecnologia) ; Jiménez Jiménez, David (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
In this article, a detailed parameter extraction methodology is proposed for low-frequency noise (LFN) in single-layer (SL) graphene transistors (GFETs) based on a recently established compact LFN model. [...]
2020 - 10.1109/TED.2020.2978215
IEEE transactions on electron devices, Vol. 67, issue 5 (May 2020) , p. 2093-2099  
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2.
7 p, 2.6 MB A First Evaluation of Thick Oxide 3C-SiC MOS Capacitors Reliability / Li, Fan (University of Warwick) ; Mawby, Philip A. (University of Warwick) ; Song, Qiu (University of Warwick) ; Perez-Tomas, Amador (Institut Català de Nanociència i Nanotecnologia) ; Shah, Vishal (University of Warwick) ; Sharma, Yogesh (Dynex Semiconductor Ltd.) ; Hamilton, Dean P. (De Montfort University) ; Fisher, Craig (University of Warwick) ; Gammon, Peter (University of Warwick) ; Jennings, M.R. (Swansea University)
Despite the recent advances in 3C-SiC technology, there is a lack of statistical analysis on the reliability of SiO layers on 3C-SiC, which is crucial in power MOS device developments. This article presents a comprehensive study of the medium-and long-term time-dependent dielectric breakdowns (TDDBs) of 65-nm-thick SiO layers thermally grown on a state-of-the-art 3C-SiC/Si wafer. [...]
2020 - 10.1109/TED.2019.2954911
IEEE transactions on electron devices, Vol. 67, Issue 1 (January 2020) , p. 237-242  
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3.
8 p, 3.6 MB Study on the Connection Between the Set Transient in RRAMs and the Progressive Breakdown of Thin Oxides / Aguirre, Fernando Leonel (Universidad Tecnológica Nacional (Buenos Aires, Argentina)) ; Rodríguez Fernández, Alberto (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Pazos, Sebastián Matías (Universidad Tecnológica Nacional (Buenos Aires, Argentina)) ; Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Miranda, Enrique Alberto (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Palumbo, Félix (Universidad Tecnológica Nacional (Buenos Aires, Argentina))
In this paper, the transition rate (TR) from the high-resistance state to the low-resistance state of a HfO-based resistive random access memory (RRAM) is investigated. The TR is statistically characterized by applying constant voltage stresses in the range from 0. [...]
2019 - 10.1109/TED.2019.2922555
IEEE transactions on electron devices, Vol. 66, Issue 8 (August 2019) , p. 3349-3355  
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4.
16 p, 2.3 MB Current Status and Opportunities of Organic Thin-Film Transistor Technologies / Guo, Xiaojun (Shanghai Jiao Tong University) ; Xu, Yong (Dongguk University (Seül)) ; Ogier, Simon (NeuDrive Limited) ; Nga Ng, Tse (University of California) ; Caironi, Mario (Center for Nano Science and Technology@PoliMi (Milà, Itàlia)) ; Perinot, Andrea (Center for Nano Science and Technology@PoliMi (Milà, Itàlia)) ; Li, Ling (Chinese Academy of Sciences (Beijing, Xina)) ; Zhao, Jiaqing (Shanghai Jiao Tong University) ; Tang, Wei (Shanghai Jiao Tong University) ; Sporea, Radu A. (University of Surrey) ; Nejim, Ahmed (Silvaco Europe Ltd) ; Carrabina Bordoll, Jordi (Universitat Autònoma de Barcelona. Departament de Microelectrònica i Sistemes Electrònics) ; Cain, Paul (FlexEnable Ltd.) ; Yan, Feng (The Hong Kong Polytechnic University)
Attributed to its advantages of super mechanical flexibility, very low-temperature processing, and compatibility with low cost and high throughput manufacturing, organic thin-film transistor (OTFT) technology is able to bring electrical, mechanical, and industrial benefits to a wide range of new applications by activating nonflat surfaces with flexible displays, sensors, and other electronic functions. [...]
2017 - 10.1109/TED.2017.2677086
IEEE transactions on electron devices, Vol. 64, Num. 5 (2017) , p. 1906-1921  
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5.
7 p, 2.4 MB The role of the Fermi level pinning in gate tunable graphene-semiconductor junctions / Chaves Romero, Ferney Alveiro (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Jiménez Jiménez, David (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
Graphene based transistors relying on a conventional structure cannot switch properly because of the absence of an energy gap in graphene. To overcome this limitation, a barristor device was proposed, whose operation is based on the modulation of the graphene-semiconductor (GS) Schottky barrier by means of a top gate, and demonstrating an ON-OFF current ratio up to 10⁵. [...]
2016 - 10.1109/TED.2016.2606139
IEEE transactions on electron devices, Vol. 63, no. 11 (Nov. 2016) , p. 4521-4526  
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6.
7 p, 921.0 KB Large-signal model of graphene field-effect transistors. Part II : circuit performance benchmarking / Pasadas, Francisco (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Jiménez Jiménez, David (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
This paper presents a circuit performance benchmarking using the large-signal model of graphene field effect transistor reported in Part I of this two-part paper. To test the model, it has been implemented in a circuit simulator. [...]
2016 - 10.1109/TED.2016.2563464
IEEE transactions on electron devices, Vol. 63, Issue 7 (July 2016) , p. 2942 - 2947  
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7.
6 p, 1.8 MB Large-signal model of graphene field-effect transistors. Part I : compact modeling of GFET intrinsic capacitances / Pasadas, Francisco (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Jiménez Jiménez, David (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
We present a circuit-compatible compact model of the intrinsic capacitances of graphene field-effect transistors (GFETs). Together with a compact drain current model, a large-signal model of GFETs is developed combining both models as a tool for simulating the electrical behavior of graphene-based integrated circuits, dealing with the DC, transient behavior, and frequency response of the circuit. [...]
2016 - 10.1109/TED.2016.2570426
IEEE transactions on electron devices, Vol. 63 Issue 7 (July 2016) , p. 2936 - 2941  
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