Dipòsit Digital de Documents de la UAB 33 registres trobats  1 - 10següentfinal  anar al registre: La cerca s'ha fet en 0.01 segons. 
1.
6 p, 3.6 MB Thermal rectification in silicon by a graded distribution of defects / Dettori, Riccardo (Università di Cagliari. Dipartimento di Fisica) ; Melis, Claudio (Università di Cagliari. Dipartimento di Fisica) ; Rurali, Riccardo (Institut de Ciència de Materials de Barcelona) ; Colombo, Luciano (Institut Català de Nanociència i Nanotecnologia)
We discuss about computer experiments based on nonequilibrium molecular dynamics simulations providing evidence that thermal rectification can be obtained in bulk Si by a non-uniform distribution of defects. [...]
2016 - 10.1063/1.4953142
Journal of applied physics, Vol. 119, issue 21 (June 2016) , art. 215102  
2.
27 p, 4.8 MB Ultraviolet pulsed laser irradiation of multi-walled carbon nanotubes in nitrogen atmosphere / Pérez del Pino, Ángel (Institut de Ciència de Materials de Barcelona) ; Gyorgy, Eniko (Institut de Ciència de Materials de Barcelona) ; Cabana Jiménez, Laura (Institut de Ciència de Materials de Barcelona) ; Ballesteros, Belén (Institut Català de Nanociència i Nanotecnologia) ; Tobias, Gerard (Institut de Ciència de Materials de Barcelona)
Laser irradiation of randomly oriented multi-walled carbon nanotube (MWCNT) networks has been carried out using a pulsed Nd:YAG UV laser in nitrogen gas environment. The evolution of the MWCNT morphology and structure as a function of laser fluence and number of accumulated laser pulses has been studied using electron microscopies and Raman spectroscopy. [...]
2014 - 10.1063/1.4864776
Journal of applied physics, Vol. 115, issue 9 (March 2014) , art. 93501  
3.
11 p, 213.0 KB Physical model of the contact resistivity of metal-graphene junctions / Chaves Romero, Ferney Alveiro (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Jiménez Jiménez, David (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Cummings, Aron (Institut Català de Nanociència i Nanotecnologia) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
While graphene-based technology shows great promise for a variety of electronic applications, including radio-frequency devices, the resistance of the metal-graphene contact is a technological bottleneck for the realization of viable graphene electronics. [...]
2014 - 10.1063/1.4874181
Journal of applied physics, Vol. 115, issue 16 (April 2014) , art. 164513  
4.
10 p, 5.1 MB Graphene spintronics : puzzling controversies and challenges for spin manipulation / Roche, Stephan (Institut Català de Nanociència i Nanotecnologia) ; Valenzuela, Sergio O. (Institut Català de Nanociència i Nanotecnologia)
This article presents the current puzzling controversy between theory and experimental results concerning the mechanisms leading to spin relaxation in graphene-based materials. On the experimental side, it is surprising that regardless of the quality of the graphene monolayer, which is characterized by the carrier mobility, the typical Hanle precession measurements yield spin diffusion times in the order of which is several orders of magnitude below the theoretical estimates based on the expected low intrinsic spin-orbit coupling in graphene. [...]
2014 - 10.1088/0022-3727/47/9/094011
Journal of Physics D: Applied Physics, Vol. 47 issue 9 (March 2014) , art. 94011  
5.
9 p, 2.6 MB Analysis and simulation of the multiple resistive switching modes occurring in HfO x -based resistive random access memories using memdiodes / Petzold, S. (Technische Universität Darmstadt. Institute of Materials Science) ; Miranda, Enrique (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Sharath, S.U. (Technische Universität Darmstadt. Institute of Materials Science) ; Muñoz Gorriz, Jordi (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Vogel, T. (Technische Universität Darmstadt. Institute of Materials Science) ; Piros, E. (Technische Universität Darmstadt. Institute of Materials Science.) ; Kaiser, N. (Technische Universität Darmstadt. Institute of Materials Science) ; Eilhardt, R. (Technische Universität Darmstadt. Institute of Materials Science) ; Zintler, A. (Technische Universität Darmstadt. Institute of Materials Science) ; Molina-Luna, L. (Technische Universität Darmstadt. Institute of Materials Science) ; Suñé, Jordi (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Alff, L. (Technische Universität Darmstadt. Institute of Materials Science)
In this work, analysis and simulation of all experimentally observed switching modes in hafnium oxide based resistive random access memories are carried out using a simplified electrical conduction model. [...]
2019 - 10.1063/1.5094864
Journal of applied physics, Vol. 125, issue 23 (June 2019) , art. 234503  
6.
8 p, 652.2 KB Integrability of Hamiltonian systems with two degrees of freedom and homogenous potential of degree zero / Llibre, Jaume (Universitat Autònoma de Barcelona. Departament de Matemàtiques) ; Valls, Clàudia 1973- (Universidade de Lisboa. Instituto Superior Técnico. Departamento de Matemàtica)
We provide necessary conditions in order that the Hamiltonian systems with Hamiltonian H = 1/2 (p2 1 + p2 2) + V (q1,q2), and one of the following potentials V1 = a0q1 + a1q2/a2q1 + a3q2, V2 = a0q2 1 + a1q1q2 + a2q2 2/a3q2 1 + a4q1q2 + a5q2 2, V3 = a0qn 2 + a1qn−1 2 q1 + . [...]
2018 - 10.4236/jamp.2018.611184
Journal of Applied Mathematics and Physics, Vol. 6, Num. 11 (November 2018) , p. 2192-2201
2 documents
7.
24 p, 1.1 MB Persistent M2 phase in strongly strained (011)-oriented grains in VO2 films grown on sapphire (001) in reactive sputtering / Matsuoka, K. (Tokai University. Graduate School of Engineering) ; Okimura, Kunio (Tokai University. Graduate School of Engineering) ; Azhan, Nurul Hasnis (Universiti Kuala Lumpur British Malaysian Institute. Electrical Engineering Section) ; Zaghrioui, Mustapha (Laboratoire GREMAN) ; Sakai, Joe (Institut Català de Nanociència i Nanotecnologia)
We report on the first observation of the persistent M2 phase in strongly strained (011)-oriented grains in VO₂ films grown on Al₂O₃ (001) substrates by means of conventional rf reactive sputtering under adequate deposition conditions. [...]
2019 - 10.1063/1.5068700
Journal of applied physics, Vol. 125, issue 16 (2019) , art. 165304  
8.
15 p, 376.8 KB Strain-induced resistance change in V2O3 films on piezoelectric ceramic disks / Sakai, Joe (Laboratoire GREMAN (Tours)) ; Bavencoffe, Maxime (Laboratoire GREMAN (Tours)) ; Negulescu, Beatrice (Laboratoire GREMAN (Tours)) ; Limelette, Patrice (Laboratoire GREMAN (Tours)) ; Wolfman, Jérôme (Laboratoire GREMAN (Tours)) ; Tateyama, Akinori (Tokyo Institute of Technology) ; Funakubo, Hiroshi (Tokyo Institute of Technology)
We prepared a stacked structure consisting of a quasi-free-standing functional oxide thin film and a ceramic piezoelectric disk and observed the effect of the piezoelectric disk deformation on the resistance of the thin film. [...]
2019 - 10.1063/1.5083941
Journal of applied physics, Vol. 125, issue 11 (March 2019) , art. 115102  
9.
7 p, 2.0 MB Thermodynamic conditions during growth determine the magnetic anisotropy in epitaxial thin-films of La₀.₇ Sr₀.₃MnO₃ / Vila-Fungueiriño, J.M. (Universidade de Santiago de Compostela. Centro Singular de Investigación en Química Biolóxica e Materiais Moleculares) ; Bui, Cong Tinh (Universidade de Santiago de Compostela. Centro Singular de Investigación en Química Biolóxica e Materiais Moleculares) ; Rivas Murias, B. (Universidade de Santiago de Compostela. Centro Singular de Investigación en Química Biolóxica e Materiais Moleculares) ; Winkler, Elin (Centro Atómico Bariloche) ; Milano, J. (Centro Atómico Bariloche) ; Santiso, José (Institut Català de Nanociència i Nanotecnologia) ; Rivadulla, Francisco (Universidade de Santiago de Compostela. Centro Singular de Investigación en Química Biolóxica e Materiais Moleculares)
The suitability of a particular material for use in magnetic devices is determined by the process of magnetization reversal/relaxation, which in turn depends on the magnetic anisotropy. Therefore, designing new ways to control magnetic anisotropy in technologically important materials is highly desirable. [...]
2016 - 10.1088/0022-3727/49/31/315001
Journal of Physics D: Applied Physics, Vol. 49, Issue 31 (August 2016) , art. 315001  
10.
14 p, 8.6 MB Sensitivity analysis for improving nanomechanical photonic transducers biosensors / Fariña, David (Institut Català de Nanociència i Nanotecnologia) ; Álvarez, Mar (Institut Català de Nanociència i Nanotecnologia) ; Márquez, Salomón (Institut Català de Nanociència i Nanotecnologia) ; Dominguez, Carlos (Institut de Microelectrònica de Barcelona) ; Lechuga, Laura (Institut Català de Nanociència i Nanotecnologia)
The achievement of high sensitivity and highly integrated transducers is one of the main challenges in the development of high-throughput biosensors. The aim of this study is to improve the final sensitivity of an opto-mechanical device to be used as a reliable biosensor. [...]
2015 - 10.1088/0022-3727/48/33/335401
Journal of Physics D: Applied Physics, Vol. 48, Issue 33 (August 2015) , art. 335401  

Dipòsit Digital de Documents de la UAB : 33 registres trobats   1 - 10següentfinal  anar al registre:
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