UAB Digital Repository of Documents 3 records found  Search took 0.02 seconds. 
1.
7 p, 1.2 MB Capacitive vs Faradaic Energy Storage in a Hybrid Cell with LiFePO4/RGO Positive Electrode and Nanocarbon Negative Electrode / Cabán Huertas, Zahilia (Institut Català de Nanociència i Nanotecnologia) ; Dubal, Deepak P. (Institut Català de Nanociència i Nanotecnologia) ; Ayyad, Omar (Al-Quds University. Department of Materials Engineering) ; Gómez Romero, Pedro (Institut Català de Nanociència i Nanotecnologia)
We report an advanced device based on a Nitrogen-doped Carbon Nanopipes (N-CNP) negative electrode and a lithium iron phosphate (LiFePO) positive electrode. We carefully balanced the cell composition (charge balance) and suppressed the initial irreversible capacity of the anode in the round of few cycles. [...]
2017 - 10.1149/2.0211701jes
Journal of the Electrochemical Society, Vol. 164, Issue 1 (2017) , p. A6140-A6146  
2.
6 p, 510.6 KB Chemical strain and oxidation-reduction kinetics of epitaxial thin films of mixed ionic-electronic conducting oxides determined by x-ray diffraction / Moreno, Roberto (Institut Català de Nanociència i Nanotecnologia) ; Zapata Correa, James Arturo (Institut Català de Nanociència i Nanotecnologia) ; Roqueta, Jaume (Institut Català de Nanociència i Nanotecnologia) ; Bagués Salgueró, Núria (Institut Català de Nanociència i Nanotecnologia) ; Santiso, José (Institut Català de Nanociència i Nanotecnologia)
X-ray diffraction, at high T's and switching between N/air atmospheres, was used to compare the chemical expansion due oxygen non-stoichiometry variations between epitaxial films of different mixed ionic-electronic conductors: LaSrCoO(LSC), BaSrCoFeO(BSCF), LaNiO(LNO), LaNiO(L2NO) and GaBaCoO(GBCO) and LaSrMnO(LSM). [...]
2014 - 10.1149/2.0091411jes
Journal of the Electrochemical Society, Vol. 161, Issue 11 (2014) , p. F3046-F3051  
3.
41 p, 418.7 KB Dielectric breakdown in ultra-thin Hf based gate stacks : a resistive switching phenomenon / Rodríguez Martínez, Rosana (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Martín Martínez, Javier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Crespo Yepes, Albert (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Porti i Pujal, Marc (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Aymerich Humet, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
In this work, the temperature dependence of the resistive switching-related currents (gate and drain) in MOSFETs with ultra-thin Hf based high-k dielectric has been analyzed, for the two dielectric conductivity states. [...]
2012 - 10.1149/2.012206jes
Journal of the Electrochemical Society, Vol. 159 Issue 5 (2012) , p. H529-H535  

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