Dipòsit Digital de Documents de la UAB 263 registres trobats  1 - 10següentfinal  anar al registre: La cerca s'ha fet en 0.01 segons. 
1.
22 p, 452.7 KB A solar transistor and photoferroelectric memory / Pérez Tomàs, Amador (Institut Català de Nanociència i Nanotecnologia) ; Lima, F. Anderson S. (Institut Català de Nanociència i Nanotecnologia) ; Billon, Quentin (Institut Català de Nanociència i Nanotecnologia) ; Shirley, Ian (Institut Català de Nanociència i Nanotecnologia) ; Catalan, Gustau (Institut Català de Nanociència i Nanotecnologia) ; Lira Cantú, Mónica (Institut Català de Nanociència i Nanotecnologia)
This study presents a new self-powered electronic transistor concept "the solar transistor. " The transistor effect is enabled by the functional integration of a ferroelectric-oxide thin film and an organic bulk heterojunction. [...]
2018 - 10.1002/adfm.201707099
Advanced functional materials, Vol. 28, issue 17 (April, 2018) , art. 1707099  
2.
8 p, 3.1 MB 2 × 2 charge density wave in single-layer TiTe₂ / Guster, Bogdan (Institut Català de Nanociència i Nanotecnologia) ; Robles, Roberto (Institut Català de Nanociència i Nanotecnologia) ; Pruneda, Miguel (Institut Català de Nanociència i Nanotecnologia) ; Canadell Casanova, Enric (Institut de Ciència de Materials de Barcelona) ; Ordejón Rontomé, Pablo (Institut Català de Nanociència i Nanotecnologia)
A density functional theory study concerning the origin of the recently reported 2 × 2 charge density wave (CDW) instability in single-layer TiTe₂ is reported. It is shown that, whereas calculations employing the semi-local functional PBE favor the undistorted structure, the hybrid functional HSE06 correctly predicts a 2 × 2 distortion. [...]
2019 - 10.1088/2053-1583/aaf20b
2D Materials, Vol. 6, issue 1 (Jan. 2019) , p. 15027  
3.
15 p, 790.9 KB Probing the nanoscale origin of strain and doping in graphene-hBN heterostructures / Vincent, Tom (National Physical Laboratory (United Kingdom)) ; Panchal, Vishal (Bruker Nano Surfaces) ; Booth, Timothy J (Danmarks Tekniske Universitet. Center for Nanostructured Graphene) ; Power, Stephen R. (Institut Català de Nanociència i Nanotecnologia) ; Jauho, Antti-Pekka (Danmarks Tekniske Universitet. Center for Nanostructured Graphene) ; Antonov, Vladimir (University of London. Royal Holloway) ; Kazakova, Olga (National Physical Laboratory (United Kingdom))
We use confocal Raman microscopy and a recently proposed vector analysis scheme to investigate the nanoscale origin of strain and carrier concentration in exfoliated graphene-hexagonal boron nitride (hBN) heterostructures on silicon dioxide (SiO). [...]
2019 - 10.1088/2053-1583/aaf1dc
2D Materials, Vol. 6, issue 1 (Jan. 2019) , art. 15022  
4.
19 p, 432.5 KB Growth and luminescence of polytypic InP on epitaxial graphene / Mukherjee, Samik (Polytechnique Montréal. Département de génie physique) ; Nateghi, Nima (Polytechnique Montréal. Département de génie physique) ; Jacobberger, Robert M. (University of Wisconsin–Madison. Department of Materials Science and Engineering) ; Bouthillier, Etienne (Polytechnique Montréal. Département de génie physique) ; De La Mata, Maria (Institut Català de Nanociència i Nanotecnologia) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Coenen, Toon (DELMIC BV) ; Cardinal, Dhan (Université de Montréal. Département de chimie) ; Levesque, Pierre (Université de Montréal. Département de chimie) ; Desjardins, Patrick (Polytechnique Montréal. Département de génie physique) ; Martel, Richard (Université de Montréal. Département de chimie) ; Arnold, Michael S. (University of Wisconsin–Madison. Department of Materials Science and Engineering) ; Moutanabbir, Oussama (Polytechnique Montréal. Département de génie physique)
Van der Waals epitaxy is an attractive alternative to direct heteroepitaxy where the forced coherency at the interface cannot sustain large differences in lattice parameters and thermal expansion coefficients between the substrate and the epilayer. [...]
2018 - 10.1002/adfm.201705592
Advanced functional materials, Vol. 28, issue 8 (Feb. 2018) , art. 1705592  
5.
14 p, 1.0 MB Flexoelectricity in bones / Vasquez-Sancho, Fabián (Institut Català de Nanociència i Nanotecnologia) ; Abdollahi, Amir (Universitat Politècnica de Catalunya. Laboratori de Càlcul Numèric) ; Damjanovic, Dragan (Ecole Politechnique Federale de Lausanne) ; Catalan, Gustau (Institut Català de Nanociència i Nanotecnologia)
Bones generate electricity under pressure, and this electromechanical behavior is thought to be essential for bone's self-repair and remodeling properties. The origin of this response is attributed to the piezoelectricity of collagen, which is the main structural protein of bones. [...]
2018 - 10.1002/adma.201705316
Advanced materials, Vol. 30, issue 9 (March 2018) , art. 1705316  
6.
9 p, 719.0 KB Polinomios con raíces entrelazadas / Durán Guardeño, Antonio José (Universidad de Sevilla. Departamento de Análisis Matemático) ; Pérez Riera, Mario (Universidad de Zaragoza. Departamento de Matemáticas) ; Varona Malumbres, Juan Luis (Universidad de La Rioja. Departamento de Matemáticas y Computación)
El objetivo más inmediato de la teoría de aproximación es proporcionar objetos sencillos y fácilmente calculables (polinomios, por ejemplo) que se aproximen a unos objetos dados (funciones de variable real, por ejemplo). [...]
2019
Materials matemàtics, 2019, p. 1-9  
7.
19 p, 2.2 MB Rietveld quantitative phase analysis of oil well cement: in situ hydration study at 150 bars and 150 °C / Fraga, Edmundo (ALBA Laboratori de Llum de Sincrotró) ; Cuesta, Ana (Universidad de Málaga. Departamento de Química Inorgánica, Cristalografía y Mineralogía) ; Zea-Garcia, Jesus D. (Universidad de Málaga. Departamento de Química Inorgánica, Cristalografía y Mineralogía) ; Gómez De la Torre, Angeles (Universidad de Málaga. Departamento de Química Inorgánica, Cristalografía y Mineralogía) ; Yáñez Casal, Armando (Universidade da Coruña. Departamento de Ingeniería Industrial) ; García Aranda, Miguel Ángel (ALBA Laboratori de Llum de Sincrotró)
Oil and gas well cements are multimineral materials that hydrate under high pressure and temperature. Their overall reactivity at early ages is studied by a number of techniques including through the use of the consistometer. [...]
2019
Materials, Vol. 12, issue 12 (June 2019) , art. 1897  
8.
16 p, 1.1 MB Incorporation of Counter Ions in Organic Molecules : New Strategy in Developing Dopant-Free Hole Transport Materials for Efficient Mixed-Ion Perovskite Solar Cells / Zhang, Jinbao (Uppsala University. Department of Chemistry–Ångström Laboratory) ; Xu, Bo (KTH Royal Institute of Technology) ; Yang, Li (Uppsala University. Department of Engineering Science) ; Mingorance, Alba (Institut Català de Nanociència i Nanotecnologia) ; Ruan, Changqing (Uppsala University. Department of Engineering Science) ; Hua, Yong (KTH-Royal Institute of Technology) ; Wang, Linqin (KTH Royal Institute of Technology) ; Vlachopoulos, Nick (École Polytechnique Fédérale de Lausanne) ; Lira Cantú, Mónica (Institut Català de Nanociència i Nanotecnologia) ; Boschloo, Gerrit (Uppsala University. Department of Chemistry–Ångström Laboratory) ; Hagfeldt, Anders (Ecole Polytechnique Fédérale de Lausanne) ; Sun, Licheng (Dalian University of Technology) ; Johansson, Erik M.J. (Uppsala University. Department of Chemistry–Ångström Laboratory)
Hole transport matertial (HTM) as charge selective layer in perovskite solar cells (PSCs) plays an important role in achieving high power conversion efficiency (PCE). It is known that the dopants and additives are necessary in the HTM in order to improve the hole conductivity of the HTM as well as to obtain high efficiency in PSCs, but the additives can potentially induce device instability and poor device reproducibility. [...]
2017 - 10.1002/aenm.201602736
Advanced Energy Materials, Vol. 7, Issue 14 (July 2017) , art. 1602736  
9.
36 p, 1.9 MB Time course study of long-term biocompatibility and foreign body reaction to intraneural polyimide-based implants / de la Oliva, Natàlia (Universitat Autònoma de Barcelona. Institut de Neurociències) ; Navarro, Xavier. (Xavier) (Universitat Autònoma de Barcelona. Institut de Neurociències) ; Del Valle, Jaume (Institut Català de Nanociència i Nanotecnologia)
The foreign body reaction (FBR) against an implanted device is characterized by the formation of a fibrotic tissue around the implant. In the case of interfaces for peripheral nerves, used to stimulate specific group of axons and to record different nerve signals, the FBR induces a matrix deposition around the implant creating a physical separation between nerve fibers and the interface that may reduce its functionality over time. [...]
2018 - 10.1002/jbm.a.36274
Journal of biomedical materials research : Part A, Vol. 106, Issue 3 (March 2018) , p. 746-757  
10.
37 p, 2.3 MB Seeded Growth Synthesis of Au-Fe3O4 Heterostructured Nanocrystals : Rational Design and Mechanistic Insights / Fantechi, Elvira (Institut Català de Nanociència i Nanotecnologia) ; Gómez Roca, Alejandro (Institut Català de Nanociència i Nanotecnologia) ; Sepúlveda Martínez, Borja (Institut Català de Nanociència i Nanotecnologia) ; Torruella, Pau (Universitat de Barcelona. Departament d'Electrònica) ; Estradé, Sònia (Universitat de Barcelona. Departament d'Electrònica) ; Peiró, Francesca (Universitat de Barcelona. Departament d'Electrònica) ; Coy, Emerson (Adam Mickiewicz University) ; Jurga, Stefan (Adam Mickiewicz University) ; Gómez Bastús, Neus (Institut Català de Nanociència i Nanotecnologia) ; Nogués i Sanmiquel, Josep (Institut Català de Nanociència i Nanotecnologia) ; Puntes, Víctor (Institut Català de Nanociència i Nanotecnologia)
Multifunctional hybrid nanoparticles comprising two or more entities with different functional properties are gaining ample significance in industry and research. Due to its combination of properties, a particularly appealing example is Au-FeO composite nanoparticles. [...]
2017 - 10.1021/acs.chemmater.7b00608
Chemistry of Materials, Vol. 29, Issue 9 (May 2017) , p. 4022-4035  

Dipòsit Digital de Documents de la UAB : 263 registres trobats   1 - 10següentfinal  anar al registre:
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