UAB Digital Repository of Documents 19 records found  1 - 10next  jump to record: Search took 0.00 seconds. 
1.
22 p, 841.0 KB Template-Assisted Scalable Nanowire Networks / Friedl, Martin (École Polytechnique Fédérale de Lausanne) ; Cerveny, Kris (University of Basel. Department of Physics) ; Weigele, Pirmin (University of Basel. Department of Physics) ; Tütüncüoglu, Gözde (École Polytechnique Fédérale de Lausanne) ; Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia) ; Huang, Chunyi (Northwestern University. Department of Materials Science and Engineering) ; Patlatiuk, Taras (University of Basel. Department of Physics) ; Potts, Heidi A. (École Polytechnique Fédérale de Lausanne) ; Sun, Zhiyuan (Northwestern University. Department of Materials Science and Engineering) ; Hill, Megan O. (Northwestern University. Department of Materials Science and Engineering) ; Güniat, Lucas (École Polytechnique Fédérale de Lausanne) ; Kim, Wonjong (École Polytechnique Fédérale de Lausanne) ; Zamani, Mahdi (École Polytechnique Fédérale de Lausanne) ; Dubrovskii, Vladimir G. (ITMO University) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Lauhon, Lincoln J. (Northwestern University. Department of Materials Science and Engineering) ; Zumbühl, Dominik M. (University of Basel. Department of Physics) ; Fontcuberta i Morral, Anna (École Polytechnique Fédérale de Lausanne)
Topological qubits based on Majorana Fermions have the potential to revolutionize the emerging field of quantum computing by making information processing significantly more robust to decoherence. Nanowires are a promising medium for hosting these kinds of qubits, though branched nanowires are needed to perform qubit manipulations. [...]
2018 - 10.1021/acs.nanolett.8b00554
Nano letters, Vol. 18, Issue 4 (April 2018) , p. 2666-2671
2 documents
2.
9 p, 605.3 KB 3D Visualization of the Iron Oxidation State in FeO/Fe3O4 Core-Shell Nanocubes from Electron Energy Loss Tomography / Torruella, Pau (Universitat de Barcelona. Departament d'Electrònica) ; Arenal, Raúl (Fundación ARAID) ; Peña, Francisco de la (University of Cambridge. Department of Materials Science and Metallurgy) ; Saghi, Zineb (CEA-LETI) ; Yedra Cardona, Lluís (Universitat de Barcelona. Departament d'Electrònica) ; Eljarrat Ascunce, Alberto (Universitat de Barcelona. Departament d'Electrònica) ; López Conesa, Lluís (Universitat de Barcelona. Departament d'Electrònica) ; Estrader, Marta (Laboratoire de Physique et Chimie des Nano-objects) ; López Ortega, Alberto (Università degli Studi di Firenze) ; Salazar Álvarez, Germán (Stockholm University) ; Nogués i Sanmiquel, Josep (Institut Català de Nanociència i Nanotecnologia) ; Ducati, Caterina (University of Cambridge. Department of Materials Science and Metallurgy) ; Midgley, Paul A. (University of Cambridge. Department of Materials Science and Metallurgy) ; Peiró, Francesca (Universitat de Barcelona. Departament d'Electrònica) ; Estradé, Sònia (Universitat de Barcelona. Departament d'Electrònica)
The physicochemical properties used in numerous advanced nanostructured devices are directly controlled by the oxidation states of their constituents. In this work we combine electron energy-loss spectroscopy, blind source separation, and computed tomography to reconstruct in three dimensions the distribution of Fe and Fe ions in a FeO/FeO core/shell cube-shaped nanoparticle with nanometric resolution. [...]
2016 - 10.1021/acs.nanolett.6b01922
Nano letters, Vol. 16, Issue 8 (August 2016) , p. 5068-5073  
3.
26 p, 1.0 MB Nanotexturing to Enhance Photoluminescent Response of Atomically Thin Indium Selenide with Highly Tunable Band Gap / Brotons Gisbert, Mauro (Universitat de València) ; Andrés Penares, Daniel (Universitat de València) ; Suh, Joonki (University of California. Department of Materials Science and Engineering) ; Hidalgo, Francisco (Institut Català de Nanociència i Nanotecnologia) ; Abargues, Rafael (Intenanomat S.L.) ; Rodríguez Cantó, Pedro J. (Intenanomat S.L.) ; Segura, Alfredo (Universitat de València) ; Cros, Ana (Universitat de València) ; Tobias, Gerard (Institut de Ciencia de Materials de Barcelona) ; Canadell Casanova, Enric (Institut de Ciència de Materials de Barcelona) ; Ordejón Rontomé, Pablo (Institut Català de Nanociència i Nanotecnologia) ; Wu, Junqiao (University of California. Department of Materials Science and Engineering) ; Martínez Pastor, Juan P. (Universitat de València) ; Sánchez Royo, Juan F. (Universitat de València)
Manipulating properties of matter at the nanoscale is the essence of nanotechnology, which has enabled the realization of quantum dots, nanotubes, metamaterials, and two-dimensional materials with tailored electronic and optical properties. [...]
2016 - 10.1021/acs.nanolett.6b00689
Nano letters, Vol. 16, Issue 5 (April 2016) , p. 3221-3229  
4.
10 p, 8.1 MB Selectivity Map for Molecular Beam Epitaxy of Advanced III-V Quantum Nanowire Networks / Aseev, Pavel (Delft University of Technology) ; Fursina, Alexandra (Delft University of Technology) ; Boekhout, Frenk (QuTech and Netherlands Organization for Applied Scientific Research) ; Krizek, Filip (University of Copenhagen) ; Sestoft, Joachim E. (University of Copenhagen) ; Borsoi, Francesco (Delft University of Technology) ; Heedt, Sebastian (Delft University of Technology) ; Wang, Guanzhong (Delft University of Technology) ; Binci, Luca (Delft University of Technology) ; Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia) ; Swoboda, Timm (Institut Català de Nanociència i Nanotecnologia) ; Koops, René (QuTech and Netherlands Organization for Applied Scientific Research) ; Uccelli, Emanuele (QuTech and Netherlands Organization for Applied Scientific Research) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Krogstrup, Peter (University of Copenhagen) ; Kouwenhoven, Leo P. (Delft University of Technology) ; Caroff, Philippe (Delft University of Technology)
Selective-area growth is a promising technique for enabling of the fabrication of the scalable III-V nanowire networks required to test proposals for Majorana-based quantum computing devices. However, the contours of the growth parameter window resulting in selective growth remain undefined. [...]
2019 - 10.1021/acs.nanolett.8b03733
Nano letters, Vol. 19, Issue 1 (January 2019) , p. 218-227  
5.
8 p, 2.8 MB Surface hydrogen enables subeutectic vapor-liquid-solid semiconductor nanowire growth / Sivaram, Saujen V. (Georgia Institute of Technology. School of Chemical and Biomolecular Engineering) ; Hui, Ho Yee (Georgia Institute of Technology. School of Chemical and Biomolecular Engineering) ; De La Mata, Maria (Institut Català de Nanociència i Nanotecnologia) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Filler, Michael A. (Georgia Institute of Technology. School of Chemical and Biomolecular Engineering)
Vapor-liquid-solid nanowire growth below the bulk metal-semiconductor eutectic temperature is known for several systems; however, the fundamental processes that govern this behavior are poorly understood. [...]
2016 - 10.1021/acs.nanolett.6b01640
Nano letters, Vol. 16, issue 11 (Sep. 2016) , p. 6717-6723  
6.
8 p, 9.7 MB Orientationally ordered silicon nanocrystal cuboctahedra in superlattices / Yu, Yixuan (University of Texas. Texas Materials Institute) ; Lu, Xiaotang (University of Texas. Texas Materials Institute) ; Guillaussier, Adrien (University of Texas. Texas Materials Institute) ; Voggu, Vikas Reddy (University of Texas. Texas Materials Institute) ; Pineros, William (University of Texas. Texas Materials Institute) ; De La Mata, Maria (Institut Català de Nanociència i Nanotecnologia) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Smilgies, Detlef-M. (Cornell University. Cornell High Energy Synchrotron Source) ; Truskett, Thomas M. (University of Texas. Texas Materials Institute) ; Korgel, Brian A. (University of Texas. Texas Materials Institute)
Uniform silicon nanocrystals were synthesized with cuboctahedral shape and passivated with 1-dodecene capping ligands. Transmission electron microscopy, electron diffraction, and grazing incidence wide-angle and small-angle X-ray scattering show that these soft cuboctahedra assemble into face-centered cubic superlattices with orientational order. [...]
2016 - 10.1021/acs.nanolett.6b04006
Nano Letters, Vol. 16, issue 12 (2016) , p. 7814-7821  
7.
18 p, 697.7 KB Mechanical tuning of LaAIO₃ SrTiO₃ interface conductivity / Sharma, P. (University of Nebraska–Lincoln. Department of Physics and Astronomy) ; Ryu, S. (University of Wisconsin-Madison. Department of Materials Science and Engineering) ; Burton, J.D. (University of Nebraska–Lincoln. Department of Physics and Astronomy) ; Paudel, T.R. (University of Nebraska–Lincoln. Department of Physics and Astronomy) ; Bark, C.W. (University of Wisconsin-Madison. Department of Materials Science and Engineering) ; Huang, Z. (National University of Singapore. Nanoscience and Nanotechnology Institute) ; Ariando, None (National University of Singapore. Nanoscience and Nanotechnology Institute) ; Tsymbal, E.Y. (University of Nebraska–Lincoln. Department of Physics and Astronomy) ; Catalan, Gustau (Institut Català de Nanociència i Nanotecnologia) ; Eom, C.B. (Department of Materials Science and Engineering, University of Wisconsin-Madison) ; Gruverman, A. (University of Nebraska–Lincoln. Department of Physics and Astronomy)
In recent years, complex-oxide heterostructures and their interfaces have become the focus of significant research activity, primarily driven by the discovery of emerging states and functionalities that open up opportunities for the development of new oxide-based nanoelectronic devices. [...]
2015 - 10.1021/acs.nanolett.5b01021
Nano letters, Vol. 15, issue 5 (May 2015) , p. 3547-3551  
8.
21 p, 1.0 MB High yield of gaas nanowire arrays on si mediated by the pinning and contact angle of Ga / Russo-Averchi, Eleonora (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; Vukajlovic Plestina, Jelena (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; Tütüncüoglu, Gözde (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; Matteini, Federico (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; Dalmau-Mallorquí, Anna (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; De La Mata, Maria (Institut de Ciència de Materials de Barcelona) ; Rüffer, Daniel (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; Potts, Heidi A. (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Conesa-Boj, Sonia (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs) ; Fontcuberta i Morral, Anna (Ecole Polytechnique Fédérale de Lausanne. Laboratoire des Matériaux Semiconducteurs)
GaAs nanowire arrays on silicon offer great perspectives in the optoelectronics and solar cell industry. To fulfill this potential, gold-free growth in predetermined positions should be achieved. Ga-assisted growth of GaAs nanowires in the form of array has been shown to be challenging and difficult to reproduce. [...]
2015 - 10.1021/nl504437v
Nano letters, Vol. 15, issue 5 (May 2015) , p. 2869-2874  
9.
8 p, 9.3 MB Position-controlled growth of GaN nanowires and nanotubes on diamond by molecular beam epitaxy / Schuster, Fabian (Walter Schottky Institut, Physics Department, Technische Universität München) ; Hetzl, Martin (Technische Universität München. Walter Schottky Institute) ; Weiszer, Saskia (Technische Universität München. Walter Schottky Institute) ; Garrido Ariza, José A. (Technische Universität München. Walter Schottky Institute) ; De La Mata, Maria (Institut de Ciència de Materials de Barcelona (ICMAB-CSIC)) ; Magén, César (Universidad de Zaragoza. Instituto de Nanociencia de Aragón) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Stutzmann, Martin (Technische Universität München. Walter Schottky Institute) ; ALBA Laboratori de Llum de Sincrotró
In this work the position-controlled growth of GaN nanowires (NWs) on diamond by means of molecular beam epitaxy is investigated. In terms of growth, diamond can be seen as a model substrate, providing information of systematic relevance also for other substrates. [...]
2015 - 10.1021/nl504446r
Nano letters, Vol. 15, issue 3 (Nov. 2015) , p. 1773-1779  
10.
10 p, 4.7 MB Phonon engineering in isotopically disordered silicon nanowires / Mukherjee, S. (Polytechnique Montréal. Département de génie physique) ; Givan, U. (Max-Planck-Institut für Mikrostrukturphysik) ; Senz, S. (Max-Planck-Institut für Mikrostrukturphysik) ; Bergeron, A. (Polytechnique Montréal. Département de génie physiquel) ; Francoeur, S. (Polytechnique Montréal. Département de génie physique) ; De La Mata, Maria (Institut Català de Nanociència i Nanotecnologia) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Sekiguchi, T. (Keio University. Department of Applied Physics and Physico-Informatics) ; Itoh, K.M. (Keio University. Department of Applied Physics and Physico-Informatics) ; Isheim, D. (Northwestern University. Department of Materials Science and Engineering) ; Seidman, D.N. (Northwestern University. Department of Materials Science and Engineering) ; Moutanabbir, O. (Polytechnique Montréal. Département de génie physique)
The introduction of stable isotopes in the fabrication of semiconductor nanowires provides an additional degree of freedom to manipulate their basic properties, design an entirely new class of devices, and highlight subtle but important nanoscale and quantum phenomena. [...]
2015 - 10.1021/acs.nanolett.5b00708
Nano letters, Vol. 15, issue 6 (Oct. 2015) , p. 3885-3893  

UAB Digital Repository of Documents : 19 records found   1 - 10next  jump to record:
Interested in being notified about new results for this query?
Set up a personal email alert or subscribe to the RSS feed.