Dipòsit Digital de Documents de la UAB 14 registres trobats  1 - 10següent  anar al registre: La cerca s'ha fet en 0.01 segons. 
1.
8 p, 2.8 MB Surface hydrogen enables subeutectic vapor-liquid-solid semiconductor nanowire growth / Sivaram, Saujen V. (Georgia Institute of Technology. School of Chemical and Biomolecular Engineering) ; Hui, Ho Yee (Georgia Institute of Technology. School of Chemical and Biomolecular Engineering) ; De La Mata, Maria (Institut Català de Nanociència i Nanotecnologia) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Filler, Michael A. (Georgia Institute of Technology. School of Chemical and Biomolecular Engineering)
Vapor-liquid-solid nanowire growth below the bulk metal-semiconductor eutectic temperature is known for several systems; however, the fundamental processes that govern this behavior are poorly understood. [...]
2016 - 10.1021/acs.nanolett.6b01640
Nano letters, Vol. 16, issue 11 (Sep. 2016) , p. 6717-6723  
2.
8 p, 9.7 MB Orientationally ordered silicon nanocrystal cuboctahedra in superlattices / Yu, Yixuan (University of Texas. Texas Materials Institute) ; Lu, Xiaotang (University of Texas. Texas Materials Institute) ; Guillaussier, Adrien (University of Texas. Texas Materials Institute) ; Voggu, Vikas Reddy (University of Texas. Texas Materials Institute) ; Pineros, William (University of Texas. Texas Materials Institute) ; De La Mata, Maria (Institut Català de Nanociència i Nanotecnologia) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Smilgies, Detlef-M. (Cornell University. Cornell High Energy Synchrotron Source) ; Truskett, Thomas M. (University of Texas. Texas Materials Institute) ; Korgel, Brian A. (University of Texas. Texas Materials Institute)
Uniform silicon nanocrystals were synthesized with cuboctahedral shape and passivated with 1-dodecene capping ligands. Transmission electron microscopy, electron diffraction, and grazing incidence wide-angle and small-angle X-ray scattering show that these soft cuboctahedra assemble into face-centered cubic superlattices with orientational order. [...]
2016 - 10.1021/acs.nanolett.6b04006
Nano Letters, Vol. 16, issue 12 (2016) , p. 7814-7821  
3.
18 p, 697.7 KB Mechanical tuning of LaAIO₃ SrTiO₃ interface conductivity / Sharma, P. (University of Nebraska–Lincoln. Department of Physics and Astronomy) ; Ryu, S. (University of Wisconsin-Madison. Department of Materials Science and Engineering) ; Burton, J.D. (University of Nebraska–Lincoln. Department of Physics and Astronomy) ; Paudel, T.R. (University of Nebraska–Lincoln. Department of Physics and Astronomy) ; Bark, C.W. (University of Wisconsin-Madison. Department of Materials Science and Engineering) ; Huang, Z. (National University of Singapore. Nanoscience and Nanotechnology Institute) ; Ariando, None (National University of Singapore. Nanoscience and Nanotechnology Institute) ; Tsymbal, E.Y. (University of Nebraska–Lincoln. Department of Physics and Astronomy) ; Catalan, Gustau (Institut Català de Nanociència i Nanotecnologia) ; Eom, C.B. (Department of Materials Science and Engineering, University of Wisconsin-Madison) ; Gruverman, A. (University of Nebraska–Lincoln. Department of Physics and Astronomy)
In recent years, complex-oxide heterostructures and their interfaces have become the focus of significant research activity, primarily driven by the discovery of emerging states and functionalities that open up opportunities for the development of new oxide-based nanoelectronic devices. [...]
2015 - 10.1021/acs.nanolett.5b01021
Nano letters, Vol. 15, issue 5 (May 2015) , p. 3547-3551  
4.
8 p, 9.3 MB Position-controlled growth of GaN nanowires and nanotubes on diamond by molecular beam epitaxy / Schuster, Fabian (Walter Schottky Institut, Physics Department, Technische Universität München) ; Hetzl, Martin (Technische Universität München. Walter Schottky Institute) ; Weiszer, Saskia (Technische Universität München. Walter Schottky Institute) ; Garrido, José A. (Technische Universität München. Walter Schottky Institute) ; De La Mata, Maria (Institut de Ciència de Materials de Barcelona (ICMAB-CSIC)) ; Magén, César (Universidad de Zaragoza. Instituto de Nanociencia de Aragón) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Stutzmann, Martin (Technische Universität München. Walter Schottky Institute) ; ALBA Laboratori de Llum de Sincrotró
In this work the position-controlled growth of GaN nanowires (NWs) on diamond by means of molecular beam epitaxy is investigated. In terms of growth, diamond can be seen as a model substrate, providing information of systematic relevance also for other substrates. [...]
2015 - 10.1021/nl504446r
Nano letters, Vol. 15, issue 3 (Nov. 2015) , p. 1773-1779  
5.
10 p, 4.7 MB Phonon engineering in isotopically disordered silicon nanowires / Mukherjee, S. (Polytechnique Montréal. Département de génie physique) ; Givan, U. (Max-Planck-Institut für Mikrostrukturphysik) ; Senz, S. (Max-Planck-Institut für Mikrostrukturphysik) ; Bergeron, A. (Polytechnique Montréal. Département de génie physiquel) ; Francoeur, S. (Polytechnique Montréal. Département de génie physique) ; De La Mata, Maria (Institut Català de Nanociència i Nanotecnologia) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Sekiguchi, T. (Keio University. Department of Applied Physics and Physico-Informatics) ; Itoh, K.M. (Keio University. Department of Applied Physics and Physico-Informatics) ; Isheim, D. (Northwestern University. Department of Materials Science and Engineering) ; Seidman, D.N. (Northwestern University. Department of Materials Science and Engineering) ; Moutanabbir, O. (Polytechnique Montréal. Département de génie physique)
The introduction of stable isotopes in the fabrication of semiconductor nanowires provides an additional degree of freedom to manipulate their basic properties, design an entirely new class of devices, and highlight subtle but important nanoscale and quantum phenomena. [...]
2015 - 10.1021/acs.nanolett.5b00708
Nano letters, Vol. 15, issue 6 (Oct. 2015) , p. 3885-3893  
6.
19 p, 11.4 MB On-Surface Engineering of a Magnetic Organometallic Nanowire / Ormaza, Maider (Université de Strasbourg) ; Robles, Roberto (Institut Català de Nanociència i Nanotecnologia) ; Bachellier, N. (Université de Strasbourg) ; Abufager, Paula (Institut Català de Nanociència i Nanotecnologia) ; Lorente Palacios, Nicolás (Institut Català de Nanociència i Nanotecnologia) ; Limot, Laurent (Université de Strasbourg)
The manipulation of the molecular spin state by atom doping is an attractive strategy to confer desirable magnetic properties to molecules. Here, we present the formation of novel magnetic metallocenes by following this approach. [...]
2016 - 10.1021/acs.nanolett.5b04280
Nano Letters, Vol. 16, Num. 1 (January 2016) , p. 588-593  
7.
15 p, 3.9 MB UV Photosensing Characteristics of Nanowire-Based GaN/AlN Superlattices / Lähnemann, Jonas (University Grenoble Alpes) ; Den Hertog, Martien (Institut Nèel (Grenoble, França)) ; Hille, Pascal (I. Physikalisches Institut. Justus-Liebig-Universitt Gießen) ; Mata Fernández, María de la (Institut Catalá de Nanociència i Nanotecnologia) ; Fournier, Thierry (Institut Nèel (Grenoble, França)) ; Schörmann, Jörg (I. Physikalisches Institut. Justus-Liebig-Universitt Gießen) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Eickhoff, Martin (I. Physikalisches Institut. Justus-Liebig-Universitt Gießen) ; Monroy, Eva (University Grenoble Alpes)
We have characterized the photodetection capabilities of single GaN nanowires incorporating 20 periods of AlN/GaN:Ge axial heterostructures enveloped in an AlN shell. Transmission electron microscopy confirms the absence of an additional GaN shell around the heterostructures. [...]
2016 - 10.1021/acs.nanolett.6b00806
Nano Letters, Vol. 16, Num. 5 (May 2016) , p. 3260-3267  
8.
18 p, 3.2 MB Reversible 2D Phase Transition Driven by an Electric Field : Visualization and Control on the Atomic Scale / Wortmann, B. (University of Duisburg-Essen. Faculty of Physics. Center for Nanointegration Duisburg-Essen (CENIDE)) ; Vörden, D.V. (University of Duisburg-Essen. Faculty of Physics. Center for Nanointegration Duisburg-Essen (CENIDE)) ; Graf, P. (University of Duisburg-Essen. Faculty of Physics. Center for Nanointegration Duisburg-Essen (CENIDE)) ; Robles, Roberto (Institut Català de Nanociència i Nanotecnologia) ; Abufager, Paula (Institut Català de Nanociència i Nanotecnologia) ; Lorente, N. (Institut Català de Nanociència i Nanotecnologia) ; Bobisch, C.A. (University of Duisburg-Essen. Faculty of Physics. Center for Nanointegration Duisburg-Essen (CENIDE)) ; Möller, R. (University of Duisburg-Essen. Faculty of Physics. Center for Nanointegration Duisburg-Essen (CENIDE))
We report on a reversible structural phase transition of a two-dimensional system that can be locally induced by an external electric field. Two different structural configurations may coexist within a CO monolayer on Cu(111). [...]
2016 - 10.1021/acs.nanolett.5b04174
Nano Letters, Vol. 16, Núm. 1 (January 2016) , p. 528-533  
9.
32 p, 3.3 MB Twin-induced InSb nanosails : a convenient high mobility quantum system / Mata Fernández, María de la (Institut Catalá de Nanociència i Nanotecnologia) ; Leturcq, Renaud (Institut d’Electronique, de Microélectronique, et de Nanotechnologie) ; Plissard, Sébastien R. (Centre national de la recherche scientifique. Laboratoire d'analyse et d'architecture des systèmes) ; Rolland, Chloé (Institut d’Electronique, de Microélectronique, et de Nanotechnologie) ; Magén, César (Instituto de Nanociencia de Aragon. Laboratorio de Microscopías Avanzadas) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Caroff, Philippe (Institut d’Electronique, de Microélectronique, et de Nanotechnologie)
Ultra narrow bandgap III-V semiconductor nanomaterials provide a unique platform for realizing advanced nanoelectronics, thermoelectrics, infrared photodetection, and quantum transport physics. In this work we employ molecular beam epitaxy to synthesize novel nanosheet-like InSb nanostructures exhibiting superior electronic performance. [...]
2016 - 10.1021/acs.nanolett.5b05125
Nano letters, Vol. 16, issue 2 (Oct. 2016) , p. 825-833  
10.
19 p, 1.3 MB Spin hall effect and weak antilocalization in graphene/transition metal dichalcogenide heterostructures / Garcia, José H. (Institut Català de Nanociència i Nanotecnologia) ; Cummings, Aron W. (Institut Català de Nanociència i Nanotecnologia) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
We report on a theoretical study of the spin Hall Effect (SHE) and weak antilocalization (WAL) in graphene/transition metal dichalcogenide (TMDC) heterostructures, computed through efficient real-space quantum transport methods, and using realistic tight-binding models parametrized from ab initio calculations. [...]
2017 - 10.1021/acs.nanolett.7b02364
Nano letters, Vol. 17, issue 8 (Sep. 2017) , p. 5078-5083  

Dipòsit Digital de Documents de la UAB : 14 registres trobats   1 - 10següent  anar al registre:
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