UAB Digital Repository of Documents 40 records found  1 - 10nextend  jump to record: Search took 0.01 seconds. 
1.
30 p, 3.1 MB Semiconductor-ferromagnetic insulator-superconductor nanowires : stray field and exchange field / Liu, Yu (University of Copenhagen. Center for Quantum Devices) ; Vaitiekėnas, Saulius (University of Copenhagen. Niels Bohr Institute) ; Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia) ; Koch, Christian (Institut Català de Nanociència i Nanotecnologia) ; Hart, Sean (Stanford University. Department of Physics) ; Cui, Zheng (Stanford University. Department of Applied Physics) ; Kanne, Thomas (University of Copenhagen. Niels Bohr Institute) ; Khan, Sabbir A. (University of Copenhagen. Niels Bohr Institute) ; Tanta, Rawa (University of Copenhagen. Niels Bohr Institute) ; Upadhyay, Shivendra (University of Copenhagen. Niels Bohr Institute) ; Cachaza, Martin Espiñeira (University of Copenhagen. Niels Bohr Institute) ; Marcus, Charles M. (University of Copenhagen. Niels Bohr Institute) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Moler, Kathryn A. (Stanford University. Department of Applied Physics) ; Krogstrup, Peter (University of Copenhagen. Niels Bohr Institute)
Nanowires can serve as flexible substrates for hybrid epitaxial growth on selected facets, allowing for the design of heterostructures with complex material combinations and geometries. In this work we report on hybrid epitaxy of freestanding vapor-liquid-solid grown and in-plane selective area grown semiconductor-ferromagnetic insulator-superconductor (InAs/EuS/Al) nanowire heterostructures. [...]
2020 - 10.1021/acs.nanolett.9b04187
Nano letters, Vol. 20, issue 1 (Jan. 2020) , p. 456-462  
2.
28 p, 1.7 MB Switchless multiplexing of graphene active sensor arrays for brain mapping / Garcia Cortadella, Ramon (Institut Català de Nanociència i Nanotecnologia) ; Schaefer, Nathan (Institut Català de Nanociència i Nanotecnologia) ; Cisneros-Fernandez, José (Instituto de Microelectrónica de Barcelona) ; Ré, Lucia (Instituto de Microelectrónica de Barcelona) ; Illa, Xavi (Instituto de Microelectrónica de Barcelona) ; Schwesig, Gerrit (Ludwig-Maximilians Universität München. Faculty of Medicine) ; Moya Lara, Ana (Instituto de Microelectrónica de Barcelona) ; Santiago, Sara (Universitat Autònoma de Barcelona. Departament de Química) ; Guirado López, Gonzalo (Universitat Autònoma de Barcelona. Departament de Química) ; Villa, Rosa (Instituto de Microelectrónica de Barcelona) ; Sirota, Anton (Ludwig-Maximilians Universität München. Faculty of Medicine) ; Serra Graells, Francesc (Instituto de Microelectrónica de Barcelona) ; Garrido, Jose (Institut Català de Nanociència i Nanotecnologia) ; Guimerà, Anton (Institut de Microelectrònica de Barcelona)
Sensor arrays used to detect electrophysiological signals from the brain are paramount in neuroscience. However, the number of sensors that can be interfaced with macroscopic data acquisition systems currently limits their bandwidth. [...]
2020 - 10.1021/acs.nanolett.0c00467
Nano letters, Vol. 20, issue 5 (May 2020) , p. 3528-3537  
3.
10 p, 3.9 MB Universal Spin Diffusion Length in Polycrystalline Graphene / Cummings, Aron (Institut Català de Nanociència i Nanotecnologia) ; Dubois, Simon M.M. (Université Catholique de Louvain) ; Charlier, Jean Christophe (Université Catholique de Louvain) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
Graphene grown by chemical vapor deposition (CVD) is the most promising material for industrial-scale applications based on graphene monolayers. It also holds promise for spintronics; despite being polycrystalline, spin transport in CVD graphene has been measured over lengths up to 30 μm, which is on par with the best measurements made in single-crystal graphene. [...]
2019 - 10.1021/acs.nanolett.9b03112
Nano letters, Vol. 19, Issue 10 (October 2019) , p. 7418-7426  
4.
10 p, 3.5 MB Phonon Engineering in Twinning Superlattice Nanowires / De Luca, Marta (Universität Basel. Departement Physik) ; Fasolato, Claudia (Università degli Studi di Perugia. Dipartimento di Fisica e Geologia) ; Verheijen, Marcel A. (Eindhoven University of Technology. Departament of Applied Physics) ; Ren, Yizhen (Eindhoven University of Technology. Departament of Applied Physics) ; Swinkels, Milo Y. (Universität Basel. Departement Physik) ; Kölling, Sebastian (Eindhoven University of Technology. Departament of Applied Physics) ; Bakkers, Erik P. A. M. (Eindhoven University of Technology. Departament of Applied Physics) ; Rurali, Riccardo (Institut de Ciència de Materials de Barcelona) ; Cartoixà, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Zardo, Ilaria (Universität Basel. Departement Physik)
One of the current challenges in nanoscience is tailoring the phononic properties of a material. This has long been a rather elusive task because several phonons have wavelengths in the nanometer range. [...]
2019 - 10.1021/acs.nanolett.9b01775
Nano letters, Vol. 19, Num. 7 (July 2019) , p. 4702-4711  
5.
7 p, 6.2 MB Ballistic Phonons in Ultrathin Nanowires / Vakulov, Daniel (Eindhoven University of Technology) ; Gireesan, Subash (Center for Computational Energy Research) ; Swinkels, Milo Y. (University of Basel) ; Chavez, Ruben (Eindhoven University of Technology) ; Vogelaar, Tom (Eindhoven University of Technology) ; Torres, Pol (Universitat Autònoma de Barcelona. Departament de Física) ; Campo, Alessio (University of Basel) ; De Luca, Marta (University of Basel) ; Verheijen, Marcel A. (Eindhoven University of Technology) ; Koelling, Sebastian (Eindhoven University of Technology) ; Gagliano, Luca (Eindhoven University of Technology) ; Haverkort, Jos E. M. (Eindhoven University of Technology) ; Alvarez, F. Xavier (Universitat Autònoma de Barcelona) ; Bobbert, Peter A. (Center for Computational Energy Research) ; Zardo, Ilaria (University of Basel) ; Bakkers, Erik P. A. M. (Eindhoven University of Technology)
According to Fourier's law, a temperature difference across a material results in a linear temperature profile and a thermal conductance that decreases inversely proportional to the system length. These are the hallmarks of diffusive heat flow. [...]
2020 - 10.1021/acs.nanolett.0c00320
Nano letters, Vol. 20, Num. 4 (April 2020) , p. 2703-2709  
6.
9 p, 9.5 MB Elastic Properties of Few Nanometers Thick Polycrystalline MoS2 Membranes : A Nondestructive Study / Graczykowski, Bartlomiej (Max Planck Institute for Polymer Research) ; Sledzinska, Marianna (Institut Català de Nanociència i Nanotecnologia) ; Placidi, Marcel (Institut de Recerca en Energia de Catalunya) ; Saleta Reig, David (Institut Català de Nanociència i Nanotecnologia) ; Kasprzak, M. (Adam Mickiewicz University in Poznan) ; Alzina, Francesc (Institut Català de Nanociència i Nanotecnologia) ; Sotomayor Torres, Clivia M. (Institut Català de Nanociència i Nanotecnologia)
The performance gain-oriented nanostructurization has opened a new pathway for tuning mechanical features of solid matter vital for application and maintained performance. Simultaneously, the mechanical evaluation has been pushed down to dimensions way below 1 μm. [...]
2017 - 10.1021/acs.nanolett.7b03669
Nano letters, Vol. 17, Issue 12 (December 2017) , p. 7647-7651  
7.
21 p, 2.0 MB Field Effect in Graphene-Based van der Waals Heterostructures : Stacking Sequence Matters / Stradi, Daniele (QuantumWise A/S) ; Papior, Nick (Institut Català de Nanociència i Nanotecnologia) ; Hansen, O. (Technical University of Denmark. Department of Micro- and Nanotechnology) ; Brandbyge, Mads (Technical University of Denmark. Department of Micro- and Nanotechnology)
Stacked van der Waals (vdW) heterostructures where semiconducting two-dimensional (2D) materials are contacted by overlaid graphene electrodes enable atomically thin, flexible electronics. We use first-principles quantum transport simulations of graphene-contacted MoS devices to show how the transistor effect critically depends on the stacking configuration relative to the gate electrode. [...]
2017 - 10.1021/acs.nanolett.7b00473
Nano letters, Vol. 17, Issue 4 (April 2017) , p. 2660-2666  
8.
8 p, 2.9 MB Kinetic Ionic Permeation and Interfacial Doping of Supported Graphene / Jia, Xiaoyu (University of Mainz) ; Hu, Min (University of Science and Technology of China) ; Soundarapandian, Karuppasamy (ICFO-Institut de Ciències Fotòniques) ; Yu, Xiaoqing (Max Planck Institute for Polymer Research) ; Liu, Zhaoyang (Max Planck Institute for Polymer Research) ; Chen, Zongping (Max Planck Institute for Polymer Research) ; Narita, Akimitsu (Max Planck Institute for Polymer Research) ; Müllen, Klaus (Max Planck Institute for Polymer Research) ; Koppens, Frank H.L. (ICFO-Institut de Ciències Fotòniques) ; Jiang, Jun (University of Science and Technology of China) ; Tielrooij, Klaas-Jan (Institut Català de Nanociència i Nanotecnologia) ; Bonn, Mischa (Max Planck Institute for Polymer Research) ; Wang, Hai I. (Max Planck Institute for Polymer Research)
Due to its outstanding electrical properties and chemical stability, graphene finds widespread use in various electrochemical applications. Although the presence of electrolytes strongly affects its electrical conductivity, the underlying mechanism has remained elusive. [...]
2019 - 10.1021/acs.nanolett.9b04053
Nano letters, Vol. 19, Issue 12 (December 2019) , p. 9029-9036  
9.
12 p, 1.6 MB Spin Proximity Effects in Graphene/Topological Insulator Heterostructures / Song, Kenan (Institut Català de Nanociència i Nanotecnologia) ; Soriano, David (QuantaLab and International Iberian Nanotechnology Laboratory) ; Cummings, Aron (Institut Català de Nanociència i Nanotecnologia) ; Robles, Roberto (Institut Català de Nanociència i Nanotecnologia) ; Ordejon, Pablo (Institut Català de Nanociència i Nanotecnologia) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
Enhancing the spin-orbit interaction in graphene, via proximity effects with topological insulators, could create a novel 2D system that combines nontrivial spin textures with high electron mobility. [...]
2018 - 10.1021/acs.nanolett.7b05482
Nano letters, Vol. 18, Issue 3 (March 2018) , p. 2033-2039  
10.
45 p, 1.3 MB Ballistic InSb Nanowires and Networks via Metal-Sown Selective Area Growth / Aseev, Pavel (Microsoft Quantum Lab Delft) ; Wang, Guanzhong (Delft University of Technology) ; Binci, Luca (Delft University of Technology) ; Singh, Amrita (Delft University of Technology) ; Martí-Sánchez, Sara (Institut Català de Nanociència i Nanotecnologia) ; Botifoll, Marc (Institut Català de Nanociència i Nanotecnologia) ; Stek, Lieuwe J. (Delft University of Technology) ; Bordin, Alberto (Delft University of Technology) ; Watson, John D. (Microsoft Quantum Lab Delft) ; Boekhout, Frenk (QuTech and Netherlands Organization for Applied Scientific Research) ; Abel, Daniel (Microsoft Quantum Lab Delft) ; Gamble, John (Microsoft Quantum) ; Van Hoogdalem, Kevin (Microsoft Quantum Lab Delft) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ; Kouwenhoven, Leo P. (Delft University of Technology) ; De Lange, Gijs (Microsoft Quantum Lab Delft) ; Caroff, Philippe (Microsoft Quantum Lab Delft)
Selective area growth is a promising technique to realize semiconductor-superconductor hybrid nanowire networks, potentially hosting topologically protected Majorana-based qubits. In some cases, however, such as the molecular beam epitaxy of InSb on InP or GaAs substrates, nucleation and selective growth conditions do not necessarily overlap. [...]
2019 - 10.1021/acs.nanolett.9b04265
Nano letters, Vol. 19, Issue 12 (December 2019) , p. 9102-9111  

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