Dipòsit Digital de Documents de la UAB 7 registres trobats  La cerca s'ha fet en 0.01 segons. 
1.
6 p, 1.1 MB Analysis on the filament structure evolution in reset transition of Cu/HfO₂/Pt RRAM device / Zhang, Meiyun (Institute of Microelectronics of Chinese Academy of Sciences (Beijing)) ; Long, Shibing (Institute of Microelectronics of Chinese Academy of Sciences (Beijing)) ; Li, Yang (Institute of Microelectronics of Chinese Academy of Sciences (Beijing)) ; Liu, Qi (Institute of Microelectronics of Chinese Academy of Sciences (Beijing)) ; Lv, Hangbing (Institute of Microelectronics of Chinese Academy of Sciences (Beijing)) ; Miranda, Enrique Alberto (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Liu, Ming (Institute of Microelectronics of Chinese Academy of Sciences (Beijing))
The resistive switching (RS) process of resistive random access memory (RRAM) is dynamically correlated with the evolution process of conductive path or conductive filament (CF) during its breakdown (rupture) and recovery (reformation). [...]
2016 - 10.1186/s11671-016-1484-8
Nanoscale Research Letters, Vol. 11 (May 2016) , art. 269  
2.
30 p, 3.6 MB Conductance quantization in resistive random access memory / Li, Yang (Chinese Academy of Sciences. Institute of Microelectronics (Beijing)) ; Long, Shibing (Chinese Academy of Sciences. Institute of Microelectronics (Beijing)) ; Liu, Yang (University of Science and Technology Beijing. Department of Materials Physics and Chemistry) ; Hu, Chen (University of Science and Technology Beijing. Department of Materials Physics and Chemistry) ; Teng, Jiao (University of Science and Technology Beijing. Department of Materials Physics and Chemistry) ; Liu, Qi (Chinese Academy of Sciences. Institute of Microelectronics (Beijing)) ; Lv, Hangbing (Chinese Academy of Sciences. Institute of Microelectronics (Beijing)) ; Suñé, Jordi (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Liu, Ming (Chinese Academy of Sciences. Institute of Microelectronics (Beijing))
The intrinsic scaling-down ability, simple metal-insulator-metal (MIM) sandwich structure, excellent performances, and complementary metal-oxide-semiconductor (CMOS) technology-compatible fabrication processes make resistive random access memory (RRAM) one of the most promising candidates for the next-generation memory. [...]
2015 - 10.1186/s11671-015-1118-6
Nanoscale Research Letters, Vol. 10 (December 2015) , art. 420  
3.
4 p, 915.1 KB Morphological changes of gel-type functional polymers after intermatrix synthesis of polymer stabilized silver nanoparticles / Bastos Arrieta, Julio (Universitat Autònoma de Barcelona. Departament de Química) ; Muñoz Tapia, María (Universitat Autònoma de Barcelona. Departament de Química) ; Ruiz, Patricia (Universitat Autònoma de Barcelona. Departament de Química) ; Muraviev, Dmitri, 1948- (Universitat Autònoma de Barcelona. Departament de Química)
This paper reports the results of intermatrix synthesis (IMS) of silver metal nanoparticles (Ag-MNPs) in Purolite C100E sulfonic ion exchange polymer of the gel-type structure. It has been shown that the surface morphology of the initial MNP-free polymer is absolutely smooth, but it dramatically changes after the kinetic loading of Ag on the polymer and then IMS of Ag-MNPs. [...]
2013 - 10.1186/1556-276X-8-255
Nanoscale research letters, Vol. 8 (May 2013) , art. 255  
4.
6 p, 839.0 KB Copper@polypyrrole nanocables / Suárez Guevara, Jullieth Gabriela (Institut Català de Nanociència i Nanotecnologia) ; Ayyad, Omar (Institut Català de Nanociència i Nanotecnologia) ; Gómez-Romero, Pedro (MATGAS)
A simple hydrothermal redox reaction between microcrystalline CuOHCl and pyrrole leads to the isolation of striking nanostructures formed by polypyrrole-coated copper nanocables. These multicomponent cables that feature single-crystalline face-centered cubic Cu cores (ca. [...]
2012 - 10.1186/1556-276X-7-521
Nanoscale Research Letters, Vol. 7 (Dec. 2012) , art. 521  
5.
7 p, 4.4 MB NH₃ molecular doping of silicon nanowires grown along the [112], [110], [001], and [111] orientations / Miranda, Álvaro (Universitat Autònoma de Barcelona. Institut de Ciència de Materials de Barcelona) ; Cartoixà Soler, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Canadell Casanova, Enric (Universitat Autònoma de Barcelona. Institut de Ciència de Materials de Barcelona) ; Rurali, Riccardo (Universitat Autònoma de Barcelona. Institut de Ciència de Materials de Barcelona)
The possibility that an adsorbed molecule could provide shallow electronic states that could be thermally excited has received less attention than substitutional impurities and could potentially have a high impact in the doping of silicon nanowires (SiNWs). [...]
2012 - 10.1186/1556-276X-7-308
Nanoscale Research Letters, Vol. 7 (June 2012) , art. 308  
6.
6 p, 667.1 KB Intermatrix synthesis : easy technique permitting preparation of polymer-stabilized nanoparticles with desired composition and structure / Ruiz, Patricia (Universitat Autònoma de Barcelona. Departament de Química) ; Macanás de Benito, Jorge (Universitat Politécnica de Catalunya) ; Muñoz Tapia, María (Universitat Autònoma de Barcelona. Departament de Química) ; Muraviev, Dmitri, 1948- (Universitat Autònoma de Barcelona. Departament de Química)
The synthesis of polymer-stabilized nanoparticles (PSNPs) can be successfully carried out using intermatrix synthesis (IMS) technique, which consists in sequential loading of the functional groups of a polymer with the desired metal ions followed by nanoparticles (NPs) formation stage. [...]
2011 - 10.1186/1556-276X-6-343
Nanoscale research letters, Vol. 6 (April 2011) , art. 343  
7.
9 p, 644.4 KB Polycrystallization effects on the nanoscale electrical properties of high-k dielectrics / Lanza Martínez, Mario (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Iglesias Santiso, Vanessa (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Porti i Pujal, Marc (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Aymerich Humet, Xavier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
In this study, atomic force microscopy-related techniques have been used to investigate, at the nanoscale, how the polycrystallization of an Al₂O₃-based gate stack, after a thermal annealing process, affects the variability of its electrical properties. [...]
2011 - 10.1186/1556-276X-6-108
Nanoscale Research Letters, Vol. 6 (January 2011) , art. 108  

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