UAB Digital Repository of Documents 22 records found  1 - 10nextend  jump to record: Search took 0.00 seconds. 
1.
12 p, 593.5 KB Piezoelectric monolayers as nonlinear energy harvesters / López Suárez, Miquel (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Pruneda, Miguel (Institut Català de Nanociència i Nanotecnologia) ; Abadal, Gabriel (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Rurali, Riccardo (Institut de Ciència de Materials de Barcelona)
We study the dynamics of h-BN monolayers by first performing ab-initio calculations of the deformation potential energy and then solving numerically a Langevine-type equation to explore their use in nonlinear vibration energy harvesting devices. [...]
2014 - 10.1088/0957-4484/25/17/175401
Nanotechnology, Vol. 25, issue 17 (May 2014) , art. 175401  
2.
4 p, 239.4 KB On the Enhancement of the Thermal Conductivity of Graphene-Based Nanofluids / Rodríguez Laguna, María del Rocío (Institut Català de Nanociència i Nanotecnologia) ; Sotomayor Torres, Clivia M. (Institut Català de Nanociència i Nanotecnologia) ; Gómez Romero, Pedro 1959- (Institut Català de Nanociència i Nanotecnologia) ; Chávez Ángel, Emigdio (Institut Català de Nanociència i Nanotecnologia)
Heat transfer fluids have been extensively used in both low-temperature and high temperature applications (e. g. microelectronics cooling and concentrated solar power). However, their low thermal conductivity is still a limit on performance. [...]
Cork : IEEE, 2018 (Proceedings of the IEEE Conference on Nanotechnology) - 10.1109/NANO.2018.8626244
IEEE 18th International Conference on Nanotechnology (IEEE-NANO), 2018, p. 8626244  
3.
45 p, 3.1 MB Understanding semiconductor nanostructures via advanced electron microscopy and spectroscopy / Zamani, Reza (Chalmers tekniska högskola. Institutionen för fysik) ; Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia)
Transmission electron microscopy (TEM) offers an ample range of complementary techniques which are able to provide essential information about the physical, chemical and structural properties of materials at the atomic scale, and hence makes a vast impact on our understanding of materials science, especially in the field of semiconductor one-dimensional (1D) nanostructures. [...]
2019 - 10.1088/1361-6528/ab0b0a
Nanotechnology, Vol. 30, issue 26 (Oct. 2019) , art. 262001  
4.
23 p, 1.1 MB Order quantification of hexagonal periodic arrays fabricated by in situ solvent-assisted nanoimprint lithography of block copolymers / Delgado Simao, Claudia (Institut Català de Nanociència i Nanotecnologia) ; Khunsin, Worawut (Institut Català de Nanociència i Nanotecnologia) ; Kehagias, Nikolaos (Institut Català de Nanociència i Nanotecnologia) ; Salaun, Mathieu (Centre national de la recherche scientifique. Laboratoire des Technologies de la Microélectronique) ; Zelsmann, Marc (Centre national de la recherche scientifique. Laboratoire des Technologies de la Microélectronique) ; Morris, Michael A. (Tyndall National Institute. School of Chemistry) ; Sotomayor Torres, Clivia M. (Institut Català de Nanociència i Nanotecnologia)
Directed self-assembly of block copolymer polystyrene-b-polyethylene oxide (PS-b-PEO) thin film was achieved by a one-pot methodology of solvent vapor assisted nanoimprint lithography (SAIL). Simultaneous solvent-anneal and imprinting of a PS-b-PEO thin film on silicon without surface pre-treatments yielded a 250 nm line grating decorated with 20 nm diameter nanodots array over a large surface area of up to 4' wafer scale. [...]
2014 - 10.1088/0957-4484/25/17/175703
Nanotechnology, Vol. 25, Issue 17 (May 2014) , art. 175703  
5.
7 p, 743.4 KB SiNWs-based electrochemical double layer micro-supercapacitors with wide voltage window (4V) and long cycling stability using a protic ionic liquid electrolyte / Aradilla, David (Université Grenoble Alpes) ; Gentile, Pascal (Université Grenoble Alpes) ; Ruiz, Vanesa (Institut Català de Nanociència i Nanotecnologia) ; Gómez Romero, Pedro 1959- (Institut Català de Nanociència i Nanotecnologia) ; Wimberg, Jan (IOLITEC Ionic Liquids Technologies GmbH) ; Iliev, Boyan (IOLITEC Ionic Liquids Technologies GmbH) ; Schubert, Thomas J.S. (IOLITEC Ionic Liquids Technologies GmbH) ; Sadki, Saïd (Université Grenoble Alpes) ; Bidan, Gérard (INAC)
The present work reports the use and application of a novel protic ionic liquid (triethylammonium bis(tri fluoromethylsulfonyl)imide; NEtH TFSI) as an electrolyte for symmetric planar micro-supercapacitors based on silicon nanowire electrodes. [...]
2015 - 10.1088/2043-6262/6/1/015004
Advances in Natural Sciences: Nanoscience and Nanotechnology, Vol. 6, Núm. 1 (March 2015) , art. 15004  
6.
12 p, 755.5 KB Spin transport in dangling-bond wires on doped H-passivated Si(100) / Kepenekian, Mikaël (Institut Català de Nanociència i Nanotecnologia) ; Robles, Roberto (Institut Català de Nanociència i Nanotecnologia) ; Rurali, Riccardo (Institut de Ciència de Materials de Barcelona) ; Lorente, Nicolás (Institut Català de Nanociència i Nanotecnologia)
New advances in single-atom manipulation are leading to the creation of atomic structures on H-passivated Si surfaces with functionalities important for the development of atomic and molecular based technologies. [...]
2014 - 10.1088/0957-4484/25/46/465703
Nanotechnology, Vol. 25, Issue 46 (November 2014) , art. 465703  
7.
21 p, 746.1 KB Nanoscale conductive pattern of the homoepitaxial AlGaN/GaN transistor / Pérez Tomàs, Amador (Institut Català de Nanociència i Nanotecnologia) ; Catalan, Gustau (Institut Català de Nanociència i Nanotecnologia) ; Fontserè Recuenco, Abel (ALBA Laboratori de Llum de Sincrotró) ; Iglesias Santiso, Vanessa (Universitat Autònoma de Barcelona. Escola Tècnica Superior d'Enginyeria) ; Chen, H. (University of Warwick. School of Engineering) ; Gammon, P.M. (University of Warwick. School of Engineering) ; Jennings, M.R. (University of Warwick. School of Engineering) ; Thomas, M. (University of Warwick. School of Engineering) ; Fisher, C.A. (University of Warwick. School of Engineering) ; Sharma, Y.K. (University of Warwick. School of Engineering) ; Placidi, Marcel (Institut de Recerca en Energia de Catalunya) ; Chmielowska, M. (Centre national de la recherche scientifique. Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications) ; Chenot, S. (Centre national de la recherche scientifique. Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications) ; Porti i Pujal, Marc (Universitat Autònoma de Barcelona. Escola Tècnica Superior d'Enginyeria) ; Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Escola Tècnica Superior d'Enginyeria) ; Cordier, Y. (Centre national de la recherche scientifique. Centre de Recherche sur l'Hétéro-Epitaxie et ses Applications)
The gallium nitride (GaN)-based buffer/barrier mode of growth and morphology, the transistor electrical response (25-310°C) and the nanoscale pattern of a homoepitaxial AlGaN/GaN high electron mobility transistor (HEMT) have been investigated at the micro and nanoscale. [...]
2015 - 10.1088/0957-4484/26/11/115203
Nanotechnology, Vol. 26, Issue 11 (March 2015) , art. 115203  
8.
9 p, 1.3 MB Thermal conductivity in disordered porous nanomembranes / Sledzinska, Marianna (Institut Català de Nanociència i Nanotecnologia) ; Graczykowski, Bartlomiej (Max Planck Institute for Polymer Research) ; Alzina, Francesc (Institut Català de Nanociència i Nanotecnologia) ; Melia, Umberto (Universitat Politècnica de Catalunya. Departament d'Enginyeria de Sistemes, Automàtica i Informàtica Industrial) ; Termentzidis, Konstantinos (Université Claude Bernard Lyon 1. Centre national de la recherche scientifique) ; Lacroix, David (Université de Lorraine. Centre national de la recherche scientifique) ; Sotomayor Torres, Clivia M. (Institut Català de Nanociència i Nanotecnologia)
In this work we study the effects of disorder on the thermal conductivity of porous 100 nm thick silicon membranes, in which the size, shape and position of the pores were varied randomly. Measurements using two-laser Raman thermometry on both non-patterned and porous membranes revealed more than a 10-fold reduction of the thermal conductivity compared to that of bulk silicon and a six-fold reduction compared to non-patterned membranes for the sample with random pore shapes. [...]
2019 - 10.1088/1361-6528/ab0ecd
Nanotechnology, Vol. 30, Num. 26 (June 2019) , art. 265401  
9.
15 p, 1.6 MB Thermoelectric spin voltage in graphene / Sierra, Juan F. (Institut Català de Nanociència i Nanotecnologia) ; Neumann, Ingmar (Institut Català de Nanociència i Nanotecnologia) ; Cuppens, Jo (Institut Català de Nanociència i Nanotecnologia) ; Raes, Bart (Institut Català de Nanociència i Nanotecnologia) ; Costache, Marius V. (Institut Català de Nanociència i Nanotecnologia) ; Valenzuela, Sergio O. (Institut Català de Nanociència i Nanotecnologia)
In recent years, new spin-dependent thermal effects have been discovered in ferromagnets, stimulating a growing interest in spin caloritronics, a field that exploits the interaction between spin and heat currents . [...]
2018 - 10.1038/s41565-017-0015-9
Nature Nanotechnology, Vol. 13, Issue 2 (February 2018) , p. 107-111  
10.
19 p, 8.9 MB Uniformly coated highly porous graphene/MnO2 foams for flexible asymmetric supercapacitors / Drieschner, Simon (Technische Universität München) ; Seckendorff, Maximilian Von (Technische Universität München) ; Del Corro García, Elena (Institut Català de Nanociència i Nanotecnologia) ; Wohlketzetter, Jörg (Technische Universität München) ; Blaschke, Benno M. (Technische Universität München) ; Stutzmann, Martin (Technische Universität München) ; Garrido Ariza, José A. (Institut Català de Nanociència i Nanotecnologia)
Supercapacitors are called to play a prominent role in the newly emerging markets of electric vehicles, flexible displays and sensors, and wearable electronics. In order to compete with current battery technology, supercapacitors have to be designed with highly conductive current collectors exhibiting high surface area per unit volume and uniformly coated with pseudocapacitive materials, which is crucial to boost the energy density while maintaining a high power density. [...]
2018 - 10.1088/1361-6528/aab4c2
Nanotechnology, Vol. 29, Núm. 22 (April 2018) , art. 225402  

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