Dipòsit Digital de Documents de la UAB 36 registres trobats  1 - 10següentfinal  anar al registre: La cerca s'ha fet en 0.01 segons. 
1.
6 p, 1.2 MB Unequivocal signatures of the crossover to Anderson localization in realistic models of disordered quasi-one-dimensional materials / López Bezanilla, Alejandro (Los Alamos National Laboratory) ; Froufe Pérez, Luis S. (University of Fribourg. Department of Physics) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia) ; Sáenz, Juan José (IKERBASQUE)
The only unequivocal known criterion for single-parameter scaling Anderson localization relies on the knowledge of the full conductance statistics. To date, theoretical studies have been restricted to model systems with symmetric scatterers, hence lacking universality. [...]
2018 - 10.1103/PhysRevB.98.235423
Physical review B, Vol. 98, Issue 23 (December 2018) , art. 235423  
2.
8 p, 1.1 MB Shubnikov-de Haas oscillations in the anomalous Hall conductivity of Chern insulators / Canonico, Luis M. (Universidade Federal Fluminense) ; Garcia, José H. (Institut Català de Nanociència i Nanotecnologia) ; Rappoport, Tatiana G. (Universidade Federal Do Rio de Janeiro) ; Ferreira, Aires (York University. Department of Physics) ; Muniz, R. B. (Universidade Federal Fluminense)
The Haldane model on a honeycomb lattice is a paradigmatic example of a system featuring quantized Hall conductivity in the absence of an external magnetic field, that is, a quantum anomalous Hall effect. [...]
2018 - 10.1103/PhysRevB.98.085409
Physical review B, Vol. 98, Issue 8 (August 2018) , art. 85409  
3.
7 p, 2.8 MB Proximity-induced spin-orbit coupling in graphene/ Bi1.5Sb0.5Te1.7Se1.3 heterostructures / Jafarpisheh, S. (Peter Grünberg Institute) ; Cummings, Aron W. (Institut Català de Nanociència i Nanotecnologia) ; Watanabe, Kenji (National Institute for Material Science (Tsukuba, Japan)) ; Taniguchi, Takashi (National Institute for Material Science (Tsukuba, Japan)) ; Beschoten, Bernd (RWTH Aachen University) ; Stampfer, Cristoph (RWTH Aachen University)
The weak intrinsic spin-orbit coupling in graphene can be greatly enhanced by proximity coupling. Here, we report on the proximity-induced spin-orbit coupling in graphene transferred by hexagonal boron nitride (hBN) onto the topological insulator Bi1. [...]
2018 - 10.1103/PhysRevB.98.241402
Physical review B, Vol. 98, Issue 24 (December 2018) , art. 241402  
4.
16 p, 13.4 MB Polarization dependence of angle-resolved photoemission with submicron spatial resolution reveals emerging one-dimensionality of electrons in NbSe3 / Valbuena, Miguel Ángel (Institut Català de Nanociència i Nanotecnologia) ; Chudzinski, P. (Institute for Theoretical Physics) ; Pons, S. (École Polytechnique Fédérale de Lausanne) ; Conejeros, S. (Universidad Católica Del Norte. Departamento de Química) ; Alemany, P. (Universitat de Barcelona. Departament de Ciència de Materials i Química Física) ; Canadell Casanova, Enric (Institut de Ciència de Materials de Barcelona) ; Berger, H. (École Polytechnique Fédérale de Lausanne) ; Frantzeskakis, E. (Synchrotron SOLEIL) ; Avila, J. (Synchrotron SOLEIL) ; Asensio, M.C. (Synchrotron SOLEIL) ; Giamarchi, T. (University of Geneva. Department of Quantum Matter Physics) ; Grioni, M. (École Polytechnique Fédérale de Lausanne)
In materials with nearly commensurate band filling the electron liquid may spontaneously separate into components with distinct properties, yielding complex intra-and interunit cell ordering patterns and a reduced dimensionality. [...]
2019 - 10.1103/PhysRevB.99.075118
Physical review B, Vol. 99, Issue 7 (February 2019) , art. 75118  
5.
7 p, 3.9 MB Tunable circular dichroism and valley polarization in the modified Haldane model / Vila Tusell, Marc (Universitat Autònoma de Barcelona. Departament de Física) ; Hung, Nguyen Tuan (Tohoku University (Japó). Department of Physics) ; Roche, Stephan (Institut Català de Nanociència i Nanotecnologia) ; Saito, Riichiro (Tohoku University (Japó). Department of Physics)
We study the polarization dependence of optical absorption for a modified Haldane model, which exhibits antichiral edge modes in the presence of sample boundaries and has been argued to be realizable in transition metal dichalcogenides or Weyl semimetals. [...]
2019 - 10.1103/PhysRevB.99.161404
Physical review B, Vol. 99, issue 16 (April 2019) , art. 161404  
6.
18 p, 4.7 MB Quasiparticle spectra of 2H-NbSe2 : two-band superconductivity and the role of tunneling selectivity / Noat, Y. (Institut des Nanosciences de Paris) ; Silva Guillén, José Ángel (Institut Català de Nanociència i Nanotecnologia) ; Cren, T. (Institut des Nanosciences de Paris) ; Cherkez, V. (Institut des Nanosciences de Paris) ; Brun, C. (Institut des Nanosciences de Paris) ; Pons, S. (Institut des Nanosciences de Paris) ; Debontridder, F. (Institut des Nanosciences de Paris) ; Roditchev, D. (Institut des Nanosciences de Paris) ; Sacks, W. (Université Paris 6) ; Cario, L. (Institut des Matériaux Jean Rouxel) ; Ordejón Rontomé, Pablo (Institut Català de Nanociència i Nanotecnologia) ; García, Alberto (Institut de Ciència de Materials de Barcelona) ; Canadell Casanova, Enric (Institut de Ciència de Materials de Barcelona)
We have studied the superconducting state of 2H-NbSe2 by scanning tunneling spectroscopy along two different crystal orientations, the c and the a/b axes. Along the c axis a large gap is dominant in the spectra, while a smaller gap is measured along the a/b axis. [...]
2015 - 10.1103/PhysRevB.92.134510
Physical review B, Vol. 92, Issue 13 (October 2015) , art. 134510  
7.
8 p, 1.5 MB Tunneling and electronic structure of the two-gap superconductor MgB2 / Silva Guillén, José Ángel (Institut Català de Nanociència i Nanotecnologia) ; Noat, Y. (Institut des Nanosciences de Paris) ; Cren, T. (Institut des Nanosciences de Paris) ; Sacks, W. (Institut des Nanosciences de Paris) ; Canadell Casanova, Enric (Institut de Ciència de Materials de Barcelona) ; Ordejón Rontomé, Pablo (Institut Català de Nanociència i Nanotecnologia)
A combined experimental (superconductor-insulator-superconductor tunneling spectra) and theoretical (density functional theory) study of the two-gap superconductor MgB2 is reported. The calculations confirm that the small gap is associated with a π band mostly based on the boron pz orbitals leading to the three-dimensional band component of the Fermi surface. [...]
2015 - 10.1103/PhysRevB.92.064514
Physical review B, Vol. 92, Issue 6 (August 2015) , art. 64514  
8.
14 p, 5.9 MB Hybrid quantum anomalous Hall effect at graphene-oxide interfaces / Zanolli, Zeila (Institut Català de Nanociència i Nanotecnologia) ; Niu, C. (Peter Grünberg Institut) ; Bihlmayer, G. (Peter Grünberg Institut) ; Mokrousov, Y. (Johannes Gutenberg University Mainz) ; Mavropoulos, P. (Peter Grünberg Institut) ; Verstraete, Matthieu J. (Université de Liège) ; Blügel, S. (Peter Grünberg Institut)
Interfaces are ubiquitous in materials science, and in devices in particular. As device dimensions are constantly shrinking, understanding the physical properties emerging at interfaces is crucial to exploit them for applications, here for spintronics. [...]
2018 - 10.1103/PhysRevB.98.155404
Physical review B, Vol. 98, Issue 15 (October 2018) , art. 155404  
9.
34 p, 4.0 MB Gate electrostatics and quantum capacitance in ballistic graphene devices / Caridad, José M. (Danmarks Tekniske Universitet. Center for Nanostructured Graphene) ; Power, Stephen R. (Institut Català de Nanociència i Nanotecnologia) ; Shylau, Artsem A. (Danmarks Tekniske Universitet. Center for Nanostructured Graphene) ; Gammelgaard, Lene (Danmarks Tekniske Universitet. Center for Nanostructured Graphene) ; Jauho, Antti-Pekka (Danmarks Tekniske Universitet. Center for Nanostructured Graphene) ; Bøggild, Peter (Danmarks Tekniske Universitet. Center for Nanostructured Graphene)
We experimentally investigate the charge induction mechanism across gated, narrow, ballistic graphene devices with different degrees of edge disorder. By using magnetoconductance measurements as the probing technique, we demonstrate that devices with large edge disorder exhibit a nearly homogeneous capacitance profile across the device channel, close to the case of an infinitely large graphene sheet. [...]
2019 - 10.1103/PhysRevB.99.195408
Physical review B, Vol. 99, issue 19 (May 2019) , art. 195408  
10.
15 p, 5.7 MB Superparamagnetism-induced mesoscopic electron focusing in topological insulators / Sessi, P. (Universität Würzburg) ; Rüßmann, P. (Peter Grünberg Institut) ; Bathon, T. (Universität Würzburg) ; Barla, A. (Consiglio Nazionale Delle Ricerche) ; Kokh, K.A. (Novosibirsk State University) ; Tereshchenko, O.E. (Russian Academy of Sciences) ; Fauth, K. (Universität Würzburg) ; Mahatha, S.K. (Consiglio Nazionale Delle Ricerche) ; Valbuena, Miguel Ángel (Institut Català de Nanociència i Nanotecnologia) ; Godey, Sylvie (Institut Català de Nanociència i Nanotecnologia) ; Glott, F. (Physikalisches Institut. Experimentelle Physik II. Universität Würzburg) ; Mugarza, Aitor (Institut Català de Nanociència i Nanotecnologia) ; Gargiani, Pierluigi (ALBA Laboratori de Llum de Sincrotró) ; Valvidares, Manuel (ALBA Laboratori de Llum de Sincrotró) ; Long, N.H. (Peter Grünberg Institut) ; Carbone, C. (Consiglio Nazionale Delle Ricerche) ; Mavropoulos, P. (Peter Grünberg Institut) ; Blügel, S. (Peter Grünberg Institut) ; Bode, M. (Universität Würzburg)
Recently it has been shown that surface magnetic doping of topological insulators induces backscattering of Dirac states which are usually protected by time-reversal symmetry [Sessi, Nat. Commun. 5, 5349 (2014)10. [...]
2016 - 10.1103/PhysRevB.94.075137
Physical review B, Vol. 94, Issue 7 (August 2016) , art. 75137  

Dipòsit Digital de Documents de la UAB : 36 registres trobats   1 - 10següentfinal  anar al registre:
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