Electrical properties of BaTiO3, CoFe2O4 and La1/2(Ca, Sr)1/2MnO3 thin films and their importance for active barriers in tunnel transport - Search Results

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Electrical properties of BaTiO3, CoFe2O4 and La1/2(Ca, Sr)1/2MnO3 thin films and their importance for active barriers in tunnel transport / Gutiérrez Yatacue, Diego Fernando ; Fontcuberta, Josep, dir. ; Rodríguez-Viejo, Javier (Universitat Autònoma de Barcelona. Departament de Física) ; Universitat Autònoma de Barcelona. Departament de Física
La miniaturización ha sido el concepto relevante de la tecnología basada en silicio. No obstante, el escalamiento de su elemento pilar (el transistor de efecto de campo por apilamiento de metal/óxido/semiconductor) pronto llevará a la capa óxido de silicio a un espesor de 2 nm, donde la eficiencia de los dispositivos es afectada por el incremento de las corrientes de fuga debida al efecto túnel. [...]
Shrinking has been the relevant concept of silicon-based technology. However the scaling of its cornerstone (metal oxide semiconductor field effect transistor) will lead to the silicon oxide layer to the scale of 2 nm, where the efficiency of the devices is affected due to the increase of leakage current by tunnel effect. [...]
[Barcelona] : Universitat Autònoma de Barcelona, 2015

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