Growth and optical characterization of strain-engineered semiconductor nanostructures / - Search Results

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Growth and optical characterization of strain-engineered semiconductor nanostructures / Bernardi, Alessandro ; Alonso Carmona, Maria Isabel, dir. ; Goñi, Alejandro, dir. ; Pascual i Gainza, Jordi, tut. ; Universitat Autònoma de Barcelona. Departament de Física
En este trabajo hemos investigado distintas posibilidades para aprovechar las tensiones almacenadas en los materiales nanoestructurados para obtener estructuras 3D auto-organizadas. En particular hemos estudiado el crecimiento epitaxial de puntos cuánticos auto-organizados de Ge sobre Si depositando una submonocapa de carbono antes del crecimiento de las islas de Ge. [...]
In this work we explored different pathways to exploit the strain stored into nanoscale layers of materials as a driving force to self-assemble 3D structures. In particular, we have studied the epitaxial growth of self-assembled Ge quantum dots when a submonolayer of carbon is deposited prior to the growth of the dots. [...]
[Barcelona] : Universitat Autònoma de Barcelona, 2016

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