Nondestructive multlple breakdown events in very thin SI02 films - Search Results

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Nondestructive multlple breakdown events in very thin SI02 films / Suñé, Jordi, 1963- (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Farrés i Berenguer, Esteve (Universitat Autònoma de Barcelona. Departament de Física) ; Placencia Millan, Iolanda (Universitat Autònoma de Barcelona. Departament de Física) ; Barniol i Beumala, Núria (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Martín, Ferran, (Martín Antolín) (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ; Aymerich Humet, Xavier (Universitat Autònoma de Barcelona. Departament de Física) ; American Physical Society
Several breakdown events and multilevel current fluctuations have been observed when ultrathin SiO2 films are subjected to constant-voltage stresses. These breakdown events are sometimes reversible, and consist in a local change of conduction mechanism. [...]
1989 - DOI (Digital Object Identifier)

10.1063/1.102396
Applied physics letters, Vol. 55, Issue 2 (July 1989) , p. 128-130

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