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8 p, 3.0 MB |
Unveiling the multiradical character of the biphenylene network and its anisotropic charge transport
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Alcón, Isaac (Institut Català de Nanociència i Nanotecnologia) ;
Calogero, Gaetano (CNR Institute for Microelectronics and Microsystems) ;
Papior, Nick (Technical University of Denmark) ;
Antidormi, Aleandro (Institut Català de Nanociència i Nanotecnologia) ;
Song, Kenan (King Abdullah University of Science and Technology) ;
Cummings, Aron (Institut Català de Nanociència i Nanotecnologia) ;
Brandbyge, Mads (Center for Nanostructured Graphene) ;
Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
Recent progress in the on-surface synthesis and characterization of nanomaterials is facilitating the realization of new carbon allotropes, such as nanoporous graphenes, graphynes, and 2D π-conjugated polymers. [...]
2022 - 10.1021/jacs.2c02178
Journal of the American Chemical Society, Vol. 144, Issue 18 (April 2022) , p. 8278-8285
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13 p, 3.8 MB |
Observation of giant and tunable thermal diffusivity of a Dirac fluid at room temperature
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Block, Alexander (Institut Català de Nanociència i Nanotecnologia) ;
Principi, Alessandro (University of Manchester. School of Physics and Astronomy) ;
Hesp, Niels C. H. (Institut de Ciències Fotòniques) ;
Cummings, Aron (Institut Català de Nanociència i Nanotecnologia) ;
Liebel, Matz (Institut de Ciències Fotòniques) ;
Watanabe, Kenji (National Institute for Materials Science. Research Center for Functional Materials (Tsukuba, Japó)) ;
Taniguchi, Takashi (National Institute for Materials Science. International Center for Materials Nanoarchitectonics (Tsukuba, Japó)) ;
Roche, Stephan (Institut Català de Nanociència i Nanotecnologia) ;
Koppens, Frank (Institució Catalana de Recerca i Estudis Avançats) ;
van Hulst, Niek F.. (Institut de Ciències Fotòniques) ;
Tielrooij, Klaas-Jan (Institut Català de Nanociència i Nanotecnologia)
Conducting materials typically exhibit either diffusive or ballistic charge transport. When electron-electron interactions dominate, a hydrodynamic regime with viscous charge flow emerges -. More stringent conditions eventually yield a quantum-critical Dirac-fluid regime, where electronic heat can flow more efficiently than charge -. [...]
2021 - 10.1038/s41565-021-00957-6
Nature Nanotechnology, Vol. 16 (Nov. 2021) , p. 1195-1200
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69 p, 4.2 MB |
Linear scaling quantum transport methodologies
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Fan, Zheyong (Bohai University. School of Mathematics and Physics) ;
Garcia, José H. (Institut Català de Nanociència i Nanotecnologia) ;
Cummings, Aron (Institut Català de Nanociència i Nanotecnologia) ;
Barrios Vargas, José Eduardo (Universidad Nacional Autónoma de México. Departamento de Física y Química Teórica) ;
Panhans, Michel (Technische Universität Dresden. Center for Advancing Electronics) ;
Harju, Ari (Varian Medical Systems Finland) ;
Ortmann, Frank (Institut Català de Nanociència i Nanotecnologia) ;
Roche, Stephan (Institut Català de Nanociència i Nanotecnologia)
In recent years, predictive computational modeling has become a cornerstone for the study of fundamental electronic, optical, and thermal properties in complex forms of condensed matter, including Dirac and topological materials. [...]
2021 - 10.1016/j.physrep.2020.12.001
Physics Reports, Vol. 903 (April 2021) , p. 1-69
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201 p, 31.4 MB |
Theoretical Study of Spin Dynamics in Two-Dimensional Quantum Materials
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Vila Tusell, Marc ;
Roche, Stephan Jean Louis, dir. ;
Cummings, Aron, dir. ;
Valenzuela, Sergio O, dir. ;
Navau Ros, Carles, dir.
El camp de l'espintrònica té l'objectiu d'utilitzar el grau de llibertat d'espín de l'electró per emmagatzemar, transportar i manipular informació en dispositius electrònics de nova generació. [...] El campo de la espintrónica tiene como objetivo utilizar el grado de libertad de espín para almacenar, transportar y manipular información en dispositivos electrónicos de próxima generación. En esta tesis, utilizo metodologías de transporte cuántico para simular la dinámica de espín en dispositivos hechos de materiales bidimensionales. [...] The field of spintronics aims at using the spin degree of freedom to store, transport and manipulate information in next-generation electronic devices. In this thesis, I use quantum transport methodologies to simulate spin dynamics in devices made of two-dimensional materials. [...]
2020
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18 p, 7.5 MB |
Graphene on two-dimensional hexagonal BN, AlN, and GaN : electronic, spin-orbit, and spin relaxation properties
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Zollner, Klaus (University of Regensburg. Institute for Theoretical Physics) ;
Cummings, Aron (Institut Català de Nanociència i Nanotecnologia) ;
Roche, Stephan (Institut Català de Nanociència i Nanotecnologia) ;
Fabian, Jaroslav (University of Regensburg. Institute for Theoretical Physics)
We investigate the electronic band structure of graphene on a series of two-dimensional hexagonal nitride insulators hXN, X=B, Al, and Ga, with first-principles calculations. A symmetry-based model Hamiltonian is employed to extract orbital parameters and spin-orbit coupling (SOC) from the low-energy Dirac bands of the proximitized graphene. [...]
2021 - 10.1103/PhysRevB.103.075129
Physical review B, Vol. 103, issue 7 (Feb. 2021) , art. 75129
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6 p, 979.5 KB |
Anomalous dissipation mechanism and Hall quantization limit in polycrystalline graphene grown by chemical vapor deposition
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Lafont, F. (Laboratoire National de Métrologie et d'Essais) ;
Ribeiro-Palau, Rebeca (Laboratoire National de Métrologie et d'Essais) ;
Han, Z. (Institut polytechnique de Grenoble. Institut Néel) ;
Cresti, Alessandro (Institut polytechnique de Grenoble. Institute of Microelectronics, Electromagnetism and Photonics) ;
Delvallée, Alexandra (Laboratoire National de Métrologie et d'Essais) ;
Cummings, Aron (Institut Català de Nanociència i Nanotecnologia) ;
Roche, Stephan (Institut Català de Nanociència i Nanotecnologia) ;
Bouchiat, Vincent (Institut polytechnique de Grenoble. Institut Néel) ;
Ducourtieux, Sebastien (Laboratoire National de Métrologie et d'Essais) ;
Schopfer, F. (Laboratoire National de Métrologie et d'Essais) ;
Poirier, W. (Laboratoire National de Métrologie et d'Essais)
We report on the observation of strong backscattering of charge carriers in the quantum Hall regime of polycrystalline graphene, grown by chemical vapor deposition, which alters the accuracy of the Hall resistance quantization. [...]
2014 - 10.1103/PhysRevB.90.115422
Physical review B : Condensed matter and materials physics, Vol. 90, issue 11 (Sep. 2014) , art. 115422
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