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13 p, 1.1 MB |
Cord Blood Cardiovascular Biomarkers in Left-Sided Congenital Heart Disease
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Soveral, Iris (Hospital Clínic i Provincial de Barcelona) ;
Guirado, Laura (Hospital Clínic i Provincial de Barcelona) ;
Escobar-Diaz, Maria C. (Sant Joan de Déu Hospital) ;
Alcaide, María José (Hospital Universitario La Paz (Madrid)) ;
Martínez, Josep Maria (Hospital Clínic i Provincial de Barcelona) ;
Rodríguez Sureda, Víctor (Hospital Clínic i Provincial de Barcelona) ;
Bijnens, Bart (Institut d'Investigacions Biomèdiques August Pi i Sunyer) ;
Antolin, Eugenia (Hospital Universitario La Paz (Madrid)) ;
Llurba, E (Hospital de la Santa Creu i Sant Pau (Barcelona, Catalunya)) ;
Bartha, José Luis (Hospital Universitario La Paz (Madrid)) ;
Gómez, Olga (Hospital Clínic i Provincial de Barcelona) ;
Crispi, Fatima (Hospital Clínic i Provincial de Barcelona) ;
Universitat Autònoma de Barcelona
Fetal echocardiography has limited prognostic ability in the evaluation of left-sided congenital heart defects (left heart defects). Cord blood cardiovascular biomarkers could improve the prognostic evaluation of left heart defects. [...]
2022 -  10.3390/jcm11237119
Journal of clinical medicine, Vol. 11 (november 2022)
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28.0 MB |
Computational schemes for defects energetics
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Akhtar, Arsalan ;
Ordejón Rontome, Pablo Jesús, dir. ;
Alonso Pruneda, J. Miguel (José Miguel), dir. ;
García, Gemma, dir.
Abordar l'energia dels defectes és útil per entendre'ls i identificar-los en els materials, un repte que no es pot aconseguir només amb tècniques experimentals. L'objectiu d'aquesta tesi és facilitar l'estudi computacional de les propietats dels defectes ab initio, en particular fent servir la Teoria del Funcional de la Densitat (Density Functional Theory, DFT). [...]
Abordar la energía de los defectos es útil para comprenderlos e identificarlos en los materiales, un desafío que no se puede lograr únicamente con técnicas experimentales. El objetivo de esta tesis es facilitar el estudio ab-initio de las propiedades de los defectos, en términos de la Teoría del Funcional de la Densidad (DFT). [...]
Addressing energetics of defects is helpful for understanding and identifying them in materials, a challenge that cannot be accomplished solely with experimental techniques. The objective of this thesis is to facilitate the computational study of defect properties ab initio, in particular from Density Functional Theory (DFT). [...]
2022
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247 p, 10.5 MB |
Point Defects Engineering in Oxides Thin Films for Energy and Information Technologies
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Tang, Yunqing ;
Tarancón Rubio, Albert, dir. ;
Morata García, Alex, dir. ;
Chiabrera, Francesco Maria, dir.
Les pel·lícules primes d'òxid de perovskita són candidats prometedors per a diferents aplicacions d'energia i informació (per exemple, cel·les de combustible d'òxid sòlid (SOFC), cel·les d'electròlisi d'òxid sòlid (SOEC) i transistors, etc. [...]
Las películas delgadas de óxido de perovskita son candidatos prometedores para diferentes aplicaciones de energía e información (por ejemplo, celdas de combustible de óxido sólido (SOFC), celdas de electrólisis de óxido sólido (SOEC) y transistores, etc. [...]
Perovskite oxide thin films are promising candidates for different energy and information applications (e. g. solid oxide fuel cells (SOFC), solid oxide electrolysis cells (SOEC) and transistors etc. [...]
2022
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9 p, 2.6 MB |
Magneto-ionics in single-layer transition metal nitrides
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de Rojas, Julius (Universitat Autònoma de Barcelona. Departament de Física) ;
Salguero, Joaquín (Consejo Superior de Investigaciones Científicas (Espanya).Instituto de Micro y Nanotecnología) ;
Ibrahim, Fatima (Université de Grenoble Alpes) ;
Chshiev, Mairbek (Université de Grenoble Alpes) ;
Quintana Puebla, Alberto (Georgetown University. Department of Physics) ;
Lopeandía Fernández, Aitor (Institut Català de Nanociència i Nanotecnologia) ;
Liedke, Maciej O. (Helmholtz-Zentrum Dresden−Rossendorf. Institute of Radiation Physics) ;
Butterling, Maik (Helmholtz-Zentrum Dresden−Rossendorf. Institute of Radiation Physics) ;
Hirschmann, Eric (Helmholtz-Zentrum Dresden−Rossendorf. Institute of Radiation Physics) ;
Wagner, Andreas (Helmholtz-Zentrum Dresden−Rossendorf. Institute of Radiation Physics) ;
Abad, Llibertat (Institut de Microelectrònica de Barcelona) ;
Costa-Krämer, José L. (Consejo Superior de Investigaciones Científicas (Espanya).Instituto de Micro y Nanotecnología) ;
Menéndez Dalmau, Enric (Universitat Autònoma de Barcelona. Departament de Física) ;
Sort Viñas, Jordi (Universitat Autònoma de Barcelona. Departament de Física)
Magneto-ionics allows for tunable control of magnetism by voltage-driven transport of ions, traditionally oxygen or lithium and, more recently, hydrogen, fluorine, or nitrogen. Here, magneto-ionic effects in single-layer iron nitride films are demonstrated, and their performance is evaluated at room temperature and compared with previously studied cobalt nitrides. [...]
2021 - 10.1021/acsami.1c06138
ACS applied materials & interfaces, Vol. 13, issue 26 (July 2021) , p. 30826-30834
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5 p, 521.8 KB |
Unified RTN and BTI statistical compact modeling from a defect-centric perspective
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Pedreira Rincon, Gerard (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Martin Martinez, Javier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Saraza-Canflanca, Pablo (Instituto de Microelectrónica de Sevilla) ;
Castro-Lopez, Rafael (Instituto de Microelectrónica de Sevilla) ;
Rodríguez Martínez, Rosana (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Roca, Elisenda (Instituto de Microelectrónica de Sevilla) ;
Fernandez, Francisco V. (Instituto de Microelectrónica de Sevilla) ;
Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
In nowadays deeply scaled CMOS technologies, time-dependent variability effects have become important concerns for analog and digital circuit design. Transistor parameter shifts caused by Bias Temperature Instability and Random Telegraph Noise phenomena can lead to deviations of the circuit performance or even to its fatal failure. [...]
2021 - 10.1016/j.sse.2021.108112
Solid-state electronics, Vol. 185 (November 2021) , p. 108112
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5 p, 735.0 KB |
Statistical threshold voltage shifts caused by BTI and HCI at nominal and accelerated conditions
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Diaz-Fortuny, Javier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Saraza-Canflanca, Pablo (Instituto de Microelectrónica de Sevilla) ;
Rodríguez Martínez, Rosana (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Martin Martinez, Javier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Castro-Lopez, Rafael (Instituto de Microelectrónica de Sevilla) ;
Roca, Elisenda (Instituto de Microelectrónica de Sevilla) ;
Fernandez, Francisco V. (Instituto de Microelectrónica de Sevilla) ;
Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
In nowadays deeply scaled CMOS technologies, time-zero and time-dependent variability effects have become important concerns for analog and digital circuit design. For instance, transistor parameter shifts caused by Bias Temperature Instability and Hot-Carrier Injection phenomena can lead to progressive deviations of the circuit performance or even to its catastrophic failure. [...]
2021 - 10.1016/j.sse.2021.108037
Solid-state electronics, Vol. 185 (November 2021) , art. 108037
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8 p, 4.1 MB |
A smart noise- and RTN-removal method for parameter extraction of CMOS aging compact models
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Diaz-Fortuny, Javier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Martin Martinez, Javier (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Rodríguez Martínez, Rosana (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica) ;
Castro-Lopez, Rafael (Instituto de Microelectrónica de Sevilla) ;
Roca, Elisenda (Instituto de Microelectrónica de Sevilla) ;
Fernandez, Francisco V. (Instituto de Microelectrónica de Sevilla) ;
Nafría i Maqueda, Montserrat (Universitat Autònoma de Barcelona. Departament d'Enginyeria Electrònica)
In modern nanometer-scale CMOS technologies, time-zero and time-dependent variability (TDV) effects, the latter coming from aging mechanisms like Bias Temperature Instability (BTI), Hot Carrier Injection (HCI) or Random Telegraph Noise (RTN), have re-emerged as a serious threat affecting the performance of analog and digital integrated circuits. [...]
2019 - 10.1016/j.sse.2019.03.045
Solid-state electronics, Vol. 159 (Sep. 2019) , p. 99-105
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45 p, 3.4 MB |
Decoupling the effects of defects on efficiency and stability through phosphonates in stable halide perovskite solar cells
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Xie, Haibing (Institut Català de Nanociència i Nanotecnologia) ;
Wang, Zaiwei (École Polytechnique Fédérale de Lausanne. Institute of Chemical Sciences and Engineering) ;
Chen, Zehua (Eindhoven University of Technology. Department of Applied Physics.) ;
Pereyra, Carlos (Institut Català de Nanociència i Nanotecnologia) ;
Pols, Mike (Eindhoven University of Technology. Department of Applied Physics) ;
Gałkowski, Krzysztof (University of Cambridge. Cavendish Laboratory) ;
Anaya, Miguel (University of Cambridge. Cavendish Laboratory) ;
Fu, Shuai (Max-Planck Institute for polymer Research) ;
Jia, Xiaoyu (Max-Planck Institute for polymer Research) ;
Tang, PengYi (Institut Català de Nanociència i Nanotecnologia) ;
Kubicki, Dominik Józef (University of Cambridge. Cavendish Laboratory) ;
Agarwalla, Anand (École Polytechnique Fédérale de Lausanne. Institute of Chemical Sciences and Engineering) ;
Kim, Hui-Seon (École Polytechnique Fédérale de Lausanne. Institute of Chemical Sciences and Engineering) ;
Prochowicz, Daniel (École Polytechnique Fédérale de Lausanne. Institute of Chemical Sciences and Engineering) ;
Borrisé, Xavier (Institut de Microelectrònica de Barcelona) ;
Bonn, Mischa (Max-Planck Institute for polymer Research) ;
Bao, Chunxiong (Linköping University. Department of Physics, Chemistry and Biology) ;
Sun, Xiaoxiao (Empa-Swiss Federal Laboratories for Materials Science and Technology. Laboratory for Thin Films and Photovoltaics) ;
Zakeeruddin, Shaik Mohammed (École Polytechnique Fédérale de Lausanne. Institute of Chemical Sciences and Engineering) ;
Emsley, Lyndon (École Polytechnique Fédérale de Lausanne. Institute of Chemical Sciences and Engineering) ;
Arbiol i Cobos, Jordi (Institut Català de Nanociència i Nanotecnologia) ;
Gao, Feng (Linköping University. Department of Physics, Chemistry and Biology) ;
Fu, Fan (Empa-Swiss Federal Laboratories for Materials Science and Technology. Laboratory for Thin Films and Photovoltaics) ;
Wang, Hai I. (Max-Planck Institute for polymer Research) ;
Tielrooij, Klaas-Jan (Institut Català de Nanociència i Nanotecnologia) ;
Stranks, Samuel D. (University of Cambridge. Cavendish Laboratory) ;
Tao, Shuxia (Eindhoven University of Technology. Center for Computational Energy Research, Applied Physics) ;
Grätzel, Michael (École Polytechnique Fédérale de Lausanne. Institute of Chemical Sciences and Engineering) ;
Hagfeldt, Anders (École Polytechnique Fédérale de Lausanne. Institute of Chemical Sciences and Engineering) ;
Lira-Cantu, Monica (Institut Català de Nanociència i Nanotecnologia)
Understanding defects is of paramount importance for the development of stable halide perovskite solar cells (PSCs). However, isolating their distinctive effects on device efficiency and stability is currently a challenge. [...]
2021 - 10.1016/j.joule.2021.04.003
Joule, Vol. 5, Issue 5 (May 2021) , p. 1246-1266
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